Nexperia USA Inc. PSMN1R5-40YSDX

Overview

PSMN1R5-40YSD from Nexperia is an N-channel standard-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 1.5 mΩ R_DS(on) at 10 V V_GS and 25 A, and 240 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is qualified to 175 °C junction temperature - used in high-current synchronous rectification and server PSU output stages.

For engineers reviewing the PSMN1R5-40YSD datasheet, PSMN1R5-40YSD pinout, PSMN1R5-40YSD application, or PSMN1R5-40YSD equivalent, key selection criteria include its 0.56 K/W junction-to-mounting-base thermal resistance, 190 A avalanche rating, 3–20 nC Q_GD, Schottky-Plus diode V_SD ≤ 1 V at 25 A, and LFPAK56 wave-solderable exposed leads.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in a 175 °C-qualified LFPAK56 package. Its gate threshold voltage is 2.4–3.6 V at 25 °C, with -6.9 mV/K temperature coefficient, enabling stable turn-on across industrial temperature ranges.

The device integrates a Schottky-Plus body diode exhibiting 0.8–1 V forward voltage at 25 A and 37 nC reverse recovery charge, delivering soft recovery (t_a = 21 ns, t_b = 18 ns) and low EMI in hard-switched topologies. Dynamic parameters include 71 nC typical Q_G(tot), 10 nC typical Q_GD, and 233 pF typical C_rss at 20 V V_DS.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with exposed copper mounting base connected to drain, three parallel source leads, and single gate terminal. Its copper-clip construction and solder die attach deliver low parasitic inductance (<1.5 nH) and resistance, while exposed leads support visual solder-joint inspection and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IPP020N04L and SiR626DP, PSMN1R5-40YSD uniquely combines 1.5 mΩ conduction, Schottky-Plus soft recovery, 190 A avalanche testing, and 0.56 K/W thermal resistance in a wave-solderable surface-mount package - making it optimal for high-reliability, high-efficiency 200+ A power stages where thermal management and EMI control are critical.

Availability

PSMN1R5-40YSD is available at Aetrix Electronics and suitable for high-current synchronous rectification, server power supply output stages, and brushless DC motor control requiring stable component supply and long-lifecycle support.

Supply support for PSMN1R5-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, with leadership in discrete devices, logic ICs, and MOSFETs for power management and signal integrity.

This device belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-current power conversion in data center, industrial, and automotive-adjacent applications demanding ruggedness and thermal performance.

FAQ

What is the maximum continuous drain current for PSMN1R5-40YSD under real-world PCB conditions?

The datasheet specifies 240 A at T_mb = 25 °C, but practical current is constrained by PCB copper area, thermal vias, and ambient temperature. With a 25.4 mm × 25.4 mm 70 µm copper pad per Figure 5, sustained current drops to ~180 A at T_mb = 100 °C. Derating curves in Figure 2 must be applied based on actual mounting base temperature measurement.

Does PSMN1R5-40YSD require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No - its V_GS(th) is 2.4–3.6 V at 25 °C with -6.9 mV/K coefficient, and gate leakage is ≤100 nA at ±20 V. A 0 V gate drive fully turns off the device; however, -5 V is recommended in noisy motor-drive applications to prevent spurious turn-on due to capacitive coupling, leveraging its ±20 V V_GS rating.

How does the Schottky-Plus body diode differ from standard MOSFET body diodes in layout-sensitive applications?

It delivers 37 nC Q_r and 38 ns t_rr with soft recovery (t_a/t_b ratio ~1.2), reducing voltage overshoot and ringing during freewheeling. This allows relaxed gate-driver layout, smaller snubbers, and lower EMI filter requirements - especially beneficial in tightly spaced multi-phase VRMs where diode recovery noise couples into adjacent phases.

Can PSMN1R5-40YSD be used in parallel configurations, and what layout considerations apply?

Yes - its three parallel source pins and low common-source inductance (<0.3 nH per pin) support stable current sharing. Layout requires symmetrical gate routing with matched trace lengths, Kelvin-connected source returns to minimize imbalance, and individual gate resistors (≤5 Ω) to damp oscillation. Thermal coupling via shared mounting base further enhances matching.