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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R7-25YLDX

Name: PSMN1R7-25YLDX
Brand: Nexperia USA Inc.
SKU: PSMN1R7-25YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R7-25YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R7-25YLDX.pdf

Description:: MOSFET N-CH 25V 100A LFPAK56

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R7-25YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 25 V V_DS, 1.75 mΩ R_DS(on) at V_GS = 10 V and 25 A, 200 A continuous drain current capability at T_mb = 25 °C, and optimized for high-frequency synchronous rectification in server DC/DC converters.

For engineers reviewing the PSMN1R7-25YLD datasheet, PSMN1R7-25YLD pinout, PSMN1R7-25YLD application, or PSMN1R7-25YLD equivalent, this device is selected for low-spiking, high-efficiency POL and VRM designs requiring Schottky-like diode performance without elevated leakage - especially where 4.5 V gate drive, < 1 µA I_DSS at 25 °C, and 0.95 K/W R_th(j-mb) are critical.

Technical Context

This MOSFET implements Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology, delivering soft-recovery diode behavior (S = 0.9), ultra-low Q_G (24.6 nC) and Q_GD (5.1 nC), and minimized parasitic inductance via clip-bonded die attach and exposed mounting base. It operates reliably up to 175 °C junction temperature with no wire bonds or adhesive.

The device is characterized for 4.5 V logic-level gate drive, exhibits 2.03 mΩ R_DS(on) at V_GS = 4.5 V and T_j = 25 °C, and supports high-current pulsed operation (I_DM = 860 A, t_p ≤ 10 µs) while maintaining avalanche ruggedness (E_AS = 746 mJ, I_AS = 142 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in telecom/server POL stages
R_DS(on) @ V_GS = 10 V	1.75 mΩ - Enables < 0.5 W conduction loss at 200 A, critical for high-current secondary-side rectification
R_DS(on) @ V_GS = 4.5 V	2.42 mΩ - Confirmed low on-resistance under standard logic-level drive, reducing gate driver complexity
Q_G(tot)	24.6 nC - Low total gate charge minimizes switching losses and enables > 1 MHz operation in VRMs
R_th(j-mb)	0.95 K/W - Direct thermal path to PCB mounting base enables high-power dissipation without heatsinks
I_D (continuous)	200 A @ T_mb = 25 °C - Validated current rating for robust board-level current handling in high-density DC/DC
V_SD	0.81 V @ I_S = 25 A - Low forward voltage of integrated body diode reduces reverse-recovery losses in hard-switched topologies

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, solder-attached Power-SO8 variant with exposed mounting base connected to drain, enabling superior thermal and electrical performance over traditional SO8. No wire bonds or die attach glue are used; qualified to 175 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate terminal with low RG (0.9 Ω) ensures fast, controlled turn-on/turn-off and reduced ringing
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; serves as primary heat sink and high-current return path

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft recovery (S = 0.9), 0.81 V V_SD, and < 1 µA I_DSS at 25 °C - eliminates need for external Schottky while avoiding leakage trade-offs
Ultra-low gate charge	Q_G = 24.6 nC, Q_GD = 5.1 nC - enables high-frequency PWM control with minimal driver power and EMI
100% avalanche tested	I_AS = 142 A, E_AS = 746 mJ - guarantees ruggedness against inductive switching transients in motor and POL circuits
Wave-solderable footprint	Exposed leads and defined solder land pattern (Fig. 19) allow optical solder-joint inspection and reliable through-hole reflow compatibility
High-temperature reliability	Qualified to 175 °C T_j; clip-bonded construction eliminates wire bond fatigue and adhesive degradation

Applications

Server On-Board DC/DC

Telecom Secondary-Side SR

Use Scenario: High-current, high-density point-of-load conversion in 1U rack servers delivering 5–12 V to CPUs/GPUs.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 1.75 mΩ R_DS(on) and 0.95 K/W R_th(j-mb) enable > 95% efficiency at 200 A while maintaining < 85 °C case temperature on standard 2 oz FR4.

Use Scenario: Isolated DC/DC modules in 48 V telecom systems powering baseband processors and RF front ends.

IC Role / Device Role / Timing Role: Low-loss secondary-side switch replacing Schottky diodes in forward or LLC resonant converters.

Use Value: "SchottkyPlus" soft-recovery (31.1 ns t_rr) and 0.81 V V_SD cut reverse-recovery losses by > 40% versus standard MOSFETs, reducing output ripple and EMI filter size.

