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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R8-30MLHX

Name: PSMN1R8-30MLHX
Brand: Nexperia USA Inc.
SKU: PSMN1R8-30MLHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R8-30MLHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN1R8-30MLHX.pdf

Description:: MOSFET N-CH 30V 150A LFPAK33

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Product details

Overview

PSMN1R8-30MLHX from Nexperia is an N-channel logic-level power MOSFET in LFPAK33 (SOT1210) package, rated 30 V V_DS, 2.1 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 150 A continuous drain current at T_mb = 25 °C. It employs NextPowerS3 technology for low conduction loss, fast switching, and strong SOA performance, targeting high-efficiency synchronous rectification and motor control.

For engineers reviewing the PSMN1R8-30MLHX datasheet, PSMN1R8-30MLHX pinout, PSMN1R8-30MLHX application, or PSMN1R8-30MLHX equivalent, key selection criteria include its 4.5 V gate drive compatibility, 1.12 K/W junction-to-mounting-base thermal resistance, 5.6 nC Q_GD, 0.4–2.8 Ω gate resistance, and LFPAK33 copper-clip construction for high-current reliability.

Technical Context

This MOSFET uses trench-gate silicon with optimized cell pitch and copper-clip die attach to achieve ultra-low R_DS(on) while maintaining robust avalanche ruggedness (266 mJ E_AS) and linear-mode SOA. Its gate threshold voltage (1.2–2.2 V) and low gate charge (7.7–28 nC depending on V_GS) support efficient operation with standard logic-level drivers.

The device features a monolithic source-drain diode with soft reverse recovery (S = 0.87), low V_SD (0.79 V @ I_S = 25 A), and tight R_DS(on) temperature coefficient (−4.1 mV/K ΔV_GS(th)/ΔT), enabling stable performance across −55 °C to 175 °C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V bus systems and automotive 12 V/24 V architectures.
R_DS(on) @ V_GS = 10 V	1.76–2.1 mΩ - Enables <1.6 W conduction loss at 100 A, critical for high-current synchronous buck stages.
I_D continuous	150 A @ T_mb = 25 °C - Validated current rating supports eFuse and battery protection with minimal PCB copper area.
Q_G(tot)	7.7–28 nC - Low gate charge enables fast turn-on/off with modest driver strength, reducing switching losses below 100 kHz.
R_th(j-mb)	1.12–1.42 K/W - Direct thermal path to mounting base allows >100 W dissipation with simple heatsinking or copper pour.
Q_GD	1–11.2 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk and improves hard-switching stability.
V_GS(th)	1.2–2.2 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level-shifting.

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, copper-clip bonded package with exposed mounting base connected to drain, optimized for high-current thermal and electrical performance. Its 0.65 mm lead pitch and 3.2 × 2.0 mm footprint enable dense PCB layouts while supporting visual solder inspection via exposed leads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single low-inductance gate input optimized for fast edge rates and minimal ringing with 5 Ω external gate resistor.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat sink and high-current return path.

Key Features

Feature	Design Value
NextPowerS3 silicon process	Delivers 2.1 mΩ R_DS(on) at 30 V with <1 µA I_DSS leakage at 25 °C - balances conduction efficiency and off-state integrity.
Copper-clip LFPAK33 construction	Reduces parasitic inductance by >50% vs. wire-bonded packages and enables 175 °C T_j operation with high mechanical reliability.
Optimized for 4.5 V gate drive	Guarantees R_DS(on) ≤ 2.9 mΩ at V_GS = 4.5 V - ensures full enhancement with standard logic-level drivers in BLDC and DC-DC designs.
Strong linear-mode SOA	Rated for 150 A continuous and 624 A pulsed drain current - supports robust operation in eFuse current limiting and motor stall conditions.
Soft-recovery body diode	S = 0.87 with 30 ns t_rr - suppresses voltage spikes and EMI during freewheeling, easing filter design in synchronous rectifiers.

Applications

Synchronous Buck Regulator

Synchronous Rectifier

Use Scenario: High-efficiency 12 V → 1.2 V VRM in server CPU power delivery.

IC Role / Device Role / Timing Role: Low-side switch handling 100–150 A continuous current with <2 mΩ on-resistance to minimize I²R loss.

Use Value: Achieves >95% efficiency at full load due to sub-2 mΩ R_DS(on) and low Q_G, reducing thermal stress on adjacent components.

Use Scenario: Secondary-side rectification in 48 V → 12 V telecom DC-DC converters.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes, driven by controller with 4.5 V gate output.

Use Value: Cuts conduction loss by >40% vs. 40 V Schottky, enabling higher power density and lower case temperature rise.

