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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN1R9-40PL127

Name: PSMN1R9-40PL127
Brand: NXP Semiconductors
SKU: PSMN1R9-40PL127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R9-40PL127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN1R9-40PL127.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

PSMN1R9-40PL from Nexperia is an N-channel logic-level MOSFET in TO-220AB (SOT78) package, rated for 40 V drain-source voltage, 1.7 mΩ R_DS(on) at V_GS = 10 V and 25 A, and optimized for high-efficiency battery-powered power tools. It delivers robust avalanche energy handling (801.1 mJ) and supports continuous 150 A drain current with heatsink mounting.

For engineers reviewing the PSMN1R9-40PL datasheet, PSMN1R9-40PL pinout, PSMN1R9-40PL application, or PSMN1R9-40PL equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, 230 nC total gate charge, thermal resistance of 0.35 K/W (junction-to-mounting-base), and suitability for motor control and load switching in portable industrial equipment.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low conduction losses and high switching efficiency. Its logic-level gate threshold (V_GS(th) = 1.4–2.1 V typ.) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The device features integrated source-drain diode with 0.77 V forward voltage at 25 A and 57 ns reverse recovery time, supporting synchronous rectification and freewheeling in H-bridge motor drivers. Its 1332 A peak drain current rating and unclamped avalanche capability support transient overloads in power tool startup and stall conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe operating voltage ceiling for battery systems up to 36 V nominal (e.g., 10S Li-ion packs).
R_DS(on)	1.7 mΩ max at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 75 A, critical for thermal management in compact tools.
I_D (continuous)	150 A at T_mb = 25 °C - limited by TO-220AB package thermal capacity; requires heatsink mounting per datasheet Fig. 1.
Q_G(tot)	230 nC - determines gate driver power requirement and switching speed; impacts turn-on delay (95 ns) and rise time (118 ns).
E_DS(AL)S	801.1 mJ non-repetitive avalanche energy - provides single-event ruggedness during inductive load turn-off without external snubbers.
R_th(j-mb)	0.35 K/W typical - enables efficient heat transfer to external heatsink, supporting sustained high-current operation in handheld tools.
V_GS(th)	1.4–2.1 V typical at T_j = 25 °C - ensures reliable turn-on with standard logic-level MCU outputs (3.3 V/5 V).

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted base and 3 leads. Mounting base serves as thermal interface and electrical drain connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level input (V_GS(th) ≤ 2.1 V); requires 230 nC charge for full enhancement.
2 (D)	Drain	Main power output terminal; electrically connected to mounting base; carries full load current and dissipates heat via heatsink.
3 (S)	Source	Reference node for gate drive; forms return path for load current; used for current sensing in low-side configurations.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 4.5 V gate voltage (R_DS(on) = 1.65–1.94 mΩ), eliminating need for gate driver ICs in 3.3 V/5 V systems.
TrenchMOS technology	Delivers ultra-low R_DS(on) and high cell density, enabling 150 A continuous current in TO-220AB without derating beyond thermal limits.
Avalanche-rated design	Withstands 801.1 mJ unclamped inductive energy, allowing safe operation in motor commutation without external protection components.
Robust thermal performance	0.35 K/W junction-to-mounting-base resistance enables >300 W power dissipation with modest heatsinking, matching power tool burst-load demands.

Applications

Battery-Powered Power Tools	Motor Control in Cordless Drills
Use Scenario: High-current switching in 18–40 V cordless drill motor drivers during start-up, stall, and direction reversal. IC Role / Device Role / Timing Role: Low-side or high-side main power switch controlling brushed DC motor phase current. Use Value: 1.7 mΩ R_DS(on) minimizes I²R heating during 100+ A stall currents, while 801.1 mJ avalanche rating absorbs flyback energy without failure.	Use Scenario: Bidirectional H-bridge for reversible motor control in compact cordless screwdrivers. IC Role / Device Role / Timing Role: One quadrant switch in discrete H-bridge topology, driven by PWM from MCU with 4.5 V logic levels. Use Value: Logic-level V_GS(th) allows direct MCU GPIO drive; 230 nC Q_G enables fast switching at 20–50 kHz PWM frequencies without excessive gate loss.
Uninterruptible Power Supplies (UPS)	High-Current Load Switching
Use Scenario: Battery-to-inverter isolation and backup power path switching in 24–36 V offline UPS units. IC Role / Device Role / Timing Role: Main battery disconnect switch activated during AC mains failure or overload events. Use Value: 150 A continuous rating supports >2 kW output; low R_DS(on) reduces voltage drop across switch, preserving battery runtime and regulation accuracy.	Use Scenario: Hot-swap or emergency shutdown of high-power subsystems (e.g., lighting arrays, actuators) in industrial portable equipment. IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlled by system supervisor or safety controller. Use Value: TO-220AB mounting base enables bolt-down heatsinking for sustained 100 A loads; 1332 A peak rating handles inrush surges from capacitive or inductive loads.

Battery-Powered Power Tools

Motor Control in Cordless Drills

Use Scenario: High-current switching in 18–40 V cordless drill motor drivers during start-up, stall, and direction reversal.

IC Role / Device Role / Timing Role: Low-side or high-side main power switch controlling brushed DC motor phase current.

Use Value: 1.7 mΩ R_DS(on) minimizes I²R heating during 100+ A stall currents, while 801.1 mJ avalanche rating absorbs flyback energy without failure.

Use Scenario: Bidirectional H-bridge for reversible motor control in compact cordless screwdrivers.

IC Role / Device Role / Timing Role: One quadrant switch in discrete H-bridge topology, driven by PWM from MCU with 4.5 V logic levels.

