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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R8-80SSFJ

Name: PSMN1R8-80SSFJ
Brand: Nexperia USA Inc.
SKU: PSMN1R8-80SSFJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R8-80SSFJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMN1R8-80SSFJ.pdf

Description:: NEXTPOWER 80/100V MOSFETS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R8-80SSF from Nexperia is an N-channel NextPower 80 V MOSFET in LFPAK88 (SOT1235) package, rated for 270 A continuous drain current at T_mb = 25 °C, with typ. R_DS(on) = 1.35 mΩ at V_GS = 10 V and T_j = 25 °C, qualified to 175 °C junction temperature, and used as primary-side switch in high-current DC-DC converters.

For engineers reviewing the PSMN1R8-80SSF datasheet, PSMN1R8-80SSF pinout, PSMN1R8-80SSF application, or PSMN1R8-80SSF equivalent, key selection criteria include its 80 V V_DS, ultra-low 1.35 mΩ R_DS(on), 148 nC typical Q_G(tot), avalanche-rated ruggedness (847 mJ E_AS), and LFPAK88 thermal performance (R_th(j-mb) = 0.2 K/W).

Technical Context

This MOSFET employs a trench-gate superjunction structure optimized for low Q_G × R_DS(on) figure-of-merit (148 nC × 1.35 mΩ ≈ 200 pC·Ω), enabling high-efficiency hard-switching in 48 V–60 V bus systems. Its gate threshold voltage (V_GS(th)) ranges 2–4 V at 25 °C and remains ≥1.6 V up to 175 °C, supporting robust standard-level (10 V) gate drive.

The device integrates a co-packaged source-drain diode with 59 nC recovered charge (Q_r) and 56 ns reverse recovery time (t_rr), enabling synchronous rectification without external Schottky replacement. Mounting base (drain-connected) thermal path delivers 0.2 K/W junction-to-mounting-base resistance under optimal PCB copper layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V/60 V industrial DC-DC and motor control topologies.
I_D(max)	270 A @ T_mb = 25 °C - Continuous current capability validated with thermal derating curves up to 205 A at T_mb = 100 °C.
R_DS(on)	1.35 mΩ typ. @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 100 A, critical for high-power density designs.
Q_G(tot)	148 nC typ. @ V_DS = 40 V, V_GS = 10 V - Determines gate driver power requirement and switching speed in hard-switched converters.
E_AS	847 mJ - Non-repetitive avalanche energy rating, verified 100% per unit, supports unclamped inductive turn-off robustness.
R_th(j-mb)	0.2 K/W typ. - Thermal resistance from junction to mounting base enables >340 W power dissipation with minimal ΔT under forced-air or heatsink cooling.
t_rr	56 ns - Fast reverse recovery of integrated body diode reduces switching losses in synchronous rectifier operation.

Pinout & Package

LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package with 8 mm × 8 mm footprint, 1.6 mm height, and exposed metal mounting base electrically connected to drain. Optimized for high-current PCB thermal management using 70 µm copper on FR4.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate terminal - accepts standard 10 V logic-level drive; gate resistance R_G = 1.6 Ω typ. limits ringing.
2, 3, 4	S	Source terminals - three parallel source leads minimize source inductance and improve current sharing in high-di/dt applications.
Mounting base	D	Drain-connected thermal pad - provides primary heat transfer path and low-inductance drain connection; requires soldered thermal pad on PCB.

Key Features

Feature	Design Value
Low Q_rr	59 nC - Reduces voltage spikes and EMI during diode commutation in synchronous rectifiers and half-bridges.
High avalanche ruggedness	847 mJ E_AS, 100% tested - Eliminates need for external snubbers in inductive load switching and protects against transient overvoltage.
Ultra-low R_DS(on) × Q_G	~200 pC·Ω - Balances conduction and switching losses for peak efficiency in 100–500 kHz DC-DC converters.
175 °C rated junction	Extended thermal margin - Enables operation in sealed enclosures or high ambient environments without derating penalties.
RoHS-compliant LFPAK88	Halogen-free, lead-free, and compatible with standard reflow profiles - Supports industrial and consumer compliance requirements.

Applications

AC-DC Synchronous Rectifier

Primary-Side DC-DC Switch

Use Scenario: High-efficiency secondary-side rectification in telecom and server PSUs with 12 V/48 V outputs.

IC Role / Device Role / Timing Role: Low-V_F replacement for Schottky diodes, driven synchronously by controller PWM signal.

Use Value: 59 nC Q_r and 56 ns t_rr reduce reverse recovery loss by >40% vs. conventional MOSFETs, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Primary-side high-side switch in isolated forward or active-clamp forward converters.

IC Role / Device Role / Timing Role: Main power switch handling 270 A peak currents during 100–300 kHz switching cycles.

