Nexperia USA Inc. PSMN1R7-30YL,115

Overview

PSMN1R7-30YL from Nexperia is a logic-level N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V V_DS, 1.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency switching in DC-DC converters and server power supplies.

For engineers reviewing the PSMN1R7-30YL datasheet, PSMN1R7-30YL pinout, PSMN1R7-30YL application, or PSMN1R7-30YL equivalent, this device is selected for high-current load switching where low conduction loss, robust avalanche energy (241 mJ), and thermal reliability under sustained mounting base temperatures up to 100 °C are critical design requirements.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve ultra-low R_DS(on) and gate charge (Q_G(tot) = 36.2 nC at V_GS = 4.5 V), enabling fast switching with reduced drive losses. Its LFPAK package integrates a thermally optimized mounting base directly connected to the drain, delivering R_th(j-mb) = 0.5 K/W typical for efficient heat transfer to PCB copper.

The device features a logic-level gate threshold (V_GS(th) = 1.3–2.15 V at T_j = 25 °C) compatible with 3.3 V and 5 V controllers, and includes an integrated source-drain diode with V_SD = 0.78 V at I_S = 25 A and T_j = 25 °C, supporting synchronous rectification and bidirectional current handling.

Key Specifications

Pinout & Package

PSMN1R7-30YL uses the SOT669 (LFPAK; Power-SO8) package: a 4-lead surface-mount plastic package with exposed mounting base (drain-connected) for enhanced thermal and mechanical performance. Dimensions: 5.0 × 3.3 mm footprint, 1.3 mm height, with 0.65 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRL3803PbF and DMTH3007LPS-13, PSMN1R7-30YL offers superior thermal efficiency (0.5 K/W vs ≥0.9 K/W), higher avalanche ruggedness (241 mJ vs ≤150 mJ), and tighter R_DS(on) tolerance (1.7 mΩ vs 2.0–3.0 mΩ), making it optimal for high-power density, high-reliability industrial switching.

Availability

PSMN1R7-30YL is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, and industrial motor control systems requiring stable component supply across long production lifecycles.

Supply support for PSMN1R7-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and computing markets.

This device belongs to Nexperia's LFPAK logic-level MOSFET product line, engineered specifically for high-current, high-efficiency power switching in space-constrained and thermally demanding applications.

FAQ

What is the maximum continuous drain current for PSMN1R7-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 40 A, based on Figure 1 of the datasheet. This reflects thermal limitation of the LFPAK package rather than electrical degradation, and assumes adequate PCB copper area for heat spreading.

Does PSMN1R7-30YL have an integrated body diode, and what are its key characteristics?

Yes - it includes a source-drain diode with forward voltage V_SD = 0.78 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 45 ns, and recovered charge Q_r = 56 nC. These values support efficient freewheeling in synchronous rectifier and half-bridge configurations.

Can PSMN1R7-30YL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes - with V_GS(th) = 1.3–2.15 V and guaranteed enhancement at V_GS = 4.5 V, it achieves usable R_DS(on) (~2.1 mΩ) at 3.3 V drive. However, full 1.7 mΩ performance requires ≥4.5 V; for high-current or high-frequency use, a dedicated driver is recommended.

What is the significance of the mounting base being connected to the drain in the LFPAK package?

The mounting base serves dual roles: it provides the primary thermal path from junction to PCB (R_th(j-mb) = 0.5 K/W) and forms the drain terminal. This eliminates bond wire thermal bottlenecks and enables low-inductance, high-current drain connections - critical for minimizing switching losses and EMI in high-power designs.