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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R6-30BL,118

Name: PSMN1R6-30BL,118
Brand: Nexperia USA Inc.
SKU: PSMN1R6-30BL,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R6-30BL,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN1R6-30BL,118.pdf

Description:: MOSFET N-CH 30V 100A D2PAK

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Product details

Overview

PSMN1R6-30BL from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V V_DS, 1.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency load switching in server power supplies and motor control circuits.

For engineers reviewing the PSMN1R6-30BL datasheet, PSMN1R6-30BL pinout, PSMN1R6-30BL application, or PSMN1R6-30BL equivalent, this device is selected for high-current, logic-driven switching where low conduction loss, avalanche ruggedness (1.7 J), and thermal robustness (R_th(j-mb) = 0.22 K/W typ.) are critical.

Technical Context

This MOSFET employs planar silicon technology optimized for low R_DS(on) and fast switching with gate threshold voltage (V_GS(th)) of 1.3–2.15 V at 25 °C and stable down to 0.5 V at 175 °C - enabling reliable turn-on with 3.3 V/5 V logic drivers. Its unclamped avalanche rating (1.7 J) and 1268 A peak drain current support robust operation under transient overloads.

The D2PAK package features an exposed mounting base electrically connected to the drain, delivering low thermal resistance (0.22 K/W typical from junction to mounting base) and supporting high-power dissipation (306 W at T_mb = 25 °C). Dynamic parameters - including Q_G(tot) = 101 nC at V_GS = 4.5 V and C_iss = 12.5 pF - are tuned for efficient gate drive in hard-switched DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V systems and 30 V bus applications.
R_DS(on)	1.58 mΩ (typ.) at V_GS = 10 V, T_j = 25 °C - Enables <1.6 W conduction loss at 32 A, critical for high-efficiency server VRMs.
I_D (cont)	100 A at T_mb = 25 °C - Package-limited current capacity; requires heatsinking for sustained >60 A operation.
E_AS	1.7 J (unclamped avalanche) - Supports single-pulse energy absorption during inductive turn-off without failure.
Q_G(tot)	101 nC at V_GS = 4.5 V - Determines gate driver current requirement (~2 A avg. for 50 ns rise time).
R_th(j-mb)	0.22 K/W (typ.) - Enables direct thermal coupling to heatsink; allows ~139 °C/W junction-to-ambient rise with 10 cm² 1 mm Cu pad.
V_GS(th)	1.7 V (typ.) at 25 °C - Ensures full enhancement with standard 3.3 V microcontroller GPIOs without level-shifting.

Pinout & Package

D2PAK (SOT404) package with exposed metal mounting base (electrically connected to drain) and three terminals: Gate (pin 1), Source (pin 3), and Drain (pin 2 + mounting base). Pin 2 is not externally accessible; drain connection is made solely via the mounting base.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts logic-level drive (3.3 V/5 V); low input capacitance (C_iss = 12.5 pF) minimizes driver loss.
Pin 3 (S)	Source	Reference node for gate drive; connects to power ground or low-side switch return path.
Mounting Base (mb)	Drain	Primary high-current drain path; thermally and electrically ties to PCB copper pour for heat extraction and low-inductance layout.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) ≤ 2.15 V ensures full enhancement with 3.3 V controllers - eliminates need for gate driver ICs in many embedded designs.
Low R_DS(on) at high temperature	2.21 mΩ (typ.) at T_j = 100 °C - maintains <2.5 W conduction loss at 50 A, supporting compact thermal design in sealed enclosures.
High avalanche energy rating	1.7 J unclamped E_AS - enables reliable operation in inductive load switching (e.g., motor phases) without external snubbers.
Thermally optimized D2PAK package	R_th(j-mb) = 0.22 K/W (typ.) - reduces junction temperature rise by >40 % vs. TO-220 under identical power dissipation and heatsink conditions.

Applications

Server Power Supply

Industrial Motor Control

Use Scenario: High-current synchronous rectification in 12 V input, 0.8–1.2 V output VRMs for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter; operates at 300–600 kHz with precise duty-cycle control.

Use Value: 1.58 mΩ R_DS(on) at 25 °C cuts conduction loss by 35 % vs. comparable 2.5 mΩ MOSFETs, improving full-load efficiency by 0.8–1.2 %.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: High-current switching element handling bidirectional PWM at 20 kHz; subjected to inductive flyback during commutation.

Use Value: 1.7 J avalanche energy rating absorbs flyback transients without clamping diodes, reducing BOM count and board area by 12 %.

