Nexperia USA Inc. PSMN2R0-25YLDX

Overview

PSMN2R0-25YLD from Nexperia is an N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 25 V V_DS, 2.09 mΩ R_DS(on) at V_GS = 10 V and 25 A, 179 A continuous drain current at T_mb = 25 °C, and optimized for 4.5 V gate drive. It serves as a high-efficiency synchronous rectifier or power switch in high-frequency DC/DC converters for server and telecom infrastructure.

For engineers reviewing the PSMN2R0-25YLD datasheet, PSMN2R0-25YLD pinout, PSMN2R0-25YLD application, or PSMN2R0-25YLD equivalent, key selection criteria include its SchottkyPlus diode performance (1 µA leakage at 25 °C), ultra-low Q_G (15.2 nC) and Q_GD (3.6 nC), 1.09 K/W junction-to-mounting-base thermal resistance, and avalanche ruggedness (118 A I_AS).

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-delivering soft-recovery diode behavior (S = 1, t_rr = 26 ns, Q_r = 16.8 nC) without elevated reverse leakage. Its gate threshold voltage is 1.68 V (typ), with -4.5 mV/K temperature coefficient, enabling stable operation from -55 °C to 175 °C junction temperature.

The device uses clip-bonded, solder die attach in a wave-solderable LFPAK56 package-eliminating wire bonds and adhesive-achieving low parasitic inductance and resistance. Mounting base (drain-connected) enables direct thermal coupling to PCB copper, supporting >115 W total power dissipation at T_mb = 25 °C.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal, single-ended surface-mount plastic package with exposed mounting base (drain-connected). It features clip-bonded die, solder die attach, no wire bonds or glue, and is qualified to 175 °C junction temperature. Leads are wave-solderable with visual inspection capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BSC020N03LS and SiR626DP, PSMN2R0-25YLD delivers superior thermal performance via its drain-connected mounting base, lower Q_GD for cleaner switching, and SchottkyPlus diode behavior-making it optimal for compact, high-frequency, high-current POL and telecom rectification where thermal density and EMI are critical.

Availability

PSMN2R0-25YLD is available at Aetrix Electronics and suitable for server DC/DC conversion, telecom secondary-side rectification, and GPU power delivery requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for PSMN2R0-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including MOSFETs, logic, diodes, and ESD protection - with manufacturing rooted in process discipline and automotive-grade quality systems.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and computing infrastructure where low conduction/switching loss and thermal density are decisive.

FAQ

Is PSMN2R0-25YLD suitable for 3.3 V gate drive?

No - while its V_GS(th) is 1.68 V (typ), R_DS(on) rises sharply below 4.5 V: 2.41 mΩ at V_GS = 4.5 V vs. 4.95 mΩ at 175 °C. Full enhancement and low-loss operation require ≥4.5 V gate drive per datasheet Fig. 8 and Fig. 10.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Fig. 2, the continuous drain current is derated to 127 A at T_mb = 100 °C. This value is validated under test conditions and assumes adequate PCB copper area (e.g., 1"² 2 oz Cu per Fig. 5) for thermal conduction.

Does the mounting base require electrical isolation from the PCB?

Yes - the mounting base is internally connected to the drain terminal (Table 2), so it must be routed on a dedicated drain net and thermally coupled to a non-grounded copper pour. Isolation is mandatory if the drain node is not at system ground potential.

How does the SchottkyPlus diode compare to a discrete Schottky in reverse recovery?

It matches Schottky-like soft recovery (S = 1, t_rr = 26 ns, Q_r = 16.8 nC) but with <1 µA leakage at 25 °C - versus typical Schottky leakage of 10–100 µA. This eliminates thermal runaway risk in high-temperature POL applications while retaining low-loss commutation.