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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R7-40YLBX

Name: PSMN1R7-40YLBX
Brand: Nexperia USA Inc.
SKU: PSMN1R7-40YLBX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R7-40YLBX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R7-40YLBX.pdf

Description:: PSMN1R7-40YLB/SOT669/LFPAK

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Product details

Overview

PSMN1R7-40YLBX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 1.8 mΩ R_DS(on) @ 10 V, 200 A continuous drain current, and 175 °C junction temperature. It employs NextPowerS3 Schottky-Plus technology for soft-recovery body diode operation and is optimized for high-efficiency DC-DC converters and motor control.

For engineers reviewing the PSMN1R7-40YLBX datasheet, PSMN1R7-40YLBX pinout, PSMN1R7-40YLBX application, or PSMN1R7-40YLBX equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche ruggedness (180 A I_AS), SOA robustness in linear mode, thermal resistance (0.69 K/W j-mb), and LFPAK56 wave-solderable mounting base.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with Schottky-Plus body diode integration, delivering low Q_rr (26 nC), soft reverse recovery (t_rr = 33 ns), and reduced EMI via up to 6 dB improved EMC performance. Its gate threshold voltage (1.35–2.05 V) and plateau voltage (~2.7 V) support reliable 4.5 V logic-level drive.

The device features copper-clip die attach and solder die bonding in an exposed-mounting-base LFPAK56 package, enabling low parasitic inductance and resistance, high board-level reliability, and direct thermal path from junction to PCB via the drain-connected mounting base.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 36 V nominal bus systems with margin.
R_DS(on) @ V_GS = 10 V	1.5–1.8 mΩ - Enables <1 W conduction loss at 200 A, critical for high-current power stages.
R_DS(on) @ V_GS = 4.5 V	1.9–2.3 mΩ - Confirmed logic-level operation compatible with standard microcontroller GPIOs.
I_D continuous	200 A @ T_mb = 25 °C - Demonstrated capability; practical limit set by PCB copper area and thermal design.
Q_G(tot)	22–49 nC @ 4.5 V - Low gate charge enables fast switching with moderate gate driver strength (e.g., 1–2 A peak).
Q_rr	26 nC - Minimizes commutation losses and voltage overshoot in hard-switched topologies.
R_th(j-mb)	0.69–0.77 K/W - Direct thermal path to mounting base supports >150 W dissipation with minimal ΔT.

Pinout & Package

LFPAK56 (SOT669) is a single-ended surface-mount plastic package with copper-clip construction, qualified to 175 °C. It features an exposed mounting base electrically connected to drain, enabling high-current routing and efficient heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching.
4	Gate (G)	Single gate input with low RG (0.4–2.3 Ω); optimized for stable 4.5 V drive without oscillation.
Mounting Base (mb)	Drain (D)	Exposed copper pad tied to drain; serves as primary current path and thermal interface-must be soldered to large PCB copper pour.

Key Features

Feature	Design Value
Schottky-Plus body diode	V_SD = 0.8–1.0 V @ 25 A; t_rr = 33 ns; Q_r = 26 nC - Enables synchronous rectification replacement and reduces boost/flyback recovery losses.
Avalanche rating	100% tested I_AS = 180 A - Guarantees ruggedness against inductive load transients without external snubbers.
SOA robustness	Linear-mode capable up to 100 V × 10 A @ 10 ms - Supports active current limiting and hot-swap eFuse applications.
EMC optimization	Up to 6 dB lower radiated emissions vs. prior generation - Reduces need for ferrite beads and shielding in compact power modules.
Wave-solderable leads	All four terminals and mounting base support wave soldering - Enables high-yield, automated assembly without reflow profile constraints.

Applications

Brushless DC Motor Control

High-Current DC-DC Converters

Use Scenario: Three-phase inverter stage in 24–48 V robotic joint actuators with 100+ A peak phase current.

IC Role / Device Role / Timing Role: High-side/low-side power switch; operates in PWM mode at 20–100 kHz with precise dead-time control.

Use Value: Low R_DS(on) and Q_G minimize conduction and switching losses; Schottky-Plus diode eliminates need for external freewheeling diodes.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated buck converter for server power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET; driven with adaptive timing to minimize shoot-through and reverse recovery loss.

Use Value: 26 nC Q_r and soft recovery reduce voltage spikes across transformer leakage inductance, improving efficiency and EMI.

Battery Isolation & eFuse

Inrush Management / Hot-Swap

Use Scenario: Bidirectional battery protection circuit in 48 V energy storage systems with overcurrent and short-circuit response < 100 µs.

IC Role / Device Role / Timing Role: Load switch with integrated current sensing; configured in linear mode during fault ramp-down.

Use Value: Strong SOA rating allows controlled power dissipation during 200 A fault events; 175 °C rating ensures reliability under sustained overload.

