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Nexperia USA Inc. PSMN1R9-40YSDX
- Part No.:
- PSMN1R9-40YSDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN1R9-40YSDX.pdf
- Description:
- MOSFET N-CH 40V 200A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:932
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Product details
Overview
PSMN1R9-40YSD from Nexperia is an N-channel standard-level MOSFET in LFPAK56 (SOT669) package, rated for 40 V VDS, 1.9 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and 200 A continuous drain current at Tmb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is qualified to 175 °C junction temperature. It is used in high-efficiency server power supplies as a synchronous rectifier switch.
For engineers reviewing the PSMN1R9-40YSD datasheet, PSMN1R9-40YSD pinout, PSMN1R9-40YSD application, or PSMN1R9-40YSD equivalent, key selection criteria include its 0.69 K/W junction-to-mounting-base thermal resistance, 8.2 nC typical QGD, 1.6–1.9 mΩ RDS(on) range, avalanche rating of 180 A IAS, and LFPAK56 package compatibility with wave and reflow soldering.
Technical Context
This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in the LFPAK56 package, enabling low parasitic inductance and high-current capability. Its Schottky-Plus body diode delivers 0.8 V typical VSD at 25 A and 33 ns trr, supporting high-frequency synchronous rectification without external freewheeling diodes.
The device features a 3.6 V maximum gate threshold voltage and -6.3 mV/K temperature coefficient, ensuring stable turn-on behavior across -55 °C to 175 °C. Its 57 nC typical total gate charge and 188 pF typical Crss support efficient switching in DC-DC converters operating up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage in power-switching applications; supports 36 V nominal bus systems with margin. |
| RDS(on) | 1.6–1.9 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1.9 W conduction loss at 100 A, critical for high-current server VRMs. |
| ID (cont) | 200 A @ Tmb = 25 °C - Validated continuous current under optimized PCB thermal design; derates to 162 A at Tmb = 100 °C. |
| QG(tot) | 37–80 nC - Low gate charge enables fast switching with minimal driver power; supports high-frequency (>500 kHz) operation. |
| QGD | 2.5–16 nC - Low Miller charge reduces switching losses and improves EMI performance in hard-switched topologies. |
| VSD | 0.8–1.0 V @ IS = 25 A - Low forward voltage of integrated Schottky-Plus body diode minimizes reverse-conduction loss in synchronous rectification. |
| trr | 33 ns - Fast, soft reverse recovery prevents voltage spikes and ringing during commutation in buck/LLC converters. |
| Rth(j-mb) | 0.69–0.77 K/W - Low junction-to-mounting-base thermal resistance allows direct heatsinking via exposed drain pad for high-power density designs. |
Pinout & Package
LFPAK56 (SOT669) is a 4-terminal surface-mount plastic package with copper-clip construction, qualified to 175 °C. It features an exposed mounting base connected to drain, three source terminals (pins 1–3), and one gate terminal (pin 4). The package supports wave soldering and visual solder-joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel source connections reduce source inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate | Single gate input with 1 Ω typical gate resistance; compatible with standard 10 V gate drivers without level shifting. |
| Mounting Base (mb) | Drain | Exposed copper drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated, 100% tested | 180 A IAS - Ensures robustness against inductive switching transients without external snubbers in motor control or hot-swap circuits. |
| NextPower-S3 Schottky-Plus body diode | 0.8 V VSD, 33 ns trr, soft recovery - Eliminates need for external Schottky diodes in synchronous rectifiers while reducing EMI and layout area. |
| High SOA rating | Linear-mode capable up to 100 A @ 20 V - Supports reliable operation in active current limiting, eFuse, and inrush management without thermal runaway. |
| LFPAK56 package reliability | 175 °C Tj qualification, copper-clip + solder die attach - Delivers >10× longer lifetime vs. standard SO-8 in high-thermal-stress server PSU environments. |
| Low QRR and QG | 27 nC Qr, 57 nC QG(tot) - Reduces switching losses by ≥15% vs. comparable 40 V MOSFETs, directly improving system efficiency in 48 V–12 V DC-DC stages. |
Applications
| High-Performance Synchronous Rectification | Server Power Supply (VRM) |
|---|---|
|
Use Scenario: Secondary-side rectification in 48 V–12 V isolated DC-DC converters for AI accelerators. IC Role / Device Role / Timing Role: N-channel power switch replacing Schottky diodes; driven synchronously with primary-side controller timing. Use Value: 1.9 mΩ RDS(on) cuts conduction loss by >60% vs. 3.5 mΩ alternatives, enabling >96% full-load efficiency at 200 A output. |
Use Scenario: High-current point-of-load (POL) regulation in cloud server motherboards. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter; handles 100+ A per phase with tight thermal coupling to PCB. Use Value: 0.69 K/W Rth(j-mb) enables direct thermal interface to internal copper planes, maintaining Tj < 125 °C at 162 A continuous. |
| Brushless DC Motor Control | Battery Protection & eFuse |
|
