Nexperia USA Inc. PSMN1R5-50YLHX
- Part No.:
- PSMN1R5-50YLHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1023, 4-LFPAK
- Datasheet:
-
PSMN1R5-50YLHX.pdf
- Description:
- PSMN1R5-50YLH/SOT1023/4 LEADS
- Quantity:
- Payment:

- Shipping:

Inventory:4,205
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Product details
Overview
PSMN1R5-50YLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56E (SOT1023) package, rated for 50 V VDS, 1.7 mΩ RDS(on) @ 10 V, 200 A continuous drain current, and qualified to 175 °C junction temperature. It delivers high-efficiency switching in battery isolation and DC motor control circuits, especially in 36 V nominal lithium-ion systems with demanding avalanche and linear-mode requirements.
For engineers reviewing the PSMN1R5-50YLHX datasheet, PSMN1R5-50YLHX pinout, PSMN1R5-50YLHX application, or PSMN1R5-50YLHX equivalent, key selection criteria include its SchottkyPlus body-diode performance, low QG/QGD for high-frequency operation, 100% avalanche-tested ruggedness, and narrow VGS(th) distribution enabling reliable paralleling in high-current load-switch designs.
Technical Context
This MOSFET employs Nexperia's SchottkyPlus technology-achieving soft, low-spiking body-diode recovery (trr = 36 ns, Qr = 37 nC) without elevated IDSS leakage (≤3.9 µA @ 125 °C). Its copper-clip die attach and exposed mounting base yield Rth(j-mb) = 0.33 K/W and support 333 W total power dissipation at Tmb = 25 °C.
The device is optimized for 36 V battery systems (e.g., 10-cell Li-ion), featuring strong SOA up to 200 A at VDS ≤ 8 V, 100% unclamped avalanche testing (EAS = 2 J @ 25 A), and gate threshold voltage tightly distributed between 1.2 V and 2.2 V for consistent turn-on behavior across temperature and parallel configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 50 V - Maximum drain-source blocking voltage compatible with 36 V nominal battery systems with headroom for transients. |
| RDS(on) | 1.4–1.75 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <100 mW conduction loss at 25 A, critical for high-efficiency BMS and motor drive stages. |
| ID (cont) | 200 A @ Tmb = 25 °C - Validated continuous current capability, limited in practice by PCB thermal design and mounting base temperature. |
| QG(tot) | 53–82 nC @ VGS = 4.5 V - Low gate charge supports efficient 100+ kHz switching in synchronous rectifiers and load switches. |
| EAS | 2 J @ ID = 25 A, Vsup ≤ 50 V - 100% tested non-repetitive avalanche energy ensures robustness against inductive switching faults. |
| trr | 36 ns - Fast, soft reverse recovery minimizes voltage overshoot and EMI in high-dV/dt applications like BLDC inverters. |
| Rth(j-mb) | 0.33 K/W - Ultra-low junction-to-mounting-base thermal resistance enables direct heatsink attachment and high-power density layout. |
Pinout & Package
LFPAK56E (SOT1023) is a low-stress, copper-clip-based surface-mount package with an exposed mounting base connected to drain, optimized for solder-joint inspection, thermal performance, and mechanical reliability under thermal cycling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with low RG (0.52–3.3 Ω) for stable, fast turn-on/turn-off control using standard logic-level drivers. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; serves as primary heat path and high-current return node. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft recovery (ta = 21 ns, tb = 14 ns) and low Qr = 37 nC enable low-EMI synchronous rectification without Schottky leakage penalty. |
| Narrow VGS(th) | 1.2–2.2 V range at 25 °C ensures uniform turn-on timing and predictable current sharing when paralleled in high-current load switches. |
| Strong linear-mode SOA | Rated for safe operation up to 200 A at VDS ≤ 8 V - supports robust battery protection during short-circuit or inrush events. |
| 100% avalanche tested | Each unit validated for unclamped inductive switching (IAS = 115 A, EAS = 2 J), eliminating need for external snubbers in motor control. |
| LFPAK56E construction | Copper-clip die attach and exposed drain pad deliver 0.33 K/W thermal resistance and <1 nH package inductance for high-frequency stability. |
Applications
| Brushless DC Motor Control | Synchronous Rectifier |
|---|---|
|
Use Scenario: High-power 36 V BLDC inverter half-bridge leg with 100+ kHz PWM and high di/dt. IC Role / Device Role / Timing Role: Low-side switching MOSFET handling 150–200 A peak currents, leveraging SchottkyPlus diode for freewheeling. Use Value: Soft trr = 36 ns and low QGD = 13–29 nC suppress voltage spikes and reduce EMI filter burden in compact motor drives. |
Use Scenario: Secondary-side synchronous rectification in 3 kW server AC-DC power supplies. IC Role / Device Role / Timing Role: High-current, low-RDS(on) rectifier replacing Schottky diodes in LLC resonant converters. Use Value: 1.4 mΩ RDS(on) cuts conduction loss by >40% vs. 3 mΩ alternatives, while low QOSS improves light-load efficiency. |
| Battery Protection (BMS) | High-Current Load Switch |
|
Use Scenario: Main disconnect switch in 10-cell Li-ion battery packs (36–42 V) with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Primary isolation FET placed between battery pack and system load, controlled by protection IC. Use Value: 200 A continuous rating and 1159 A pulsed capability handle surge currents; 100% avalanche test ensures fault survival. |