VRM for ASIC/FPGA

Brushless Motor Control

Use Scenario: Voltage regulator modules supplying dynamic core voltage (V_core) to high-performance ASICs with rapid load transients.

IC Role / Device Role / Timing Role: High-side or low-side switch in multi-phase buck regulators with 4.5 V gate drive from integrated controllers.

Use Value: Optimized 4.5 V drive compatibility and 2.03 mΩ R_DS(on) at that voltage ensure stable regulation during 100 A/µs load steps without gate drive headroom compromise.

Use Scenario: Inverter half-bridge stage in industrial BLDC drives for pumps, fans, and compressors (24–48 V bus).

IC Role / Device Role / Timing Role: Low-side switching element handling continuous 100+ A phase current with fast commutation.

Use Value: 860 A peak pulsed current rating and 142 A avalanche current support safe operation during short-circuit events and regenerative braking spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRFH7107TRPBF	25 V, 1.8 mΩ @ 10 V, Q_G = 27.5 nC, PQFN 5×6 mm package	Higher Q_G increases switching loss above 500 kHz; lacks SchottkyPlus diode softness (S ≈ 0.6)	Preferred where PQFN footprint compatibility matters more than diode recovery or ultra-high frequency operation
Vishay SiR626DP-T1-GE3	25 V, 1.6 mΩ @ 10 V, Q_G = 32.5 nC, PowerPAK SO-8 package	Higher gate charge and 125 °C max T_j limit high-temp reliability; no avalanche rating published	Consider only for lower-frequency (< 300 kHz), lower-ambient applications where absolute lowest R_DS(on) dominates

Compared with IRFH7107TRPBF and SiR626DP-T1-GE3, PSMN1R7-25YLD delivers superior high-frequency efficiency via lower Q_G and Q_GD, higher thermal robustness (175 °C vs. 150–125 °C), and verified avalanche ruggedness - making it optimal for demanding server, telecom, and motor-control POL designs.

Availability

PSMN1R7-25YLD is available at Aetrix Electronics and suitable for server DC/DC solutions, telecom secondary-side synchronous rectification, and VRM/ASIC power delivery requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for PSMN1R7-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components, with leadership in logic, discrete, and MOSFET technologies for high-volume industrial and computing applications.

PSMN1R7-25YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure where low spiking, soft recovery, and logic-level drive are mandatory.

FAQ

What is the maximum continuous drain current for PSMN1R7-25YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 152 A per Figure 2 of the datasheet. This reflects thermal limits of the LFPAK56 package under real board-level conditions, not silicon capability - actual current depends on PCB copper area, airflow, and adjacent component heating.

Does PSMN1R7-25YLD require a gate resistor for stability in high-speed switching?

Yes - a 2–5 Ω external gate resistor is recommended to dampen ringing caused by low parasitic inductance and fast edge rates (t_r = 25.4 ns, t_f = 14.3 ns). The internal gate resistance is 0.9 Ω; adding series resistance controls dV/dt and prevents shoot-through in half-bridge configurations.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practical use?

The "SchottkyPlus" diode achieves soft reverse recovery (S = 0.9) and low V_SD (0.81 V) without increasing leakage - I_DSS remains < 1 µA at 25 °C. This reduces EMI, eliminates snubbers in many designs, and improves light-load efficiency compared to conventional MOSFETs with hard-recovery diodes.

Can PSMN1R7-25YLD be used in automotive applications?

No - PSMN1R7-25YLD is not AEC-Q101 qualified and is explicitly designated for industrial/computing use per Nexperia's legal disclaimers. Its 175 °C rating applies to industrial thermal stress, not automotive qualification requirements such as PPAP, zero-defect screening, or extended temperature cycling.

PSMN1R7-25YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3415 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 135W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R7-25YLDX FAQ

1.How can I place an order for PSMN1R7-25YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R7-25YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R7-25YLDX reliable?

The price and inventory of PSMN1R7-25YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R7-25YLDX is usually 5 days.

3.What payment methods are accepted for PSMN1R7-25YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R7-25YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R7-25YLDX?

PSMN1R7-25YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R7-25YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R7-25YLDX?

For technical support, including PSMN1R7-25YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R7-25YLDX requirements.

6.How does Aetrix verify that PSMN1R7-25YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN1R7-25YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R7-25YLDX meets industry standards.

7.What is the process for return or replacement of PSMN1R7-25YLDX?

All PSMN1R7-25YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R7-25YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R7-25YLDX part is unused and in its original packaging.

Return procedure for PSMN1R7-25YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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