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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R9-80SSEJ

Name: PSMN1R9-80SSEJ
Brand: Nexperia USA Inc.
SKU: PSMN1R9-80SSEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R9-80SSEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMN1R9-80SSEJ.pdf

Description:: APPLICATION SPECIFIC POWER MOSFE

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Product details

Overview

PSMN1R9-80SSE from Nexperia is an N-channel 80 V, 1.9 mΩ (typ. at Tj = 25 °C) MOSFET in LFPAK88 (SOT1235) package, qualified to 175 °C junction temperature and optimized for hot-swap, soft-start, and e-fuse applications. It delivers 286 A continuous drain current at Tmb = 25 °C, 340 W total power dissipation, and enhanced SOA for robust linear-mode operation under high inrush currents in 48 V telecom and computing systems.

For engineers reviewing the PSMN1R9-80SSE datasheet, PSMN1R9-80SSE pinout, PSMN1R9-80SSE application, or PSMN1R9-80SSE equivalent, this page provides verified specifications including RDSon vs. temperature, gate charge (QG(tot) = 155 nC typ.), avalanche energy (840 mJ), thermal resistance (Rth(j-mb) = 0.2 K/W typ.), and LFPAK88 mounting-base thermal performance critical for high-current load-switch design.

Technical Context

This MOSFET employs a copper-clip LFPAK88 package with integrated mounting base connected to drain, enabling low-inductance, high-current conduction and superior thermal transfer to PCB copper. Its fully optimized Safe Operating Area supports sustained linear-mode operation during controlled turn-on of high-capacitance loads - essential for hot-swap controllers managing up to 90 A unclamped avalanche events.

The device features a gate threshold voltage of 2.6 V (typ. at Tj = 25 °C), stable over temperature (ΔVGS(th)/ΔT = −6.4 mV/K), and low gate resistance (RG = 1.6 Ω typ.) to support fast, controllable switching with minimal external gate drive loss. Its Crss = 64 pF (typ.) and QGD = 23 nC (typ.) enable predictable Miller-effect behavior in high-dV/dt environments like 48 V backplane systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V max - supports 48 V rail systems with ≥1.6× safety margin against transients
R_DS(on)	1.9 mΩ typ. at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.5 W conduction loss at 250 A
I_D	286 A max at T_mb = 25 °C - rated for high-current load switching with direct board-mount thermal path
E_AS	840 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off stress without failure
Q_G(tot)	155 nC typ. - determines gate driver power requirement and switching speed in hard-switched topologies
R_th(j-mb)	0.2 K/W typ. - enables >300 W power handling with <60 K rise above mounting base temperature
V_GS(th)	2.6 V typ. at T_j = 25 °C - ensures reliable turn-on with standard 3.3 V/5 V logic-level gate drivers

Pinout & Package

LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package with 8 mm × 8 mm × 1.6 mm body, 2 mm pitch, and exposed copper mounting base electrically connected to drain for ultra-low thermal resistance and high-current capability.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - controls channel conduction; requires low-impedance drive due to 155 nC total gate charge
2	S	Source return - common reference node for gate drive and load current sensing
3	S	Source return - paralleled with Pin 2 to reduce source inductance in high-di/dt switching
4	S	Source return - third source connection minimizes parasitic inductance in high-frequency load switching
mb	D	Mounting base (drain) - primary thermal and current path; must be soldered to large copper area for rated power handling

Key Features

Feature	Design Value
Fully optimized SOA	Supports sustained linear-mode operation at 100+ A and 40 V for >100 ms - critical for controlled hot-swap ramp-up
Low R_DS(on)	1.9 mΩ typ. at 25 °C enables <1.2 W conduction loss at 200 A - reduces thermal derating in compact 48 V systems
LFPAK88 copper-clip construction	0.2 K/W typical junction-to-mounting-base thermal resistance - doubles power handling vs. standard SO-8 packages
100% avalanche-tested	Every unit validated for 840 mJ unclamped avalanche energy - guarantees robustness in real-world fault conditions
High-temperature qualification	Rated for continuous operation up to 175 °C junction temperature - suitable for sealed telecom chassis with limited airflow

Applications

Hot Swap

Load Switch

Use Scenario: Insertion of line cards into live 48 V telecom backplanes without disrupting system operation or triggering overcurrent shutdown.

IC Role / Device Role / Timing Role: Main power FET in hot-swap controller circuit, operating in linear mode during controlled voltage ramp-up (10–100 ms).

Use Value: Enhanced SOA allows safe dissipation of >50 W during turn-on while maintaining <1.9 mΩ ON-state resistance for <1 W steady-state loss at full load.

Use Scenario: High-current power domain enable/disable in server VRMs or AI accelerator boards with 200+ A rail requirements.

IC Role / Device Role / Timing Role: Primary load switch FET, driven by dedicated gate controller to manage inrush and steady-state conduction.

