Nexperia USA Inc. PSMN1R8-30BL,118

Overview

PSMN1R8-30BL from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V V_DS, 1.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in DC-DC converters, server power supplies, and motor control circuits where low conduction loss and direct 3.3/5 V gate drive compatibility are required.

For engineers reviewing the PSMN1R8-30BL datasheet, PSMN1R8-30BL pinout, PSMN1R8-30BL application, or PSMN1R8-30BL equivalent, key selection criteria include its 100 A continuous drain current capability at T_mb = 25 °C, 0.3 K/W typical junction-to-mounting-base thermal resistance, and verified avalanche energy rating of 1.1 J under unclamped inductive switching conditions.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching with minimal gate charge (Q_G(tot) = 83 nC at V_GS = 4.5 V). Its gate threshold voltage (V_GS(th)) ranges from 1.3 V to 2.15 V at 25 °C, enabling reliable turn-on with standard logic-level drivers.

The device integrates an intrinsic body diode with 64 ns reverse recovery time and 60 nC recovered charge, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design leverages the exposed mounting base (connected to drain) for direct heatsink attachment, achieving 0.3 K/W R_th(j-mb) under optimal conditions.

Key Specifications

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base is electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRF1404PBF and STL220N3LLH6, PSMN1R8-30BL uniquely balances ultra-low R_DS(on), logic-level gate drive, and D2PAK's bolt-down thermal interface-making it optimal for high-current, thermally demanding industrial power switches where both efficiency and mechanical robustness matter.

Availability

PSMN1R8-30BL is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for PSMN1R8-30BL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's Logic Level TrenchMOS family, engineered specifically for high-efficiency power switching in industrial, communications, and computing infrastructure where low gate drive voltage and thermal resilience are mandatory.

FAQ

What is the maximum continuous drain current for PSMN1R8-30BL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 60 A, per Figure 1 in the datasheet. This reflects thermal limitation of the D2PAK package-not silicon capability-and must be validated with actual heatsink thermal resistance and ambient conditions.

Can PSMN1R8-30BL be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes. With V_GS(th) as low as 1.3 V and typical 1.7 V, the device achieves full enhancement at 3.3 V. At 25 °C, R_DS(on) is 1.82 mΩ @ V_GS = 4.5 V, confirming usable conduction even at 3.3 V, though 100% rated current requires V_GS ≥ 4.5 V.

Is the mounting base electrically isolated from the drain terminal?

No. The mounting base is internally connected to pin 2 (drain) and forms part of the drain terminal. This configuration enables direct thermal coupling to a heatsink but requires electrical isolation of the heatsink from system ground if drain is not at ground potential.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At t_p = 100 µs, the SOA limits ID to ~300 A at V_DS = 10 V (Figure 3), governed by R_DS(on) and thermal inertia. This supports short-circuit withstand in motor drives and overload protection in power supplies without immediate failure.