Use Scenario: Hot-swap controller front-end in telecom shelf power entry module handling 100 A inrush into bulk capacitance.

IC Role / Device Role / Timing Role: Controlled turn-on switch with gate slew-rate limiting; used with external current monitor and comparator.

Use Value: Low gate charge and predictable V_GS(th) enable accurate, repeatable soft-start timing; mounting base simplifies Kelvin sense layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	R_DS(on) = 2.6 mΩ @ 4.5 V; TO-252 package; no Schottky-Plus diode; Q_r = 42 nC	Higher conduction loss at 4.5 V; requires larger heatsink; less suitable for high-frequency synchronous rectification	Prefer when cost sensitivity outweighs efficiency and EMI targets; avoid where soft recovery is required.
Vishay SiR626DP	R_DS(on) = 1.7 mΩ @ 10 V; PowerPAK SO-8; Q_r = 31 nC; T_j(max) = 150 °C	Lower thermal rating limits sustained 200 A operation; higher Q_r increases switching loss in hard-switched converters	Acceptable for 100–150 A applications with conservative thermal design; not recommended for 175 °C ambient environments.

Compared with IPP026N04L and SiR626DP, PSMN1R7-40YLBX delivers superior 4.5 V drive capability, lower Q_r, 175 °C rating, and integrated Schottky-Plus diode-making it optimal for space-constrained, high-efficiency, high-reliability industrial power stages where thermal headroom and EMI are critical.

Availability

PSMN1R7-40YLBX is available at Aetrix Electronics and suitable for brushless DC motor control, high-current DC-DC converters, and battery isolation applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN1R7-40YLBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to the NextPowerS3 Schottky-Plus series, engineered specifically for high-efficiency, low-EMI power conversion in robotics, industrial automation, and energy infrastructure-emphasizing ruggedness, thermal performance, and logic-level drivability.

FAQ

What is the maximum continuous drain current for PSMN1R7-40YLBX under real-world PCB conditions?

The datasheet specifies 200 A continuous current at T_mb = 25 °C with sufficient PCB copper area (e.g., 25.4 mm² 70 µm Cu). In practice, sustained current is limited by thermal design: at T_mb = 100 °C, derated ID drops to 167 A. For 200 A operation, a minimum 400 mm² 2 oz Cu thermal pad with internal layers is recommended to maintain T_j ≤ 150 °C.

Does PSMN1R7-40YLBX support gate drive voltages below 4.5 V?

Yes-V_GS(th) ranges from 1.35 V to 2.05 V, enabling turn-on at ≥3 V. However, R_DS(on) rises significantly below 4.5 V: at V_GS = 3 V and T_j = 25 °C, R_DS(on) ≈ 4.5 mΩ (vs. 1.9 mΩ at 4.5 V), increasing conduction loss by >2×. Use only in low-duty-cycle or pulsed applications if driving below 4.5 V.

How is the mounting base (drain) electrically isolated from the PCB during assembly?

The mounting base is electrically connected to the drain terminal and must be soldered directly to a PCB copper pour designated as the system drain node. No isolation is required or intended-it is a functional part of the current path. The package uses non-conductive molding compound around the leads; isolation is achieved solely by PCB layout (e.g., clearance to adjacent planes) and conformal coating if needed for environmental protection.

Is PSMN1R7-40YLBX qualified for automotive applications?

No-this part is not AEC-Q101 qualified and is explicitly designated for industrial, computing, and consumer applications. Nexperia's automotive-grade equivalents (e.g., PSMN1R7-40YLH) undergo extended temperature cycling, humidity testing, and failure analysis per AEC standards. Using PSMN1R7-40YLBX in automotive systems voids warranty and violates safety-critical design requirements.

PSMN1R7-40YLBX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 111 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8138 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 194W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R7-40YLBX FAQ

1.How can I place an order for PSMN1R7-40YLBX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R7-40YLBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R7-40YLBX reliable?

The price and inventory of PSMN1R7-40YLBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R7-40YLBX is usually 5 days.

3.What payment methods are accepted for PSMN1R7-40YLBX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R7-40YLBX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R7-40YLBX?

PSMN1R7-40YLBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R7-40YLBX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R7-40YLBX?

For technical support, including PSMN1R7-40YLBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R7-40YLBX requirements.

6.How does Aetrix verify that PSMN1R7-40YLBX is sourced from the original manufacturer or authorized distributors?

All PSMN1R7-40YLBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R7-40YLBX meets industry standards.

7.What is the process for return or replacement of PSMN1R7-40YLBX?

All PSMN1R7-40YLBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R7-40YLBX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R7-40YLBX part is unused and in its original packaging.

Return procedure for PSMN1R7-40YLBX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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