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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R7-40YLDX

Name: PSMN1R7-40YLDX
Brand: Nexperia USA Inc.
SKU: PSMN1R7-40YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R7-40YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R7-40YLDX.pdf

Description:: MOSFET N-CH 40V 200A LFPAK56

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Product details

Overview

PSMN1R7-40YLD from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 1.8 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 200 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is qualified to 175 °C junction temperature. Used in high-efficiency server power supplies and synchronous rectification stages.

For engineers reviewing the PSMN1R7-40YLD datasheet, PSMN1R7-40YLD pinout, PSMN1R7-40YLD application, or PSMN1R7-40YLD equivalent, key selection criteria include its 4.5 V gate drive optimization, 0.69 K/W junction-to-mounting-base thermal resistance, avalanche ruggedness (100% tested I_AS = 180 A), and low Q_GD (7.7 nC typ) for EMI-sensitive switching designs.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in an LFPAK56 package, enabling low parasitic inductance and high thermal reliability. Its Schottky-Plus body diode delivers V_SD = 0.8 V @ I_S = 25 A and t_rr = 33 ns with soft recovery - critical for minimizing voltage spikes in synchronous buck converters.

The device is characterized for linear-mode SOA operation and supports robust unclamped avalanche energy handling (E_DS(AL) = 905 mJ). Gate charge parameters - Q_G(tot) = 35 nC @ V_GS = 4.5 V and Q_GD = 7.7 nC - are optimized for fast, low-loss switching at 100–500 kHz frequencies in DC-DC and motor control topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe blocking capability in 12 V/24 V/48 V bus systems with margin against transients.
R_DS(on)	1.8 mΩ @ V_GS = 10 V, T_j = 25 °C - enables <1.2 W conduction loss at 200 A, critical for high-current power stages.
I_D (cont)	200 A @ T_mb = 25 °C - validated continuous current rating, limited in practice by PCB thermal design and mounting base temperature.
Q_G(tot)	35 nC @ V_GS = 4.5 V - determines gate driver strength requirement and switching transition time in logic-level gate-drive systems.
R_th(j-mb)	0.69 K/W - enables direct thermal coupling to heatsink or copper plane, supporting >150 W dissipation with modest ΔT.
t_rr	33 ns - short reverse recovery time reduces diode commutation losses and EMI in hard-switched synchronous rectifiers.
I_AS	180 A - 100% production-tested avalanche current ensures robustness during inductive load switching or fault events.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with exposed copper mounting base connected to drain, copper-clip interconnect, and solder die attach. It supports wave soldering, visual solder-joint inspection, and achieves low parasitic inductance (<1.5 nH) and resistance via optimized leadframe geometry.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with low RG (1 Ω typ) - compatible with standard logic-level drivers without external gate resistors in many cases.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current drain connection.

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft recovery (t_a/t_b = 18/15 ns), low V_SD = 0.8 V, and Q_r = 27 nC - reduces voltage overshoot and ringing in synchronous rectification.
Optimized for 4.5 V gate drive	R_DS(on) = 1.9 mΩ @ V_GS = 4.5 V - enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting.
Strong linear-mode SOA	Rated for 100 ms pulse at V_DS = 20 V / I_D = 100 A - supports reliable operation in inrush limiting and eFuse applications.
175 °C qualified LFPAK56 package	Copper-clip construction and solder die attach ensure long-term reliability under thermal cycling and high-power stress.
Avalanche energy rating	E_DS(AL) = 905 mJ @ T_j(init) = 25 °C - provides margin against inductive energy dump during short-circuit or hot-swap events.

Applications

High-Performance Synchronous Rectification

Server DC-DC Converters

Use Scenario: Secondary-side switch in 48 V → 12 V or 12 V → 1 V point-of-load converters.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) synchronous rectifier replacing Schottky diodes to improve efficiency above 95%.

Use Value: 1.8 mΩ R_DS(on) and soft-recovery body diode reduce conduction and commutation losses, directly increasing power density and reducing cooling requirements.

Use Scenario: Primary or secondary switch in high-current VRMs for AI accelerators and CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with tight duty-cycle control and fast transient response.

Use Value: Low Q_G/Q_GD and 0.69 K/W R_th(j-mb) enable stable operation at >150 A with minimal gate drive loss and thermal derating.

Brushless DC Motor Control

Battery Protection & eFuse

Use Scenario: Low-side switch in 24 V/48 V BLDC inverter half-bridges for industrial fans and pumps.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged N-channel MOSFET handling repetitive inductive turn-off stress.

