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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R0-25MLDX

Name: PSMN2R0-25MLDX
Brand: Nexperia USA Inc.
SKU: PSMN2R0-25MLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R0-25MLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN2R0-25MLDX.pdf

Description:: MOSFET N-CH 25V 70A LFPAK33

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Product details

Overview

PSMN2R0-25MLDX from Nexperia is an N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 25 V V_DS, 2.1 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and optimized for 4.5 V gate drive. It delivers ultra-low gate charge (Q_G(tot) = 18.9 nC), soft-recovery diode (s-factor > 0.9), and 70 A continuous drain current at T_mb = 25 °C - enabling high-efficiency synchronous rectification in telecom POL modules.

For engineers reviewing the PSMN2R0-25MLDX datasheet, PSMN2R0-25MLDX pinout, PSMN2R0-25MLDX application, or PSMN2R0-25MLDX equivalent, key selection criteria include its 1.56 K/W junction-to-mounting-base thermal resistance, SchottkyPlus body diode performance (<1 µA I_DSS at 25 °C), and LFPAK33's exposed leads for solder inspection - critical for high-reliability server DC/DC and VRM designs.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" integration, delivering Schottky-like reverse recovery (t_rr = 26.7 ns, Q_r = 16.3 nC) without elevated leakage. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) and low R_DS(on) temperature coefficient support stable operation across -55 to 175 °C junction range.

The device features ultra-low dynamic parameters: Q_GD = 3.8 nC at 4.5 V drive, C_iss = 2490 pF, and fast switching (t_d(on) = 15.7 ns, t_f = 11.7 ns with 5 Ω external gate resistor). Its clip-bonded die attach and solder die attach eliminate wire bonds and glue, qualifying it for 175 °C continuous operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V maximum - defines safe blocking capability in 12 V and 24 V bus applications.
R_DS(on)	2.1 mΩ typ. at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 70 A.
Q_G(tot)	18.9 nC - reduces gate driver power demand and improves efficiency at >500 kHz switching.
t_rr	26.7 ns - minimizes reverse recovery losses and EMI in hard-switched synchronous rectifiers.
R_th(j-mb)	1.56 K/W typ. - allows 74 W power dissipation with minimal mounting base temperature rise.
V_GS(th)	1.65 V typ. - ensures full enhancement with standard 3.3 V or 4.5 V logic-level drivers.
I_D	70 A continuous at T_mb = 25 °C - supports high-current POL and VRM output stages.

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, lead-frame-based surface-mount package with exposed mounting base connected to drain, three source terminals, and one gate terminal. Its low-inductance layout and solderable exposed leads enable high-current handling and visual solder-joint verification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source connections reduce current density and parasitic inductance in high-di/dt paths.
4	Gate (G)	Single gate input with low RG (0.75 Ω) for precise turn-on/turn-off control and reduced ringing.
Mounting Base	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft-recovery (s-factor > 0.9), t_rr = 26.7 ns, Q_r = 16.3 nC, and <1 µA leakage at 25 °C - eliminates need for external Schottky in secondary-side rectification.
Ultra-low Q_G/Q_GD	Q_G(tot) = 18.9 nC, Q_GD = 3.8 nC at 4.5 V - enables efficient 4.5 V gate drive and reduces switching losses above 1 MHz.
High-temperature reliability	Qualified to 175 °C junction temperature with clip-bonded die and solder die attach - no wire bonds or organic adhesives to degrade.
Optimized for POL/VRM	R_DS(on) = 2.5 mΩ at V_GS = 4.5 V and T_j = 25 °C - ensures low conduction loss under typical point-of-load gate drive conditions.

Applications

Server On-Board DC/DC

Telecom Secondary-Side SR

Use Scenario: High-density 48 V to 12 V intermediate bus conversion in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in multiphase buck converters.

Use Value: 2.1 mΩ R_DS(on) and 1.56 K/W R_th(j-mb) enable >95% efficiency at 500 kHz while maintaining T_j < 125 °C under full load.

Use Scenario: Secondary-side synchronous rectification in telecom AC/DC front-end and isolated DC/DC modules.

IC Role / Device Role / Timing Role: Low-V_DS rectifying switch replacing Schottky diodes in forward or LLC topologies.

Use Value: SchottkyPlus diode behavior (t_rr = 26.7 ns, Q_r = 16.3 nC) cuts recovery losses by >60% versus standard MOSFETs, reducing heatsink size.