Use Scenario: Low-side switching in 24–48 V BLDC inverters for industrial drones and robotics. IC Role / Device Role / Timing Role: Phase-leg switch with fast 13 ns fall time; coordinated with gate driver for precise PWM timing. Use Value: 33 ns trr and soft recovery prevent shoot-through and voltage overshoot during commutation, eliminating need for external RC snubbers. |
Use Scenario: Solid-state eFuse in 48 V battery packs for datacenter UPS systems. IC Role / Device Role / Timing Role: Current-controlled load switch; activated within microseconds upon overcurrent detection. Use Value: Strong SOA rating supports 100 A linear-mode operation for 100 µs, enabling precise current limiting without thermal shutdown during fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N04L | 2.6 mΩ RDS(on), TO-220 package, no Schottky-Plus diode | Higher conduction loss; requires external diode for synchronous rectification | Select when board space permits through-hole mounting and cost sensitivity outweighs efficiency gain. |
| Vishay SI7850DP-T1-GE3 | 2.0 mΩ RDS(on), PowerPAK SO-8, 50 nC QG(tot), no avalanche rating | Lacks 100% IAS test; unsuitable for unclamped inductive loads | Select only in non-avalanche-critical applications like low-cost DC-DC where transient robustness is secondary. |
Compared with IPP026N04L and SI7850DP-T1-GE3, PSMN1R9-40YSD delivers lower RDS(on), integrated soft-recovery diode, and guaranteed avalanche ruggedness-making it uniquely suited for high-reliability, high-efficiency server and motor-control designs where thermal density and fault tolerance are paramount.
Availability
PSMN1R9-40YSD is available at Aetrix Electronics and suitable for high-current synchronous rectification, server VRMs, BLDC motor drives, and battery eFuse applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for PSMN1R9-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced power MOSFETs and automotive-qualified components.
PSMN1R9-40YSD belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and computing infrastructure where thermal performance and switching integrity are critical.
FAQ
What is the maximum continuous drain current for PSMN1R9-40YSD under real-world PCB conditions?
The datasheet specifies 200 A continuous ID at Tmb = 25 °C, but practical current is limited by PCB copper area, thermal vias, and ambient temperature. With a 25.4 mm² copper pad (70 µm thick, FR4), sustained current drops to ~162 A at Tmb = 100 °C. For 200 A operation, multi-layer thermal vias and external heatsinking are required to maintain Tj ≤ 175 °C.
Does PSMN1R9-40YSD require a gate resistor for safe operation in hard-switched topologies?
Yes-a 2.2 Ω to 5.6 Ω gate resistor is recommended to dampen ringing caused by low gate-drain capacitance (Crss = 188 pF typ.) and minimize dv/dt-induced false turn-on. The 1 Ω typical gate resistance (RG) and 8.2 nC QGD make it sensitive to layout parasitics; proper gate routing and local decoupling are essential for stable 500 kHz+ switching.
How does the Schottky-Plus body diode differ from standard MOSFET body diodes in practical use?
The Schottky-Plus diode achieves 0.8 V VSD and 33 ns trr with soft recovery, unlike conventional body diodes that exhibit 1.2–1.8 V VF and abrupt reverse recovery. This eliminates voltage spikes during freewheeling in buck converters, reduces EMI filtering requirements, and avoids cross-conduction in synchronous rectifiers-enabling higher frequency and smaller magnetics.
Can PSMN1R9-40YSD be wave-soldered, and what are the critical footprint requirements?
Yes-the LFPAK56 package is qualified for wave soldering. Critical requirements include 0.6 mm wide solder lands (x4), 1.27 mm pitch, and 1.72–2.1 mm pad length (per Fig. 19). The exposed drain pad must remain unmasked to ensure full wetting; insufficient solder paste volume or misaligned stencil apertures cause voiding and thermal resistance increase >20%.
PSMN1R9-40YSDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6198 pF @ 20 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 194W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN1R9-40YSDX FAQ
1.How can I place an order for PSMN1R9-40YSDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R9-40YSDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R9-40YSDX reliable?
The price and inventory of PSMN1R9-40YSDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R9-40YSDX is usually 5 days.
3.What payment methods are accepted for PSMN1R9-40YSDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R9-40YSDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R9-40YSDX?
PSMN1R9-40YSDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R9-40YSDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R9-40YSDX?
For technical support, including PSMN1R9-40YSDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R9-40YSDX requirements.
6.How does Aetrix verify that PSMN1R9-40YSDX is sourced from the original manufacturer or authorized distributors?
All PSMN1R9-40YSDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R9-40YSDX meets industry standards.
7.What is the process for return or replacement of PSMN1R9-40YSDX?
All PSMN1R9-40YSDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R9-40YSDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R9-40YSDX part is unused and in its original packaging.
Return procedure for PSMN1R9-40YSDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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