BLDC Motor Control

eFuse and Battery Protection

Use Scenario: 3-phase inverter stage in 24 V cordless power tools driving 500 W brushless motors.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch with fast switching (<30 ns tr/tf) and robust SOA.

Use Value: Supports 10–20 kHz PWM without thermal derating, enabling precise torque control and reduced audible noise.

Use Scenario: Overcurrent protection in 24 V Li-ion battery packs for industrial portable equipment.

IC Role / Device Role / Timing Role: Current-sensing FET in active eFuse circuit, conducting up to 150 A with <10 mΩ total path resistance.

Use Value: Enables <100 µs fault response time and <1.5 V drop at 100 A, preserving system voltage during surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N03LS	R_DS(on) = 1.4 mΩ @ 10 V, but higher Q_G (32 nC) and larger PG-HSOF-8 package (5.15 × 6.25 mm).	Higher conduction efficiency but slower switching and less PCB space efficiency than LFPAK33.	Prefer when lowest possible R_DS(on) dominates over layout density and switching speed.
Vishay SiR626DP	R_DS(on) = 2.3 mΩ @ 10 V, 100 A rating, PowerPAK® 8×8 package with R_th(j-a) = 2.2 K/W (vs. 1.12 K/W j-mb).	Lower current rating and inferior thermal path to board - requires larger heatsink for same power dissipation.	Prefer when existing 8×8 footprint reuse is required and 150 A capability is not needed.

Compared with BSC014N03LS and SiR626DP, PSMN1R8-30MLHX delivers superior current density (150 A in 3.2 × 2.0 mm), best-in-class junction-to-mounting-base thermal resistance, and lowest Q_GD for high-frequency hard-switching - making it optimal for space-constrained, high-current, fast-switching applications.

Availability

PSMN1R8-30MLHX is available at Aetrix Electronics and suitable for synchronous buck regulators, BLDC motor inverters, eFuse circuits, and high-current DC-DC synchronous rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN1R8-30MLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This part belongs to Nexperia's NextPowerS3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in consumer, industrial, and computing applications where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN1R8-30MLHX under real-world PCB conditions?

The datasheet specifies 150 A continuous drain current at T_mb = 25 °C with adequate copper pour. In practice, sustained current is limited by PCB thermal design: with 25.4 mm × 25.4 mm 70 µm copper on FR4, derating begins above ~80 A at ambient 70 °C. Thermal simulation using R_th(j-mb) = 1.12 K/W is recommended for exact layout validation.

Can PSMN1R8-30MLHX be driven directly by a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) range (1.2–2.2 V) and guaranteed R_DS(on) ≤ 2.9 mΩ at V_GS = 4.5 V make it compatible with 3.3 V logic. However, full enhancement and minimal R_DS(on) require ≥4.5 V; for 3.3 V drive, expect R_DS(on) ≈ 3.5–5.3 mΩ (per Fig. 8 & 11), increasing conduction loss by ~70% versus 10 V drive.

How does the LFPAK33 package improve reliability compared to traditional SO-8 or DPAK?

LFPAK33 replaces aluminum bond wires with copper clips, eliminating wire-bond fatigue failure modes. Its direct die-to-mounting-base thermal path reduces junction-to-board resistance by >60% versus DPAK, and the exposed leads enable 100% automated optical solder inspection - critical for high-reliability industrial and computing applications.

Is PSMN1R8-30MLHX suitable for avalanche energy handling in inductive switching applications?

Yes - it is 100% tested for non-repetitive avalanche energy (E_AS = 266 mJ at I_D = 25 A, T_j = 25 °C) and current (I_AS = 87 A). This rating supports safe operation during inductive turn-off transients in motor drives and solenoid controls, provided single-pulse conditions and thermal limits are respected.

PSMN1R8-30MLHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3125 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN1R8-30MLHX FAQ

1.How can I place an order for PSMN1R8-30MLHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R8-30MLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R8-30MLHX reliable?

The price and inventory of PSMN1R8-30MLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R8-30MLHX is usually 5 days.

3.What payment methods are accepted for PSMN1R8-30MLHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R8-30MLHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R8-30MLHX?

PSMN1R8-30MLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R8-30MLHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R8-30MLHX?

For technical support, including PSMN1R8-30MLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R8-30MLHX requirements.

6.How does Aetrix verify that PSMN1R8-30MLHX is sourced from the original manufacturer or authorized distributors?

All PSMN1R8-30MLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R8-30MLHX meets industry standards.

7.What is the process for return or replacement of PSMN1R8-30MLHX?

All PSMN1R8-30MLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R8-30MLHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R8-30MLHX part is unused and in its original packaging.

Return procedure for PSMN1R8-30MLHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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