Use Value: Logic-level V_GS(th) allows direct MCU GPIO drive; 230 nC Q_G enables fast switching at 20–50 kHz PWM frequencies without excessive gate loss.

Uninterruptible Power Supplies (UPS)

High-Current Load Switching

Use Scenario: Battery-to-inverter isolation and backup power path switching in 24–36 V offline UPS units.

IC Role / Device Role / Timing Role: Main battery disconnect switch activated during AC mains failure or overload events.

Use Value: 150 A continuous rating supports >2 kW output; low R_DS(on) reduces voltage drop across switch, preserving battery runtime and regulation accuracy.

Use Scenario: Hot-swap or emergency shutdown of high-power subsystems (e.g., lighting arrays, actuators) in industrial portable equipment.

IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlled by system supervisor or safety controller.

Use Value: TO-220AB mounting base enables bolt-down heatsinking for sustained 100 A loads; 1332 A peak rating handles inrush surges from capacitive or inductive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	Higher R_DS(on) (4.7 mΩ), higher Q_G (131 nC), TO-220AB package, 40 V rating	Lower efficiency in high-current continuous operation; less suitable for battery tools requiring minimal conduction loss	Choose only if cost sensitivity outweighs thermal performance; verify gate drive compatibility with 4 V threshold.
STP120N4F6	Lower R_DS(on) (1.3 mΩ), higher Q_G (270 nC), TO-220 package, 40 V rating	Improved conduction loss but slower switching due to higher gate charge; requires stronger gate driver	Prefer when conduction loss dominates system thermal budget; confirm PCB layout supports higher gate drive current.

Compared with PSMN1R9-40PL, IRF1404PBF trades lower cost for significantly higher conduction loss, while STP120N4F6 improves R_DS(on) at the expense of gate drive strength and switching speed-making PSMN1R9-40PL the balanced choice for logic-driven, thermally constrained battery tool designs.

Availability

PSMN1R9-40PL is available at Aetrix Electronics and suitable for battery-powered tools, uninterruptible power supplies, and high-current load switching requiring stable component supply and long-term industrial availability.

Supply support for PSMN1R9-40PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-grade components.

The PSMN1R9-40PL belongs to Nexperia's logic-level TrenchMOS power MOSFET product line, engineered specifically for high-efficiency, high-current switching in portable industrial equipment such as cordless power tools and mobile UPS systems.

FAQ

What is the maximum continuous drain current rating for PSMN1R9-40PL?

The PSMN1R9-40PL supports 150 A continuous drain current when mounted on a heatsink at T_mb = 25 °C (per datasheet Fig. 1). This rating is package-limited-not silicon-limited-and decreases linearly with mounting base temperature, reaching ~90 A at T_mb = 100 °C. The PSMN1R9-40PL must be heatsink-mounted per SOT78 mechanical specifications to achieve this rating.

Does PSMN1R9-40PL support 3.3 V microcontroller gate drive?

Yes, the PSMN1R9-40PL is a logic-level MOSFET with V_GS(th) ranging from 1.4 V to 2.1 V typical at 25 °C, and it achieves R_DS(on) = 1.65–1.94 mΩ at V_GS = 4.5 V. While full enhancement is best achieved at ≥4.5 V, the PSMN1R9-40PL remains functional with 3.3 V drive in moderate-current applications, though R_DS(on) increases-consult Fig. 7 in the datasheet for exact values.

What is the thermal resistance from junction to mounting base for PSMN1R9-40PL?

The PSMN1R9-40PL has a typical thermal resistance R_th(j-mb) of 0.35 K/W (max 0.43 K/W), measured from silicon junction to the TO-220AB mounting base. This low value enables efficient heat transfer to an external heatsink, supporting high-power operation. The PSMN1R9-40PL's thermal performance is validated under standardized test conditions per Fig. 5 in the datasheet.

Is PSMN1R9-40PL suitable for avalanche-prone motor control circuits?

Yes, the PSMN1R9-40PL is explicitly rated for unclamped inductive switching with E_DS(AL)S = 801.1 mJ (ID = 150 A, V_sup ≤ 40 V, R_GS = 50 Ω). This makes the PSMN1R9-40PL suitable for motor freewheeling and H-bridge commutation where flyback energy must be absorbed internally-reducing or eliminating the need for external snubber networks.

What are the pin assignments and package type for PSMN1R9-40PL?

The PSMN1R9-40PL uses the TO-220AB package (SOT78) with three leads: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The mounting base is electrically connected to the drain and serves as the primary thermal interface. This configuration is confirmed in Table 2 (Pinning information) and Fig. 17 (Package outline) of the official Nexperia datasheet for PSMN1R9-40PL.

PSMN1R9-40PL127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 349W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN1R9-40PL127 FAQ

1.How can I place an order for PSMN1R9-40PL127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R9-40PL127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R9-40PL127 reliable?

The price and inventory of PSMN1R9-40PL127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R9-40PL127 is usually 5 days.

3.What payment methods are accepted for PSMN1R9-40PL127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R9-40PL127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R9-40PL127?

PSMN1R9-40PL127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R9-40PL127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R9-40PL127?

For technical support, including PSMN1R9-40PL127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R9-40PL127 requirements.

6.How does Aetrix verify that PSMN1R9-40PL127 is sourced from the original manufacturer or authorized distributors?

All PSMN1R9-40PL127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R9-40PL127 meets industry standards.

7.What is the process for return or replacement of PSMN1R9-40PL127?

All PSMN1R9-40PL127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R9-40PL127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R9-40PL127 part is unused and in its original packaging.

Return procedure for PSMN1R9-40PL127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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