Use Value: 1.35 mΩ R_DS(on) limits conduction loss to <3.6 W at 150 A, enabling compact heatsink design and >96% converter efficiency.

BLDC Motor Inverter

Battery Protection FET

Use Scenario: 3-phase inverter stage in industrial BLDC drives operating from 48 V battery or bus.

IC Role / Device Role / Timing Role: Low-side or high-side phase switch in 6-step commutation, subject to repetitive avalanche stress.

Use Value: 847 mJ E_AS withstands motor back-EMF transients without failure, eliminating need for external clamping diodes.

Use Scenario: Main discharge/charge FET in 48 V Li-ion battery packs for e-bikes and energy storage.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with fast short-circuit response and overcurrent protection.

Use Value: 270 A continuous rating supports >5 kW discharge bursts; 1158 A pulsed rating enables <10 µs fault clearing in fuseless designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N	R_DS(on) = 2.6 mΩ @ 10 V; Q_G(tot) = 110 nC; TO-220FP package; R_th(j-c) = 1.2 K/W	Higher conduction loss, lower thermal performance, through-hole mounting	Select when legacy TO-220 layout exists and 100 A max current suffices; avoid for >200 A or surface-mount constraints.
Vishay SiR626DP	R_DS(on) = 1.7 mΩ @ 10 V; Q_G(tot) = 160 nC; PowerPAK 8x8 package; R_th(j-mb) = 0.35 K/W	Slightly higher R_DS(on), higher Q_G, less efficient thermal path than LFPAK88	Acceptable for space-constrained 48 V DC-DC where 0.2 K/W thermal advantage is non-critical; verify layout compatibility with SOT1235 footprint.

Compared with IPP026N08N and SiR626DP, PSMN1R8-80SSF delivers the lowest R_DS(on) × Q_G product and best thermal resistance, making it optimal for high-power-density, high-reliability 270 A applications where board space and thermal headroom are constrained.

Availability

PSMN1R8-80SSF is available at Aetrix Electronics and suitable for high-current DC-DC converters, BLDC motor inverters, and battery protection circuits requiring stable component supply across industrial OEM production ramps.

Supply support for PSMN1R8-80SSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions for industrial, automotive, and consumer markets.

PSMN1R8-80SSF belongs to the NextPower 80 V series, engineered specifically for high-current, high-efficiency power conversion in 48 V–60 V systems where low R_DS(on), rugged avalanche behavior, and superior thermal performance are mandatory.

FAQ

What is the maximum continuous drain current rating for PSMN1R8-80SSF?

The device is rated for 270 A continuous drain current at mounting base temperature (T_mb) = 25 °C, with derated values down to 205 A at T_mb = 100 °C. This rating assumes proper PCB copper area (25.4 mm square, 70 µm thick) and thermal interface to heatsink or chassis.

Is PSMN1R8-80SSF suitable for synchronous rectification?

Yes - its integrated source-drain diode exhibits 59 nC recovered charge (Q_r) and 56 ns reverse recovery time (t_rr) at 25 °C, enabling low-loss synchronous rectification in AC-DC and isolated DC-DC converters without external Schottky diodes.

Does PSMN1R8-80SSF require gate resistors for reliable switching?

A gate resistor (typically 2–5 Ω) is recommended to dampen ringing caused by parasitic inductance in high-di/dt layouts. The device's internal gate resistance is 1.6 Ω typ., and external resistance controls dv/dt and EMI while maintaining 148 nC total gate charge timing integrity.

How is avalanche ruggedness verified for this MOSFET?

Nexperia performs 100% production testing for non-repetitive avalanche energy (E_AS) at 847 mJ under defined conditions (I_D = 89.3 A, V_sup ≤ 80 V, R_GS = 50 Ω, T_j(init) = 25 °C, unclamped, t_p = 182 µs), ensuring every unit meets specification before shipment.

PSMN1R8-80SSFJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 270A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 222 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15319 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMN1R8-80SSFJ FAQ

1.How can I place an order for PSMN1R8-80SSFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R8-80SSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R8-80SSFJ reliable?

The price and inventory of PSMN1R8-80SSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R8-80SSFJ is usually 5 days.

3.What payment methods are accepted for PSMN1R8-80SSFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R8-80SSFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R8-80SSFJ?

PSMN1R8-80SSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R8-80SSFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R8-80SSFJ?

For technical support, including PSMN1R8-80SSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R8-80SSFJ requirements.

6.How does Aetrix verify that PSMN1R8-80SSFJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R8-80SSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R8-80SSFJ meets industry standards.

7.What is the process for return or replacement of PSMN1R8-80SSFJ?

All PSMN1R8-80SSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R8-80SSFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R8-80SSFJ part is unused and in its original packaging.

Return procedure for PSMN1R8-80SSFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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