Nexperia USA Inc. PSMN1R6-25YLEX

Overview

PSMN1R6-25YLE from Nexperia is an N-channel 25 V ASFET in LFPAK56 (SOT669) package, optimized for hot-swap, e-fuse, and linear-mode load switching with 1.68 mΩ R_DS(on) at V_GS = 10 V, 25 A, T_j = 25 °C, 175 °C junction rating, and enhanced SOA for inrush current handling in 12–20 V systems.

For engineers reviewing the PSMN1R6-25YLE datasheet, PSMN1R6-25YLE pinout, PSMN1R6-25YLE application, or PSMN1R6-25YLE equivalent, this device is selected for high-reliability DC load switching where low conduction loss, robust avalanche energy (389 mJ), and stable linear-mode operation under thermal stress are critical design requirements.

Technical Context

This MOSFET employs a trench-gate silicon process with copper-clip interconnect to minimize parasitic inductance and R_DS(on) temperature coefficient. Its SOA curve is specifically extended for DC and pulsed linear-mode operation up to 100 ms at 125 °C mounting base temperature.

The device integrates a low-leakage body diode (I_DSS ≤ 1 µA at 25 °C) with soft reverse recovery (S = 1.06) and is qualified to 175 °C junction temperature, supporting high-power density board layouts with minimal thermal derating in hot-swap controllers and e-fuse ICs.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount package with exposed copper mounting base connected to drain, offering 30 mm² footprint, low-inductance copper-clip construction, and 175 °C qualification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) load switch applications.

Compared with BSC014N04LS and SiR626DP, PSMN1R6-25YLE delivers superior linear-mode stability due to its extended SOA and 389 mJ avalanche ruggedness, making it uniquely suited for hot-swap and e-fuse applications where unclamped transients and sustained DC conduction are routine.

Availability

PSMN1R6-25YLE is available at Aetrix Electronics and suitable for hot-swap controllers, e-fuse modules, and high-current DC load switches requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for PSMN1R6-25YLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

This device belongs to Nexperia's ASFET (Advanced Superjunction FET) product line, engineered specifically for high-efficiency, high-reliability power switching in hot-swap, e-fuse, and linear-mode applications demanding both ultra-low R_DS(on) and robust safe operating area.

FAQ

What is the maximum continuous drain current for PSMN1R6-25YLE under real-world PCB conditions?

The datasheet specifies 185 A at T_mb = 25 °C, but practical current is constrained by PCB copper area, thermal interface quality, and ambient temperature. With a 25.4 mm² 70 µm copper pad on FR4, sustained current is typically limited to 120–140 A before exceeding 125 °C junction temperature. Derating curves in Figure 2 must be applied for accurate thermal design.

Does PSMN1R6-25YLE require a gate resistor for safe operation in hot-swap applications?

No external gate resistor is required for basic turn-on/turn-off, as the device's 2.8 Ω typical gate resistance and 16 nC total gate charge allow direct drive from standard 3.3 V or 5 V logic. However, a small series resistor (2–10 Ω) is recommended to damp ringing and control dV/dt during inrush limiting, especially when used with high-bandwidth current-sense amplifiers.

How does the LFPAK56 package improve thermal performance compared to standard SO-8?

The LFPAK56 uses a copper-clip die attach and exposed drain mounting base, achieving 0.63 K/W typical R_th(j-mb) - over 2× better than wire-bonded SO-8 packages (~1.4 K/W). This reduces junction-to-board temperature rise by >50%, enabling higher power density and eliminating the need for large thermal vias in many applications.

Can PSMN1R6-25YLE be used in bidirectional current paths, such as battery protection circuits?

Yes - its symmetric source-drain diode (V_SD = 0.8 V typ at 25 A, S = 1.06) and robust avalanche rating support bidirectional configurations. For true reverse-current blocking, two devices must be placed back-to-back (source-to-source), leveraging the integrated diode's soft recovery to minimize voltage overshoot during reverse turn-off.