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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R9-40YSBX

Name: PSMN1R9-40YSBX
Brand: Nexperia USA Inc.
SKU: PSMN1R9-40YSBX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R9-40YSBX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN1R9-40YSBX.pdf

Description:: PSMN1R9-40YSB/SOT669/LFPAK

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Product details

Overview

PSMN1R9-40YSBX from Nexperia is a standard-level N-channel MOSFET designed for high-current, high-efficiency power switching in industrial and motor control systems. It delivers 40 V V_DS, 1.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 200 A continuous drain current (T_mb = 25 °C), and operates up to 175 °C junction temperature in the LFPAK56 package. Its NextPowerS3 Schottky-Plus technology enables soft body-diode recovery and low Q_rr for reduced EMI in DC-DC converters and BLDC inverters.

For engineers reviewing the PSMN1R9-40YSBX datasheet, PSMN1R9-40YSBX pinout, PSMN1R9-40YSBX application, or PSMN1R9-40YSBX equivalent, key selection criteria include its 0.69 K/W junction-to-mounting-base thermal resistance, 180 A avalanche rating (100% tested), 7.6 nC typical Q_GD, and LFPAK56 package compatibility with wave and reflow soldering - all critical for high-reliability load-switch and eFuse designs.

Technical Context

This MOSFET employs TrenchMOS Superjunction architecture optimized for enhanced EMC performance (up to 6 dB improvement) and linear-mode SOA robustness. Its Schottky-Plus body diode achieves 0.8 V typical V_SD at 25 A and 33 ns trr, enabling efficient synchronous rectification and bidirectional current handling in battery isolation circuits.

The device uses copper-clip die attach and exposed mounting base (drain-connected) in LFPAK56 (SOT669), delivering low parasitic inductance and resistance. Gate threshold voltage is 3.1 V typ (2.4–3.6 V range), with -7.2 mV/K temperature coefficient, supporting stable gate drive across automotive-grade thermal ranges despite non-automotive qualification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - supports 36 V nominal bus systems with 10% margin for transients in industrial power rails.
R_DS(on)	1.9 mΩ max at V_GS = 10 V, T_j = 25 °C - enables <1.2 W conduction loss at 25 A, critical for thermally constrained PCB layouts.
I_D cont.	200 A at T_mb = 25 °C - validated under application conditions; actual system limit set by board copper area and thermal interface.
Q_GD	7.6 nC typical - reduces Miller-induced switching delay and improves hard-switching efficiency in 100–500 kHz DC-DC topologies.
trr	33 ns - enables fast reverse recovery in freewheeling paths, minimizing shoot-through risk in half-bridge motor drivers.
R_th(j-mb)	0.69 K/W typical - allows >150 W power dissipation with 105 K ΔT to mounting base, supporting compact heatsink integration.
V_SD	0.8 V typical at I_S = 25 A - lowers forward conduction loss in bidirectional load-switch applications versus standard MOSFET body diodes.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal, single-ended surface-mount package with copper-clip construction and solder die attach, qualified to 175 °C. The exposed mounting base serves as the drain terminal and provides low-inductance, high-current path with visual solder-joint inspection capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source leads reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with 1 Ω typical gate resistance - compatible with standard 5–15 Ω external gate resistors for controlled dv/dt.
Mounting Base	Drain (D)	Exposed copper pad electrically connected to drain; enables direct thermal coupling to heatsink and low-impedance high-current return path.

Key Features

Feature	Design Value
NextPowerS3 Schottky-Plus body diode	Soft recovery (33 ns trr) and 0.8 V V_SD enable efficient bidirectional conduction without external diode in hot-swap and battery protection.
Avalanche ruggedness	100% tested at 180 A I_AS - ensures reliable operation during inductive load turn-off transients in motor drives and solenoid controls.
EMC-optimized layout	Up to 6 dB lower radiated emissions vs. prior-generation MOSFETs - reduces need for ferrite beads and shielding in space-constrained automation modules.
LFPAK56 thermal performance	0.69 K/W R_th(j-mb) - delivers 2.8× higher power density than D2PAK at same footprint, enabling smaller PCB area in DC-DC converter designs.
Wave-solderable leads	Exposed source and gate terminals support automated wave soldering with full joint inspection - improves manufacturing yield in high-volume industrial assembly.

Applications

Brushless DC Motor Control

Battery Isolation

Use Scenario: Three-phase inverter stage in robotic joint actuators requiring 150 A peak phase current and <50 ns switching timing precision.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 60–100 kHz PWM-driven H-bridge, leveraging low Q_G/Q_GD for minimal dead-time uncertainty.

Use Value: 1.9 mΩ R_DS(on) limits conduction loss to <4.3 W per FET at 150 A, while soft body-diode recovery prevents voltage spikes during regenerative braking.

Use Scenario: Bidirectional 48 V battery disconnect switch in autonomous mobile robots with fault-tolerant redundancy requirements.

IC Role / Device Role / Timing Role: Load-switch MOSFET configured back-to-back for reverse-polarity and overcurrent protection, using internal Schottky-Plus diode for forward conduction.

