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Nexperia USA Inc. PSMN1R7-60BS,118

Name: PSMN1R7-60BS,118
Brand: Nexperia USA Inc.
SKU: PSMN1R7-60BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R7-60BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN1R7-60BS,118.pdf

Description:: MOSFET N-CH 60V 120A D2PAK

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Product details

Overview

PSMN1R7-60BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 60 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It operates up to 175 °C junction temperature and is used in high-current load switching and server power supply primary-side synchronous rectification.

For engineers reviewing the PSMN1R7-60BS datasheet, PSMN1R7-60BS pinout, PSMN1R7-60BS application, or PSMN1R7-60BS equivalent, key selection criteria include its low R_DS(on) at elevated temperature, unclamped avalanche energy rating of 913 mJ, gate charge profile optimized for standard 10 V drive, and thermal resistance from junction to mounting base of 0.22 K/W.

Technical Context

This MOSFET employs a planar trench-gated silicon process optimized for low conduction loss and robust avalanche performance. Its gate threshold voltage ranges from 1 V (T_j = 175 °C) to 4.6 V (T_j = −55 °C), enabling reliable turn-on with standard logic-level gate drivers while maintaining noise immunity.

The device features an integrated source-drain diode with 0.8–1.2 V forward voltage at 25 A and 57 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its C_iss = 9997 pF and Q_GD = 32 nC support efficient high-frequency switching up to several hundred kHz in DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in primary-side switch applications without derating below 60 V rail.
R_DS(on)	1.66 mΩ (typ) at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.7 W conduction loss at 100 A in thermally optimized layouts.
I_D (cont)	120 A at T_mb = 25 °C - Supported by D2PAK's low R_th(j-mb) = 0.22 K/W, requiring direct copper pour on PCB for heatsinking.
Q_G(tot)	137 nC - Matches standard gate drivers (e.g., UCC27531) without external buffering for ≤300 kHz operation.
E_AS	913 mJ (unclamped) - Withstands single-pulse inductive energy spikes in motor control and relay driving without failure.
T_j max	175 °C - Qualified for industrial environments where ambient exceeds 85 °C and thermal margin is constrained.
V_GS(th)	2–4 V (typ) at T_j = 25 °C - Ensures clean turn-on with 5 V or 10 V gate drive while avoiding spurious conduction near 0 V.

Pinout & Package

PSMN1R7-60BS uses the D2PAK (SOT404) surface-mount package with three terminals: Gate (pin 1), Source (pin 3), and Drain (pin 2). The mounting base (mb) is electrically connected to the drain and serves as the primary thermal path; no electrical connection is made to pin 2 itself per datasheet note [1].

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 10 V standard-level drive; 0.9 Ω internal gate resistance limits dV/dt-induced ringing.
2 (D)	Drain	High-side switching node; internally tied to mounting base-requires isolation from heatsink unless drain-referenced cooling is intended.
3 (S)	Source	Power return path and reference for gate drive; low-inductance layout critical due to 1076 A peak current capability.
mb	Mounting Base	Thermal interface to PCB copper; contributes 0.22 K/W to junction-to-ambient path when soldered to ≥10 cm² 2-oz copper.

Key Features

Feature	Design Value
Low R_DS(on) at high T_j	3.82 mΩ (max) at 175 °C enables stable conduction loss in enclosed server PSU enclosures.
Standard-level gate drive compatibility	Operates fully enhanced with 10 V gate drive-no level-shifting needed for microcontroller or PWM controller outputs.
High avalanche ruggedness	913 mJ E_AS supports reliable operation in inductive load switching without snubbers in motor control.
Optimized dynamic characteristics	Q_GD/Q_G ratio of 0.23 ensures clean Miller plateau transition and reduced switching loss in hard-switched converters.
Integrated body diode	57 ns t_rr and 80 nC Q_r allow use in synchronous rectifier configurations with minimal reverse recovery loss.

Applications

Server Power Supply

Industrial DC-DC Converter

Use Scenario: Primary-side high-current synchronous rectifier in 48 V input, 12 V output telecom/server PSU modules.

IC Role / Device Role / Timing Role: Main power switch handling up to 120 A continuous current with low R_DS(on) to minimize conduction loss at full load.

Use Value: 1.66 mΩ R_DS(on) reduces conduction loss to <2.0 W at 100 A, improving system efficiency by >0.8% versus 3 mΩ alternatives.