Use Value: 286 A rating and 0.2 K/W R_th(j-mb) support >300 W continuous power delivery with minimal board area and no heatsink.

Soft Start

E-fuse

Use Scenario: Gradual energization of large bulk capacitance (≥10,000 µF) in industrial PLC power supplies to limit peak inrush current.

IC Role / Device Role / Timing Role: Linear-mode controlled switch regulating dV/dt across output capacitor bank via gate voltage slew control.

Use Value: Stable R_DS(on) temperature coefficient (−6.4 mV/K) ensures predictable current limiting across −40 °C to +125 °C ambient.

Use Scenario: Overcurrent protection for 48 V battery-powered equipment where mechanical fuses are too slow or unreliable.

IC Role / Device Role / Timing Role: Current-sensing and interrupting element in active e-fuse IC subsystem, responding to faults within microseconds.

Use Value: 1142 A pulsed peak current rating and 840 mJ avalanche energy allow safe interruption of short-circuit events without destructive failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-SOA N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP130N10L2	100 V rating, 1.3 mΩ R_DS(on), TO-220 package, R_th(j-c) = 0.5 K/W	Higher voltage margin but larger footprint and inferior thermal performance; requires heatsink for >100 W	Prefer when 100 V transient immunity is mandatory and board space/thermal budget permits discrete heatsinking.
IRFB4115PBF	150 V rating, 3.1 mΩ R_DS(on), TO-220 package, R_th(j-c) = 0.45 K/W	Lower R_DS(on) temperature stability and higher gate charge (230 nC); less robust SOA in linear mode	Acceptable only for lower-stress soft-start where peak current <150 A and thermal margin is generous.

Compared with IXTP130N10L2 and IRFB4115PBF, PSMN1R9-80SSE offers superior thermal efficiency (0.2 K/W vs. ≥0.45 K/W), smaller footprint (LFPAK88 vs. TO-220), and guaranteed avalanche ruggedness - making it optimal for space-constrained, high-reliability 48 V hot-swap systems requiring zero derating at 175 °C.

Availability

PSMN1R9-80SSE is available at Aetrix Electronics and suitable for hot-swap, load-switch, and e-fuse applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for telecom infrastructure, enterprise servers, and industrial power systems.

Supply support for PSMN1R9-80SSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This part belongs to Nexperia's Application Specific MOSFETs (ASFETs) portfolio, engineered specifically for hot-swap and soft-start functions - emphasizing SOA robustness, low R_DS(on), and thermal performance in copper-clip packages for 48 V infrastructure systems.

FAQ

What is the maximum continuous drain current for PSMN1R9-80SSE at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 202 A (per Table 5, Limiting Values). This reflects thermal derating from the 286 A rating at 25 °C, governed by the normalized power dissipation curve in Figure 1 - critical for thermal design in enclosed telecom chassis with limited airflow.

Does PSMN1R9-80SSE require a gate resistor for safe switching in hot-swap applications?

Yes - a gate resistor (typically 2–10 Ω) is required to control dV/dt and di/dt during linear-mode turn-on. With Q_G(tot) = 155 nC and typical gate driver output impedance, a 5 Ω resistor limits turn-on time to ~1–2 ms, preventing oscillation and ensuring SOA compliance per Figure 3.

How is the mounting base (drain) terminal electrically isolated from the PCB in standard layout?

The mounting base is not isolated - it is the drain terminal and must be connected to the high-side power net. Standard layout uses a solid copper pour tied to the drain net, with thermal vias to inner layers. Electrical isolation is achieved by routing adjacent signals away from the 8 mm × 8 mm thermal pad and maintaining ≥0.5 mm clearance to other nets.

Can PSMN1R9-80SSE be used in parallel configurations for >300 A applications?

Yes - its positive R_DS(on) temperature coefficient (0.0042 Ω/°C at 175 °C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to prevent oscillation; tested designs achieve >500 A with two devices and proper thermal management.

PSMN1R9-80SSEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 286A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 232 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 17140 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 340W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMN1R9-80SSEJ FAQ

1.How can I place an order for PSMN1R9-80SSEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R9-80SSEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R9-80SSEJ reliable?

The price and inventory of PSMN1R9-80SSEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R9-80SSEJ is usually 5 days.

3.What payment methods are accepted for PSMN1R9-80SSEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R9-80SSEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R9-80SSEJ?

PSMN1R9-80SSEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R9-80SSEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R9-80SSEJ?

For technical support, including PSMN1R9-80SSEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R9-80SSEJ requirements.

6.How does Aetrix verify that PSMN1R9-80SSEJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R9-80SSEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R9-80SSEJ meets industry standards.

7.What is the process for return or replacement of PSMN1R9-80SSEJ?

All PSMN1R9-80SSEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R9-80SSEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R9-80SSEJ part is unused and in its original packaging.

Return procedure for PSMN1R9-80SSEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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