Use Value: 0.8 V V_SD and 33 ns trr reduce forward voltage drop and reverse recovery loss by 40% vs. discrete diode solutions, extending runtime per charge cycle.

Industrial eFuse

Inrush Management

Use Scenario: Programmable 200 A electronic fuse in programmable logic controller (PLC) power distribution modules with fast trip response.

IC Role / Device Role / Timing Role: Main current-handling switch with integrated current sensing via R_DS(on) monitoring, operating in linear mode during fault conditions.

Use Value: Strong SOA rating supports 10 ms linear-mode operation at 100 V × 50 A, enabling precise current limiting without thermal runaway during short-circuit events.

Use Scenario: Controlled 48 V supply ramp-up for server rack power supplies with 150 A inrush current suppression.

IC Role / Device Role / Timing Role: Soft-start switch placed between bulk capacitor bank and upstream DC source, driven by dedicated gate ramp controller.

Use Value: Low 1.9 mΩ on-resistance minimizes steady-state loss during normal operation, while 175 °C rating ensures reliability during repeated hot-swap cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V, 2.6 mΩ R_DS(on), TO-220 package, no Schottky-Plus diode	Lacks soft-recovery body diode; requires external diode for bidirectional conduction	Choose when mechanical mounting constraints favor through-hole packages and EMC is less critical.
Vishay SIHF026N40E	40 V, 2.6 mΩ R_DS(on), D2PAK package, standard body diode (trr ≈ 120 ns)	Higher reverse recovery loss and EMI; larger footprint than LFPAK56	Choose only if existing PCB layout accommodates D2PAK and thermal design permits higher R_th(j-a).

Compared with IPP026N04L and SIHF026N40E, PSMN1R9-40YSBX offers 30% lower R_DS(on), 72% faster trr, and 40% lower Q_GD in a 30% smaller footprint - directly enabling higher efficiency, tighter EMI compliance, and denser power-stage layouts in robotics and industrial automation.

Availability

PSMN1R9-40YSBX is available at Aetrix Electronics and suitable for brushless DC motor control, battery isolation, and industrial eFuse applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN1R9-40YSBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors for power management, logic, and analog applications, serving industrial, automotive, and computing markets with high-volume, high-reliability components.

This device belongs to Nexperia's NextPowerS3 portfolio, engineered specifically for high-efficiency, high-current power switching in space-constrained industrial systems where thermal performance, EMC behavior, and body-diode quality are decisive design factors.

FAQ

What is the maximum continuous drain current rating for PSMN1R9-40YSBX?

The datasheet specifies 200 A continuous drain current at T_mb = 25 °C, validated in application testing. Real-world current capability depends on PCB copper area, thermal interface resistance, and ambient temperature - for example, derating to 162 A at T_mb = 100 °C per Figure 2. This rating assumes proper mounting to a heatsink or thermal pad with low R_{th(mb-ambient)}.

Does PSMN1R9-40YSBX support wave soldering?

Yes - the LFPAK56 package features exposed source and gate leads compatible with wave soldering, as confirmed in Figure 19 of the datasheet. The footprint uses 0.6 mm wide solder lands with 1.27 mm pitch, and the exposed mounting base (drain) remains unsoldered during wave process, preserving electrical isolation until post-assembly thermal interface application.

How is the avalanche rating verified for this MOSFET?

Nexperia performs 100% production testing for unclamped inductive switching at I_AS = 180 A, per conditions in Table 5: V_sup ≤ 40 V, R_GS = 50 Ω, V_GS = 10 V, T_j(init) = 25 °C, tp = 202 µs. Each unit is tested and marked as compliant; no sampling or statistical validation is used.

Can PSMN1R9-40YSBX be used in automotive applications?

No - this device is explicitly designated as non-automotive qualified per Nexperia's legal disclaimers. It lacks AEC-Q101 qualification, automotive-specific reliability testing, and guaranteed PPAP documentation. For automotive use, select Nexperia's automotive-grade variants such as PSMN2R0-40YLC, which undergo extended temperature cycling and HTOL stress screening.

PSMN1R9-40YSBX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6297 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 194W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN1R9-40YSBX FAQ

1.How can I place an order for PSMN1R9-40YSBX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R9-40YSBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R9-40YSBX reliable?

The price and inventory of PSMN1R9-40YSBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R9-40YSBX is usually 5 days.

3.What payment methods are accepted for PSMN1R9-40YSBX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R9-40YSBX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R9-40YSBX?

PSMN1R9-40YSBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R9-40YSBX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R9-40YSBX?

For technical support, including PSMN1R9-40YSBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R9-40YSBX requirements.

6.How does Aetrix verify that PSMN1R9-40YSBX is sourced from the original manufacturer or authorized distributors?

All PSMN1R9-40YSBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R9-40YSBX meets industry standards.

7.What is the process for return or replacement of PSMN1R9-40YSBX?

All PSMN1R9-40YSBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R9-40YSBX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R9-40YSBX part is unused and in its original packaging.

Return procedure for PSMN1R9-40YSBX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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