Use Scenario: High-efficiency isolated DC-DC converter for programmable logic controller (PLC) backplane power.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 200–300 kHz with fast body diode recovery.

Use Value: 57 ns t_rr and 80 nC Q_r limit reverse recovery loss, enabling >95% efficiency at 50 A output current.

Motor Control Inverter

High-Current Load Switch

Use Scenario: Half-bridge leg in 24 V/48 V brushed DC motor driver for automated guided vehicle (AGV) traction.

IC Role / Device Role / Timing Role: Low-side switching element subjected to repetitive inductive turn-off stress and freewheeling current.

Use Value: 913 mJ unclamped avalanche energy rating allows safe operation during inductive flyback without external clamping diodes.

Use Scenario: Hot-swap and battery protection switch in 48 V data center rack power distribution unit (PDU).

IC Role / Device Role / Timing Role: Single-pole high-current switch controlling up to 120 A load with minimal voltage drop and thermal rise.

Use Value: 0.22 K/W R_th(j-mb) enables <15 °C junction rise above board temperature at 100 A with 10 cm² copper pour.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4110PBF	Higher R_DS(on) (2.7 mΩ typ), higher Q_G (180 nC), TO-220 package	Limited to lower-frequency (<100 kHz) and lower-current (<80 A) applications due to thermal and switching constraints	Prefer when TO-220 mechanical fit is required and gate drive can support higher Q_G.
STL220N6F7	Lower R_DS(on) (1.3 mΩ typ), but requires 15 V gate drive for full enhancement; DFN8 package	Not suitable for standard 10 V gate drive systems; limited thermal mass for sustained 120 A operation	Prefer only in space-constrained designs with 15 V gate bias and active cooling.

Compared with IRFB4110PBF and STL220N6F7, PSMN1R7-60BS uniquely balances ultra-low R_DS(on), standard 10 V gate compatibility, D2PAK thermal performance, and robust avalanche rating-making it optimal for high-current, high-reliability industrial power stages where both efficiency and ruggedness are non-negotiable.

Availability

PSMN1R7-60BS is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, motor control inverters, and high-current load switching applications requiring stable component supply across multi-year production cycles.

Supply support for PSMN1R7-60BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's standard-level MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial power conversion and motor control applications where 10 V gate drive simplicity and 175 °C operation are essential.

FAQ

Is PSMN1R7-60BS suitable for automotive applications?

No. The datasheet explicitly states this device is not automotive qualified. It lacks AEC-Q101 qualification, has no automotive-specific reliability testing, and is not rated for automotive temperature ranges or vibration requirements. Use only in industrial, communications, or domestic equipment per its qualification scope.

What is the maximum continuous drain current at T_mb = 100 °C?

Per Figure 1 in the datasheet, the continuous drain current is derated to approximately 75 A at T_mb = 100 °C. This reflects thermal limitation of the D2PAK package-not electrical degradation-and assumes proper PCB copper area and airflow per Nexperia's thermal guidelines.

Can PSMN1R7-60BS be used in parallel configurations?

Yes, but with careful attention to gate drive symmetry and current sharing. Its positive R_DS(on) temperature coefficient (2.66 mΩ at 100 °C, 3.82 mΩ at 175 °C) promotes inherent current balancing. However, individual gate resistors and matched PCB trace lengths are mandatory to avoid oscillation or uneven stress.

Does the mounting base require electrical isolation from the heatsink?

Yes. The mounting base is electrically connected to the drain (pin 2). If the heatsink is grounded or referenced to another potential, an electrically insulating but thermally conductive pad (e.g., mica or ceramic) must be used to prevent short circuits. Direct metal-to-metal contact is only safe when the heatsink is drain-referenced.

PSMN1R7-60BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9997 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN1R7-60BS,118 FAQ

1.How can I place an order for PSMN1R7-60BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R7-60BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R7-60BS,118 reliable?

The price and inventory of PSMN1R7-60BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R7-60BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN1R7-60BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R7-60BS,118 transactions.

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4.How is shipping managed for PSMN1R7-60BS,118?

PSMN1R7-60BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R7-60BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R7-60BS,118?

For technical support, including PSMN1R7-60BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R7-60BS,118 requirements.

6.How does Aetrix verify that PSMN1R7-60BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN1R7-60BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R7-60BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN1R7-60BS,118?

All PSMN1R7-60BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R7-60BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R7-60BS,118 part is unused and in its original packaging.

Return procedure for PSMN1R7-60BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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