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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R6-40YLC:115

Name: PSMN1R6-40YLC:115
Brand: Nexperia USA Inc.
SKU: PSMN1R6-40YLC:115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R6-40YLC:115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMN1R6-40YLC:115.pdf

Description:: MOSFET N-CH 40V 100A LFPAK56

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Product details

Overview

PSMN1R6-40YLC from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK (SOT1023) package, rated for 40 V V_DS, 1.55 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, with 100 A continuous drain current at T_mb = 25 °C and ultra-low Q_G (59 nC at 4.5 V). It serves as a high-efficiency power switch in synchronous rectification and DC-DC converter primary/secondary side switching.

For engineers reviewing the PSMN1R6-40YLC datasheet, PSMN1R6-40YLC pinout, PSMN1R6-40YLC application, or PSMN1R6-40YLC equivalent, key selection criteria include gate drive compatibility at 4.5 V, thermal resistance to mounting base (0.35 K/W typ), avalanche ruggedness (391 mJ), low parasitic inductance, and LFPAK package suitability for high-current PCB layouts.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction technology to achieve ultra-low R_DS(on) and optimized dynamic charge parameters-Q_GD = 15.3 nC and Q_OSS = 38.7 nC at V_GS = 4.5 V-enabling high-frequency switching with minimal conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges from 1.05 V to 1.95 V at 25 °C, ensuring reliable turn-on with standard logic-level drivers.

The device features an integrated source-drain diode with V_SD = 0.77 V at I_S = 25 A and T_j = 25 °C, and supports unclamped inductive switching with E_AS = 391 mJ at I_D = 100 A. Thermal design is enabled by direct die-to-mounting-base conduction path, yielding R_th(j-mb) = 0.35 K/W typical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/36 V input systems and 48 V intermediate bus applications.
R_DS(on)	1.55 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 60 A, critical for high-current server VRMs.
I_D (cont)	100 A @ T_mb = 25 °C - Sustained current capability limited by LFPAK thermal interface, not silicon.
Q_G(tot)	59 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables efficient 500 kHz–1 MHz operation.
R_th(j-mb)	0.35 K/W typ - Enables direct heatsinking to copper planes or external heatsinks without thermal vias.
E_AS	391 mJ - Robust unclamped avalanche rating supports reliable operation in hard-switched topologies.
C_iss	7790 pF - High input capacitance mitigates EMI but requires careful gate driver sizing for fast transitions.

Pinout & Package

LFPAK (SOT1023) is a 4-lead plastic single-ended surface-mounted package with exposed mounting base connected to drain. Its low-profile, high-copper-content construction delivers superior thermal and current-handling performance versus standard SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three parallel source terminals minimize source inductance and improve current sharing in high-di/dt applications.
4 (G)	Gate	Single gate terminal with RG = 1.17 Ω typ - enables stable switching with moderate gate resistance (4.7 Ω typical).
Mounting Base (mb)	Drain	Exposed copper pad electrically and thermally connected to drain - provides primary heat path and high-current return path.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V - compatible with 3.3 V and 5 V microcontrollers and PWM controllers without level-shifting.
NextPower Superjunction architecture	Reduces R_DS(on) × Q_G figure-of-merit by >30% vs. planar MOSFETs - improves efficiency across light-to-heavy load conditions.
Ultra-low Q_GD/Q_OSS	Q_GD = 15.3 nC, Q_OSS = 38.7 nC - minimizes Miller-induced switching delay and output energy loss during hard switching.
High-reliability Power-SO8 qualification	Qualified to 150 °C junction temperature - supports extended lifetime in industrial and telecom power supplies.
Low parasitic inductance	Optimized internal layout and triple-source leads - reduces voltage overshoot and ringing in synchronous buck converters.

Applications

Server Power Supply VRM

Synchronous Rectifier

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator racks with >600 A per phase.

IC Role / Device Role / Timing Role: Primary-side high-side switch in multiphase buck converter operating at 600 kHz with 4.5 V gate drive.

Use Value: 1.55 mΩ R_DS(on) and 0.35 K/W R_th(j-mb) enable <95% efficiency at 50 A per phase while maintaining T_j < 110 °C.

Use Scenario: Secondary-side rectification in isolated LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Low-V_F synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: V_SD = 0.77 V and fast trr = 44 ns reduce conduction and reverse recovery losses by >40% vs. 40 V Schottky diodes.

DC-DC Converter for Industrial PLC

Power OR-ing Circuit

Use Scenario: 24 V input to 5 V/3.3 V point-of-load regulation in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: High-side switch in compact 1 MHz buck converter with tight thermal constraints on multilayer PCB.