Use Scenario: Hot-swap or power sequencing switch in industrial PLC backplanes requiring 150+ A steady-state current. IC Role / Device Role / Timing Role: Single-pole, logic-level controlled main power rail switch with fast turn-on and low insertion loss. Use Value: Narrow VGS(th) and low QG allow clean, jitter-free switching with 3.3 V/5 V GPIO; exposed drain pad simplifies thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N04L | 40 V VDS, 2.6 mΩ RDS(on) @ 10 V, TO-220 package, no avalanche rating | Limited to ≤40 V systems; lacks 100% avalanche test and SchottkyPlus diode performance | Choose only if 40 V rating suffices and TO-220 thermal mounting is preferred over surface-mount LFPAK56E. |
| Vishay SiR626DP | 60 V VDS, 2.1 mΩ RDS(on) @ 10 V, PowerPAK 8×8, QG = 102 nC (higher switching loss) | Higher voltage margin but higher gate charge increases driver stress and reduces efficiency above 100 kHz | Select when 60 V headroom is mandatory and switching frequency remains below 50 kHz; avoid for high-frequency BMS or BLDC. |
Compared with IPP026N04L and SiR626DP, PSMN1R5-50YLHX uniquely combines 50 V rating, sub-2 mΩ on-resistance, ultra-low QG, and SchottkyPlus diode behavior in a surface-mount package-making it optimal for space-constrained, high-frequency, high-reliability 36 V battery and motor systems where avalanche robustness and EMI control are critical.
Availability
PSMN1R5-50YLHX is available at Aetrix Electronics and suitable for brushless DC motor control, battery management systems, synchronous rectification in server PSUs, and high-current load switching requiring stable component supply across production lifecycles.
Supply support for PSMN1R5-50YLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including MOSFETs, logic, and analog devices-with manufacturing rooted in process excellence and automotive-grade quality systems.
PSMN1R5-50YLHX belongs to Nexperia's ASFET family for Battery Isolation and DC Motor Control, engineered specifically for 36 V battery-powered applications demanding avalanche ruggedness, linear-mode stability, and high-frequency switching efficiency.
FAQ
What is the maximum continuous drain current for PSMN1R5-50YLHX, and what limits it in practice?
The datasheet specifies 200 A continuous drain current at Tmb = 25 °C, validated in application testing. In real designs, this current is limited by PCB copper area, thermal interface to heatsink, ambient temperature, and mounting base temperature-not by the silicon itself. Derating begins above Tmb = 25 °C per Fig. 2, reaching ~100 A at Tmb = 100 °C.
How does SchottkyPlus technology differ from a standard MOSFET body diode or integrated Schottky diode?
SchottkyPlus delivers Schottky-like soft reverse recovery (trr = 36 ns, Qr = 37 nC) and low spiking without the high reverse leakage (IDSS) typical of integrated Schottky diodes. At 125 °C, IDSS remains ≤3.9 µA-over 10× lower than comparable Schottky-integrated MOSFETs-enabling reliable operation in thermally demanding BMS and motor control environments.
Can PSMN1R5-50YLHX be paralleled with identical units, and what design considerations apply?
Yes-its narrow VGS(th) distribution (1.2–2.2 V) and low RDS(on) temperature coefficient ensure balanced current sharing. Use matched gate resistors (≤5 Ω), symmetrical PCB layout, and common-source routing. Avoid mixing batches unless VGS(th) screening is performed; thermal coupling via shared heatsink further improves balance.
Is PSMN1R5-50YLHX suitable for linear-mode (SOA) operation, and what are its safe operating limits?
Yes-it is explicitly characterized for linear-mode use with strong SOA up to 200 A at VDS ≤ 8 V (Fig. 3). Safe operation requires strict thermal management: junction temperature must stay ≤175 °C, and power dissipation must remain within the derated Ptot curve (Fig. 1). For 100 A at 5 V, Tmb must be ≤65 °C to maintain reliability.
PSMN1R5-50YLHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1023, 4-LFPAK
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.75mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 181 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11143 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN1R5-50YLHX FAQ
1.How can I place an order for PSMN1R5-50YLHX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R5-50YLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R5-50YLHX reliable?
The price and inventory of PSMN1R5-50YLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R5-50YLHX is usually 5 days.
3.What payment methods are accepted for PSMN1R5-50YLHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R5-50YLHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R5-50YLHX?
PSMN1R5-50YLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R5-50YLHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R5-50YLHX?
For technical support, including PSMN1R5-50YLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R5-50YLHX requirements.
6.How does Aetrix verify that PSMN1R5-50YLHX is sourced from the original manufacturer or authorized distributors?
All PSMN1R5-50YLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R5-50YLHX meets industry standards.
7.What is the process for return or replacement of PSMN1R5-50YLHX?
All PSMN1R5-50YLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R5-50YLHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R5-50YLHX part is unused and in its original packaging.
Return procedure for PSMN1R5-50YLHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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