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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R8-30PL,127

Name: PSMN1R8-30PL,127
Brand: Nexperia USA Inc.
SKU: PSMN1R8-30PL,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R8-30PL,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN1R8-30PL,127.pdf

Description:: MOSFET N-CH 30V 100A TO220AB

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Product details

Overview

PSMN1R8-30PL from Nexperia is a logic-level N-channel MOSFET in TO-220AB package, rated for 30 V V_DS, 1.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency load switching in server power supplies and motor control circuits.

For engineers reviewing the PSMN1R8-30PL datasheet, PSMN1R8-30PL pinout, PSMN1R8-30PL application, or PSMN1R8-30PL equivalent, this device is selected for low-R_DS(on) performance at logic-level gate drive (V_GS(th) = 1.3–2.15 V), robust avalanche energy rating (1.1 J), and thermal reliability up to 175 °C in industrial-grade power stages.

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and fast switching in hard-switched DC-DC converters and synchronous rectification. Its gate threshold voltage (1.3–2.15 V at 25 °C) ensures reliable turn-on with 3.3 V or 5 V logic drivers, while its 0.3–0.56 K/W junction-to-mounting-base thermal resistance enables high-power operation with external heatsinking.

The device features a monolithic source-drain diode with 0.7–1.2 V forward voltage at 25 A and 64 ns reverse recovery time, supporting freewheeling in inductive loads. Its 83 nC total gate charge at V_GS = 4.5 V and 170 nC at 10 V allows scalable drive strength selection without compromising switching speed or EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V bus systems.
R_DS(on)	1.6–1.8 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.8 W conduction loss at 100 A, critical for high-current power stages.
I_D	100 A @ T_mb = 25 °C - Continuous current capability limited by TO-220AB package thermal design, not silicon.
E_AS	1.1 J unclamped avalanche energy - Supports robustness against inductive switching transients without external snubbers.
Q_G(tot)	83 nC @ V_GS = 4.5 V - Enables efficient drive with standard logic-level gate drivers (e.g., TC4420, UCC27531).
T_j max	175 °C - Extended temperature qualification enables use in sealed industrial enclosures and high-ambient server environments.
R_th(j-mb)	0.3–0.56 K/W - Low thermal resistance to mounting base allows direct heatsink attachment for >200 W dissipation.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted 3-lead configuration; mounting base electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Logic-level input controlling channel conduction; requires ≤2.15 V to turn on fully at room temperature.
2 (D)	Drain	Main high-side or low-side power path terminal; internally bonded to mounting base for thermal and electrical connection.
3 (S)	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) = 1.3–2.15 V enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting.
Low R_DS(on) at elevated temperature	R_DS(on) = 2.4 mΩ @ T_j = 100 °C ensures stable conduction loss across industrial operating range.
High avalanche ruggedness	1.1 J non-repetitive E_AS supports reliable operation in motor control and DC-DC converter primary-side switching.
Optimized dynamic characteristics	Q_GD/Q_G(tot) ratio of ~26% balances switching speed and voltage overshoot in hard-switched topologies.
Integrated source-drain diode	V_SD = 0.7–1.2 V @ 25 A provides low-loss freewheeling path with 64 ns t_rr, reducing need for external Schottky diodes.

Applications

Server Power Supply

Industrial Motor Control

Use Scenario: High-current 12 V output stage in ATX or OCP-compliant server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter secondary side, operating at 300–600 kHz.

Use Value: 1.8 mΩ R_DS(on) reduces conduction loss to <2.3 W at 100 A, improving system efficiency by ≥0.8% versus 3 mΩ alternatives.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during PWM commutation and regenerative braking.

Use Value: 175 °C T_j rating and 1.1 J avalanche energy withstand repeated inductive kickback without derating.

DC-DC Converter

Load Switching

Use Scenario: Primary-side high-side switch in isolated 48 V–12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in active-clamp forward or LLC resonant topology.

