Nexperia USA Inc. PSMN1R9-40PLQ
- Part No.:
- PSMN1R9-40PLQ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PSMN1R9-40PLQ.pdf
- Description:
- MOSFET N-CH 40V 150A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:467
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Product details
Overview
PSMN1R9-40PL from Nexperia is a logic-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 40 V VDS, 1.7 mΩ RDS(on) at VGS = 10 V and 25 A, with 150 A continuous drain current capability at Tmb = 25 °C and 349 W total power dissipation - optimized for high-efficiency motor control in battery-powered power tools.
For engineers reviewing the PSMN1R9-40PL datasheet, PSMN1R9-40PL pinout, PSMN1R9-40PL application, or PSMN1R9-40PL equivalent, key selection criteria include its low 1.4–1.7 mΩ on-resistance at 4.5 V and 10 V gate drive, robust 801.1 mJ unclamped avalanche energy rating, and thermal resistance of 0.35 K/W from junction to mounting base - critical for thermally constrained tool motor drivers.
Technical Context
This device employs TrenchMOS technology to achieve ultra-low conduction losses while maintaining logic-level gate drive compatibility (VGS(th) typ. 1.7 V, max 2.45 V at −55 °C). Its gate threshold voltage remains stable across temperature (0.5–2.3 V range from −55 °C to 175 °C), enabling reliable turn-on in cold-start battery tool applications.
The MOSFET features integrated body diode with 57 ns reverse recovery time and 97 nC recovered charge, supporting synchronous rectification and freewheeling in H-bridge motor drives. Its SOA supports 1332 A pulsed drain current (tp ≤ 10 µs), enabling robust overcurrent handling during stall conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines upper limit for battery stack (e.g., 36 V nominal Li-ion packs). |
| RDS(on) | 1.4–1.7 mΩ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.7 W conduction loss at 100 A, critical for thermal management in compact tools. |
| ID (cont) | 150 A @ Tmb = 25 °C - Continuous current limited by TO-220AB package thermal capacity, not silicon. |
| QG(tot) | 230 nC - Total gate charge determines driver strength requirement; enables fast switching with moderate gate drive. |
| EAS | 801.1 mJ - Non-repetitive avalanche energy rating ensures survival during inductive load turn-off transients without external snubbers. |
| Rth(j-mb) | 0.35–0.43 K/W - Low junction-to-mounting-base thermal resistance allows direct heatsink mounting for high-power motor phase legs. |
| VGS(th) | 0.5–2.45 V - Logic-level threshold enables full enhancement with 3.3 V or 5 V microcontroller GPIO, eliminating level-shifting circuitry. |
Pinout & Package
TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base, 3 leads, and one mounting hole. Mounting base serves as drain connection and primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate terminal - accepts logic-level drive (≤10 V); requires <230 nC charge for full enhancement. |
| 2 | D | Drain terminal - electrically connected to mounting base; must be isolated from PCB ground when heatsinked to chassis. |
| 3 | S | Source terminal - reference node for gate drive and current sensing; connects to low-side switch node or shunt resistor. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to 4.5 V VGS, enabling direct interface with 3.3 V/5 V MCUs without gate drivers. |
| TrenchMOS technology | Delivers 1.4 mΩ RDS(on) at 10 V while maintaining ruggedness - reduces conduction loss by >30% vs. planar MOSFETs at same voltage class. |
| High avalanche ruggedness | 801.1 mJ EAS supports unclamped inductive switching in motor H-bridges without external protection components. |
| Low QGD/QG ratio | 40.9 nC / 230 nC ≈ 18% - improves hard-switching efficiency and reduces Miller-induced shoot-through risk in bridge topologies. |
| Integrated body diode | 57 ns trr, 97 nC Qr - enables efficient freewheeling in brushed DC motor drives with minimal reverse recovery loss. |
Applications
| Battery-Powered Power Tools | Industrial Motor Control |
|---|---|
|
Use Scenario: High-current H-bridge driver in cordless drills and impact drivers using 10–18S Li-ion packs. IC Role / Device Role / Timing Role: Low-side and high-side switching element in 3-phase or dual-H-bridge motor driver stage. Use Value: 1.7 mΩ RDS(on) minimizes heat generation during sustained torque delivery, extending runtime and reducing heatsink size. |
Use Scenario: Load switching and speed control in portable industrial pumps, compressors, and conveyors. IC Role / Device Role / Timing Role: Main power switch in PWM-controlled BLDC or brushed DC motor driver modules. Use Value: 801.1 mJ avalanche rating withstands back-EMF spikes during sudden motor stop or jam, improving system reliability. |
| Uninterruptible Power Supplies | Load Switching in Portable Equipment |
|
Use Scenario: Output stage switch in offline UPS inverters converting 24–48 V DC bus to AC output. IC Role / Device Role / Timing Role: Synchronous rectifier and bidirectional power switch in half-bridge topology. Use Value: Low QG and fast switching (tf = 119 ns) reduce switching losses at 20–50 kHz operating frequencies. |