Use Value: 180 A I_AS rating and strong SOA allow safe operation during motor stall or phase reversal without external snubbers.

Use Scenario: Solid-state load switch in battery management systems for overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) eFuse with integrated thermal shutdown and fast fault response.

Use Value: 200 A continuous rating and 175 °C qualification support high-reliability, maintenance-free protection in 48 V telecom and EV auxiliary systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	R_DS(on) = 2.6 mΩ @ V_GS = 4.5 V; TO-220 package; no Schottky-Plus diode.	Larger footprint, higher thermal resistance (R_th(j-c) ≈ 1.2 K/W), less suitable for ultra-dense board layouts.	Preferred where through-hole mounting or legacy TO-220 compliance is required; lower cost but reduced efficiency at high current.
Vishay SiR626DP	R_DS(on) = 1.7 mΩ @ V_GS = 10 V; PowerPAK 8×8; Q_G = 42 nC @ 4.5 V; no avalanche rating published.	Higher gate charge increases driver loss; lacks 100% tested I_AS specification for safety-critical fault handling.	Valid for space-constrained designs needing lowest R_DS(on), but requires additional fault protection circuitry in avalanche-prone applications.

Compared with PSMN1R7-40YLD, IPP026N04L trades efficiency for mechanical robustness and cost, while SiR626DP offers marginally lower on-resistance but lacks guaranteed avalanche ruggedness and has higher switching losses - making PSMN1R7-40YLD optimal for high-reliability, high-frequency, high-current logic-driven power stages.

Availability

PSMN1R7-40YLD is available at Aetrix Electronics and suitable for high-performance synchronous rectification, server DC-DC converters, and brushless DC motor control requiring stable component supply across extended production lifecycles.

Supply support for PSMN1R7-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, high-reliability discrete and logic devices for power management, signal integrity, and interface applications.

PSMN1R7-40YLD belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and automotive-qualified (AEC-Q101 option available) applications demanding low R_DS(on), fast switching, and rugged fault tolerance.

FAQ

What is the maximum continuous drain current for PSMN1R7-40YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 167 A per Figure 2 of the datasheet. This reflects thermal limitations of the LFPAK56 package under real-world PCB thermal conditions - not a device failure limit, but the practical maximum for sustained operation with adequate heatsinking.

Does PSMN1R7-40YLD support wave soldering, and what are the recommended footprint dimensions?

Yes, the LFPAK56 package is explicitly qualified for wave soldering. The official footprint (Figure 19) specifies 4.826 mm × 1.78 mm solder lands with 1.27 mm pitch and 0.635 mm solder mask opening - enabling full wetting of all four terminals and visual inspection of solder joints per IPC-A-610 Class 2/3 standards.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode in practical operation?

The Schottky-Plus diode exhibits soft reverse recovery (t_a/t_b = 18/15 ns), low V_SD = 0.8 V, and Q_r = 27 nC - resulting in significantly reduced voltage overshoot, lower EMI generation, and negligible tail current during commutation compared to conventional body diodes, especially in synchronous rectifier configurations.

Is PSMN1R7-40YLD automotive-qualified, and what is its maximum junction temperature rating?

No - this specific variant (PSMN1R7-40YLD) is not AEC-Q101 qualified per the datasheet legal disclaimer. However, it is fully rated for 175 °C junction temperature operation, with thermal characteristics (R_th(j-mb) = 0.69 K/W) and packaging (copper-clip, solder die attach) designed to sustain that rating under continuous high-power stress.

PSMN1R7-40YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 109 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7966 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 194W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R7-40YLDX FAQ

1.How can I place an order for PSMN1R7-40YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R7-40YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R7-40YLDX reliable?

The price and inventory of PSMN1R7-40YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R7-40YLDX is usually 5 days.

3.What payment methods are accepted for PSMN1R7-40YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R7-40YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R7-40YLDX?

PSMN1R7-40YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R7-40YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R7-40YLDX?

For technical support, including PSMN1R7-40YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R7-40YLDX requirements.

6.How does Aetrix verify that PSMN1R7-40YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN1R7-40YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R7-40YLDX meets industry standards.

7.What is the process for return or replacement of PSMN1R7-40YLDX?

All PSMN1R7-40YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R7-40YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R7-40YLDX part is unused and in its original packaging.

Return procedure for PSMN1R7-40YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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