Telecom DC-DC Converter

High-Power Load Switch

Use Scenario: Primary-side switch in isolated 48 V to 12 V intermediate bus converter for 5G base station power architecture.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or active-clamp forward topology; stressed with 100 A peak currents and 30 V V_DS spikes.

Use Value: 1268 A peak drain current rating and 306 W P_tot allow 2× derating margin for 60 A continuous operation with forced-air cooling.

Use Scenario: Hot-swap and inrush current limiting in 30 V industrial PLC backplane power distribution.

IC Role / Device Role / Timing Role: Single-ended load switch controlling 80 A nominal rail; activated/deactivated under load with controlled slew rate.

Use Value: 175 °C T_j rating and 0.22 K/W R_th(j-mb) enable stable 80 A operation at 70 °C ambient without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	Higher R_DS(on) (4.0 mΩ @ 10 V), TO-220 package, lower T_j rating (175 °C same but R_th(j-c) = 0.75 K/W)	Limited to ≤40 A continuous in same footprint; unsuitable for 100 A server VRMs without parallel devices	Select only when cost sensitivity outweighs efficiency and thermal density requirements.
STL220N3LLH6	Same 30 V rating, 1.7 mΩ R_DS(on), but in PowerFLAT 5x6 package (no exposed drain base); lower I_D (80 A)	Surface-mount only; lacks mounting base for direct heatsinking; requires multilayer PCB thermal vias for equivalent cooling	Prefer for space-constrained, low-profile designs where mechanical mounting is impractical.

Compared with IRF1404PBF and STL220N3LLH6, PSMN1R6-30BL uniquely combines 100 A current capability, 1.58 mΩ on-resistance, and D2PAK's low-R_th(j-mb) for applications demanding both high power density and field-replaceable heatsink integration.

Availability

PSMN1R6-30BL is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC-DC converters, and high-power load switching requiring stable component supply across multi-year production cycles.

Supply support for PSMN1R6-30BL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to Nexperia's Logic Level Power MOSFET product line, engineered specifically for high-current, low-voltage switching in data center, industrial automation, and communications infrastructure where thermal resilience and gate-drive simplicity are essential.

FAQ

What is the maximum continuous drain current for PSMN1R6-30BL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 65 A, based on Figure 1 in the datasheet. This reflects package thermal limits - not silicon capability - and assumes proper PCB copper area and airflow per Nexperia's SOT404 layout guidelines.

Can PSMN1R6-30BL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes. With V_GS(th) = 1.3–2.15 V (typ. 1.7 V) and low Q_G(tot) = 101 nC at 4.5 V, it achieves full enhancement at 3.3 V. However, switching speed will be reduced - expect ~200 ns rise/fall times with 100 Ω series gate resistor - acceptable for <100 kHz applications.

Is the mounting base electrically isolated from the drain terminal?

No. The mounting base is internally connected to the drain (pin 2), as confirmed in Table 2 ("mb: mounting base; connected to drain") and Figure 18. This requires isolation of the heatsink from system ground when used in high-side configurations or floating topologies.

What is the recommended minimum PCB copper area for thermal performance in a single-layer design?

Nexperia specifies "minimum footprint" for R_th(j-a) = 50 K/W, but for reliable 100 A operation, a 10 cm² (≥30 mm × 35 mm) 2 oz copper pour connected to the mounting base via ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch) is required to maintain T_j < 125 °C at 70 °C ambient.

PSMN1R6-30BL,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 212 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12493 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN1R6-30BL,118 FAQ

1.How can I place an order for PSMN1R6-30BL,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R6-30BL,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R6-30BL,118 reliable?

The price and inventory of PSMN1R6-30BL,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R6-30BL,118 is usually 5 days.

3.What payment methods are accepted for PSMN1R6-30BL,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R6-30BL,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R6-30BL,118?

PSMN1R6-30BL,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R6-30BL,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R6-30BL,118?

For technical support, including PSMN1R6-30BL,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R6-30BL,118 requirements.

6.How does Aetrix verify that PSMN1R6-30BL,118 is sourced from the original manufacturer or authorized distributors?

All PSMN1R6-30BL,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R6-30BL,118 meets industry standards.

7.What is the process for return or replacement of PSMN1R6-30BL,118?

All PSMN1R6-30BL,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R6-30BL,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R6-30BL,118 part is unused and in its original packaging.

Return procedure for PSMN1R6-30BL,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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