Use Scenario: Hot-swap and battery isolation switch in medical handheld devices and test equipment. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power path controller with controlled inrush limiting. Use Value: Logic-level gate enables simple RC-based soft-start control; 150 A rating supports future-proof design headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.0 mΩ @ 10 V; higher gate charge (191 nC); TO-220 package but no mounting hole. | Lower current density and higher conduction loss - suitable only for lower-power (<500 W) tools. | Select only if legacy design reuse or cost sensitivity outweighs efficiency and thermal performance requirements. |
| STP110N4F6 | RDS(on) = 3.3 mΩ @ 10 V; 110 A ID; similar TO-220AB footprint but higher RDS(on) and lower avalanche rating (320 mJ). | Limited to mid-power motor drives where peak avalanche stress is mitigated by external clamping. | Prefer only when existing PCB layout constrains replacement to identical pinout and thermal pad geometry. |
Compared with IRF1404PBF and STP110N4F6, PSMN1R9-40PL delivers 2.4× lower RDS(on), 2.5× higher avalanche energy, and superior thermal resistance - making it the optimal choice for high-efficiency, high-reliability battery tool motor drivers where thermal headroom and transient robustness are critical.
Availability
PSMN1R9-40PL is available at Aetrix Electronics and suitable for battery-powered power tools, uninterruptible power supplies, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for PSMN1R9-40PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from Philips in 2017 and headquartered in Nijmegen, Netherlands.
This part belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, thermally demanding applications in battery-operated power tools and industrial motor drives.
FAQ
What is the maximum continuous drain current for PSMN1R9-40PL under real-world PCB heatsinking?
The datasheet specifies 150 A continuous drain current at Tmb = 25 °C with ideal heatsinking. In typical double-sided PCB designs with copper pour and modest heatsink contact, derating to 80–100 A is recommended to maintain Tj ≤ 150 °C. The limiting factor is package thermal resistance, not silicon capability.
Can PSMN1R9-40PL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?
Yes - its VGS(th) ranges from 0.5 V to 2.45 V, and RDS(on) is 1.65–1.94 mΩ at VGS = 4.5 V. At 3.3 V, it achieves partial enhancement (RDS(on) ~2.5–3.0 mΩ), sufficient for low-duty-cycle or low-current applications; for full 1.7 mΩ performance, 4.5 V or higher is required.
How does the 801.1 mJ avalanche rating translate to real motor-drive reliability?
This rating means the device can absorb a single 801.1 mJ inductive energy spike - equivalent to interrupting 150 A through 72 µH inductance at 40 V. In brushed tool motors (typically 50–200 µH), this covers worst-case stall or commutation events without failure, eliminating need for external avalanche diodes in most designs.
Is the TO-220AB mounting base electrically isolated from the PCB in standard layouts?
No - Pin 2 (D) and the mounting base are internally connected and electrically common. When mounted to a metal heatsink, the drain is referenced to heatsink potential. Isolation requires insulating hardware (e.g., silicone washer + shoulder screw) or use of an isolated heatsink mount, which increases Rth(j-mb) by ~0.1–0.2 K/W.
PSMN1R9-40PLQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PSMN1R9-40PLQ FAQ
1.How can I place an order for PSMN1R9-40PLQ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R9-40PLQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R9-40PLQ reliable?
The price and inventory of PSMN1R9-40PLQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R9-40PLQ is usually 5 days.
3.What payment methods are accepted for PSMN1R9-40PLQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R9-40PLQ transactions.
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4.How is shipping managed for PSMN1R9-40PLQ?
PSMN1R9-40PLQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R9-40PLQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R9-40PLQ?
For technical support, including PSMN1R9-40PLQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R9-40PLQ requirements.
6.How does Aetrix verify that PSMN1R9-40PLQ is sourced from the original manufacturer or authorized distributors?
All PSMN1R9-40PLQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R9-40PLQ meets industry standards.
7.What is the process for return or replacement of PSMN1R9-40PLQ?
All PSMN1R9-40PLQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R9-40PLQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R9-40PLQ part is unused and in its original packaging.
Return procedure for PSMN1R9-40PLQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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