GPU/V-Core Power Delivery

Brushless Motor Control

Use Scenario: Point-of-load regulation for GPU, ASIC, and DDR memory rails requiring <1 mΩ effective on-resistance.

IC Role / Device Role / Timing Role: Bottom-side FET in high-frequency (1–2 MHz) multiphase buck converters with 3.3 V or 4.5 V gate drive.

Use Value: V_GS(th) = 1.65 V and R_DS(on) = 2.5 mΩ at 4.5 V allow full enhancement with low-voltage controllers, minimizing dropout and thermal stress.

Use Scenario: Half-bridge or 3-phase inverter stage in compact BLDC motor drives for cooling fans and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling repetitive 50–200 A peak currents with fast PWM commutation.

Use Value: 555 A pulsed drain current rating and soft-recovery diode suppress voltage spikes during freewheeling, improving EMC and MOSFET lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R3-25YLH	Higher R_DS(on) (3.3 mΩ @ 10 V), lower Q_G (15.2 nC), same LFPAK33 package.	Better suited for space-constrained 4.5 V-driven apps where gate drive strength is limited but moderate conduction loss is acceptable.	Select when prioritizing gate drive simplicity over absolute conduction efficiency.
IRLHS6342TRPBF	Similar R_DS(on) (2.2 mΩ @ 4.5 V), higher Q_G (25.5 nC), SO-8 package with higher R_th(j-a) (57 K/W).	Acceptable for lower-power POLs but unsuitable for >30 A continuous due to thermal limitations and lack of SchottkyPlus diode.	Choose only if legacy SO-8 footprint compatibility is mandatory and switching frequency remains below 300 kHz.

Compared with PSMN3R3-25YLH, the PSMN2R0-25MLDX offers 39% lower conduction loss at 70 A but requires slightly stronger gate drive; versus IRLHS6342TRPBF, it delivers 3× better thermal performance and integrated soft-recovery - making it superior for high-current, high-frequency telecom and server power stages.

Availability

PSMN2R0-25MLDX is available at Aetrix Electronics and suitable for server DC/DC, telecom POL modules, and GPU power delivery requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN2R0-25MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and computing markets.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center and telecom infrastructure where low R_DS(on), fast switching, and robust thermal performance are critical.

FAQ

What is the maximum continuous drain current for PSMN2R0-25MLDX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 70 A - identical to the 25 °C rating - because the device's current limit is capped by package constraints (not thermal derating) per Figure 2 of the datasheet. This reflects the LFPAK33's superior thermal design.

Does PSMN2R0-25MLDX have avalanche energy rating, and what is its value?

Yes, it is 100% tested for non-repetitive drain-source avalanche ruggedness, with E_AS = 361 mJ under specified conditions (I_D = 25 A, V_sup ≤ 25 V, R_GS = 50 Ω, V_GS = 10 V, T_j(init) = 25 °C, unclamped, t_p = 0.89 ms). This rating supports robustness in inductive switching circuits.

How does the "SchottkyPlus" technology differ from a standard MOSFET body diode?

SchottkyPlus provides soft reverse recovery (s-factor > 0.9), t_rr = 26.7 ns, and Q_r = 16.3 nC - matching Schottky diode performance - while maintaining ultra-low leakage (<1 µA at 25 °C), unlike integrated Schottky MOSFETs which suffer from high I_DSS. No external diode is needed.

Is PSMN2R0-25MLDX qualified for automotive applications?

No. The datasheet explicitly states this is a non-automotive qualified product. It is not tested to AEC-Q101, lacks automotive-specific qualification reports, and carries no automotive grade marking. Use in automotive systems requires formal validation by the customer and voids Nexperia's standard warranty.

PSMN2R0-25MLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 34.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2490 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN2R0-25MLDX FAQ

1.How can I place an order for PSMN2R0-25MLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R0-25MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R0-25MLDX reliable?

The price and inventory of PSMN2R0-25MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-25MLDX is usually 5 days.

3.What payment methods are accepted for PSMN2R0-25MLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-25MLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R0-25MLDX?

PSMN2R0-25MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R0-25MLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R0-25MLDX?

For technical support, including PSMN2R0-25MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-25MLDX requirements.

6.How does Aetrix verify that PSMN2R0-25MLDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R0-25MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-25MLDX meets industry standards.

7.What is the process for return or replacement of PSMN2R0-25MLDX?

All PSMN2R0-25MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-25MLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R0-25MLDX part is unused and in its original packaging.

Return procedure for PSMN2R0-25MLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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