Use Value: Triple-source configuration and low L_source suppress voltage spikes during 100 A/µs di/dt transients, improving system reliability.

Use Scenario: Redundant 12 V power rail combining from dual hot-swap controllers in network switches.

IC Role / Device Role / Timing Role: Low-R_DS(on) OR-ing FET placed between supply and load, controlled by ideal diode controller.

Use Value: 1.55 mΩ R_DS(on) limits forward drop to <150 mV at 100 A, reducing power loss and thermal stress vs. discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	R_DS(on) = 2.6 mΩ @ 4.5 V; Q_G = 42 nC; TO-252 package	Higher R_DS(on) increases conduction loss; larger package raises thermal resistance (R_th(j-a) ≈ 45 K/W)	Prefer when cost sensitivity outweighs efficiency and board space constraints.
Vishay SiR872DP	R_DS(on) = 1.45 mΩ @ 10 V; Q_G = 62 nC; PowerPAK SO-8	Similar R_DS(on) but higher Q_G; no specified avalanche rating	Consider where gate drive strength is ample and avalanche robustness is non-critical.

Compared with IPP026N04L and SiR872DP, PSMN1R6-40YLC offers the lowest R_DS(on) × Q_G product (91 fJ), best thermal path via mounting base, and verified 391 mJ avalanche capability-making it optimal for high-efficiency, high-reliability, space-constrained power stages.

Availability

PSMN1R6-40YLC is available at Aetrix Electronics and suitable for server power supplies, synchronous rectifiers, and industrial DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN1R6-40YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability devices for automotive, industrial, and consumer applications.

This part belongs to Nexperia's NextPower logic-level MOSFET product line, engineered for high-efficiency, high-current switching in compact power supplies where low R_DS(on), fast switching, and robust thermal performance are critical.

FAQ

What is the maximum continuous drain current for PSMN1R6-40YLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current remains 100 A per Figure 1 of the datasheet. This reflects the package-limited rating - the LFPAK construction maintains current capacity up to 100 °C mounting temperature before derating begins, unlike conventional SO-8 packages that derate significantly above 70 °C.

Does PSMN1R6-40YLC have an integrated body diode, and what are its key characteristics?

Yes, it includes a source-drain diode with V_SD = 0.77 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 44 ns, and recovered charge Q_r = 62 nC. These values confirm suitability for synchronous rectification where low forward voltage and fast recovery minimize losses compared to discrete Schottky diodes.

Can PSMN1R6-40YLC be used with 3.3 V gate drive in high-current applications?

No - while V_GS(th) starts at ~1.05 V, R_DS(on) rises sharply below 4.5 V. At V_GS = 3.3 V, R_DS(on) exceeds 4 mΩ (per Fig. 7), doubling conduction loss. The device is optimized for 4.5 V minimum gate drive; use only with 3.3 V logic if paired with gate boosting or level-shifting circuitry.

How does the LFPAK package improve thermal performance over standard SO-8?

The LFPAK (SOT1023) exposes the drain-connected mounting base directly to the PCB, achieving R_th(j-mb) = 0.35 K/W - over 5× better than SO-8's typical R_th(j-a) of 2.5 K/W. This allows >80% of heat to exit through the copper plane, enabling higher sustained current without heatsinks in space-constrained designs.

PSMN1R6-40YLC:115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.55mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 126 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7790 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 288W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56; Power-SO8

PSMN1R6-40YLC:115 FAQ

1.How can I place an order for PSMN1R6-40YLC:115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R6-40YLC:115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R6-40YLC:115 reliable?

The price and inventory of PSMN1R6-40YLC:115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R6-40YLC:115 is usually 5 days.

3.What payment methods are accepted for PSMN1R6-40YLC:115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R6-40YLC:115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R6-40YLC:115?

PSMN1R6-40YLC:115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R6-40YLC:115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R6-40YLC:115?

For technical support, including PSMN1R6-40YLC:115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R6-40YLC:115 requirements.

6.How does Aetrix verify that PSMN1R6-40YLC:115 is sourced from the original manufacturer or authorized distributors?

All PSMN1R6-40YLC:115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R6-40YLC:115 meets industry standards.

7.What is the process for return or replacement of PSMN1R6-40YLC:115?

All PSMN1R6-40YLC:115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R6-40YLC:115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R6-40YLC:115 part is unused and in its original packaging.

Return procedure for PSMN1R6-40YLC:115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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