Use Value: 83 nC Q_G(tot) at 4.5 V enables fast turn-on with minimal gate driver power, reducing switching loss by 15% vs. higher-Q devices.

Use Scenario: Hot-swap and inrush current limiting in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Main power path switch controlled by dedicated load switch IC or discrete gate driver.

Use Value: TO-220AB package with drain-connected mounting base simplifies thermal management in space-constrained DIN-rail enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; V_DS = 40 V; Q_G(tot) = 131 nC; T_j = 175 °C	Higher conduction loss and gate charge; suitable only where 40 V rating is mandatory and efficiency is secondary.	Select only if 40 V blocking is required and thermal margin permits higher R_DS(on).
STP120N3LLH6	R_DS(on) = 2.0 mΩ @ 10 V; V_DS = 30 V; Q_G(tot) = 95 nC; T_j = 175 °C; TO-220FP package	Slightly higher R_DS(on) and gate charge; smaller TO-220FP package limits heatsink area and power dissipation.	Prefer when footprint constraints outweigh 0.2 mΩ R_DS(on) and 12 nC Q_G advantages.

Compared with IRF1404PBF and STP120N3LLH6, PSMN1R8-30PL offers the lowest R_DS(on) and gate charge in TO-220AB, enabling highest efficiency in thermally demanding 100 A applications where full-package heatsinking is available.

Availability

PSMN1R8-30PL is available at Aetrix Electronics and suitable for server power supplies, industrial motor control systems, and high-current DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN1R8-30PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to Nexperia's Logic Level Power MOSFET product line, engineered for high-efficiency switching in industrial power conversion, motor drives, and computing infrastructure where low gate drive voltage and thermal resilience are essential.

FAQ

What is the maximum continuous drain current for PSMN1R8-30PL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 55 A per Figure 1 in the datasheet. This reflects thermal limitation of the TO-220AB package, not silicon capability, and assumes proper heatsink attachment to the drain-connected mounting base.

Can PSMN1R8-30PL be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range (1.3–2.15 V at 25 °C) and low 83 nC gate charge at 4.5 V ensure reliable enhancement-mode turn-on with 3.3 V logic. However, full R_DS(on) specification (1.8 mΩ) requires V_GS ≥ 4.5 V; operation at 3.3 V yields higher on-resistance (~2.3 mΩ typical).

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base (mb) is internally connected to the drain terminal, as confirmed in Table 2 (Pinning information) and Figure 18 (Package outline). This requires electrical isolation between heatsink and system ground when used in high-side configurations.

What is the typical reverse recovery time of the integrated body diode?

The source-drain diode exhibits t_rr = 64 ns under conditions of I_S = 30 A, dI_S/dt = −100 A/µs, V_DS = 12 V, and V_GS = 0 V, as specified in Table 6. This value supports moderate-frequency freewheeling in motor control and DC-DC applications without external diode replacement.

PSMN1R8-30PL,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10180 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN1R8-30PL,127 FAQ

1.How can I place an order for PSMN1R8-30PL,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R8-30PL,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R8-30PL,127 reliable?

The price and inventory of PSMN1R8-30PL,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R8-30PL,127 is usually 5 days.

3.What payment methods are accepted for PSMN1R8-30PL,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R8-30PL,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R8-30PL,127?

PSMN1R8-30PL,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R8-30PL,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R8-30PL,127?

For technical support, including PSMN1R8-30PL,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R8-30PL,127 requirements.

6.How does Aetrix verify that PSMN1R8-30PL,127 is sourced from the original manufacturer or authorized distributors?

All PSMN1R8-30PL,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R8-30PL,127 meets industry standards.

7.What is the process for return or replacement of PSMN1R8-30PL,127?

All PSMN1R8-30PL,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R8-30PL,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R8-30PL,127 part is unused and in its original packaging.

Return procedure for PSMN1R8-30PL,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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