Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PSMN2R0-30BL,118

Part No.:
PSMN2R0-30BL,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixPSMN2R0-30BL,118.pdf
Description:
MOSFET N-CH 30V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,631

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PSMN2R0-30BL from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V VDS, 2.1 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at Tmb = 25 °C and supports high-efficiency load switching in server power supplies and motor control circuits.

For engineers reviewing the PSMN2R0-30BL datasheet, PSMN2R0-30BL pinout, PSMN2R0-30BL application, or PSMN2R0-30BL equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, avalanche ruggedness (555 mJ), thermal resistance (Rth(j-mb) = 0.41 K/W typ), and D2PAK mounting-base thermal interface for high-power industrial switching.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching with logic-level gate compatibility (VGS(th) = 1.3–2.15 V). Its RDS(on) remains stable across −55 °C to 175 °C, and it features an integrated source-drain diode with 49 ns reverse recovery time and 66 nC recovered charge.

The device operates within IEC 60134 absolute maximum ratings: 30 V VDS, ±20 V VGS, and 943 A peak pulsed drain current. Thermal design leverages the mounting base (connected to drain) for direct heatsink coupling, enabling high-current DC-to-DC converter stages without external thermal vias.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum blocking voltage before avalanche; defines use in ≤30 V bus systems like 24 V server rails.
RDS(on) @ VGS = 10 V, Tj = 25 °C 1.79–2.1 mΩ - Enables <1.1 W conduction loss at 50 A, critical for high-efficiency synchronous rectification.
RDS(on) @ VGS = 4.5 V, Tj = 25 °C 2.47–2.9 mΩ - Confirmed logic-level operation; compatible with 3.3 V/5 V microcontroller GPIOs without level-shifting.
QG(tot) 55–117 nC - Gate charge range determines driver strength requirement; 55 nC at 4.5 V enables low-power gate driving.
EAS 555 mJ - Non-repetitive avalanche energy rating supports robustness against inductive turn-off transients in motor drives.
Rth(j-mb) 0.41–0.71 K/W - Low junction-to-mounting-base thermal resistance allows >150 W dissipation with moderate heatsink contact.
ID continuous @ Tmb = 25 °C 100 A - Limited by D2PAK package thermal capacity; requires mechanical mounting to heatsink for sustained operation.

Pinout & Package

D2PAK (SOT404) package with isolated mounting base electrically connected to drain terminal; designed for surface-mount assembly with screw-down heatsink interface.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control input; threshold voltage 1.3–2.15 V enables direct drive from 3.3 V logic; gate resistance 0.78 Ω affects switching speed.
2 (D) Drain Main high-side switching node; internally bonded to mounting base for low-inductance, low-thermal-resistance heatsinking.
3 (S) Source Power return path; referenced to system ground in low-side configurations; source-drain diode VSD = 0.76–1.2 V at 25 A.

Key Features

Feature Design Value
Logic-level gate drive compatibility Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate drivers in 3.3 V/5 V MCU-based load switches.
High-temperature qualification Rated for continuous operation up to Tj = 175 °C, supporting industrial environments and compact thermal designs.
Low RDS(on) at elevated temperature RDS(on) = 3.4–4.0 mΩ at Tj = 175 °C ensures predictable conduction loss in thermally constrained applications.
Integrated avalanche ruggedness 555 mJ EAS rating provides margin against unclamped inductive switching stress without external snubbers.
Optimized for high-current PCB mounting Mounting base (drain-connected) enables direct thermal interface to heatsink, reducing thermal impedance by >80% vs. standard SO-8.

Applications

Server Power Supply Industrial Motor Control

Use Scenario: High-current 12 V/24 V output stage in ATX or OCP-compliant server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter output stage, operating at 300–600 kHz.

Use Value: 2.1 mΩ RDS(on) minimizes conduction loss under 80–100 A load, improving efficiency by ≥1.2% over 3.5 mΩ alternatives.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlled by PWM signal from industrial PLC I/O module.

Use Value: Logic-level gate enables direct 5 V PWM drive; 175 °C rating sustains operation during extended stall conditions.

DC-DC Converter Load Switching

Use Scenario: Input-side hot-swap protection and inrush limiting in telecom power distribution units.

IC Role / Device Role / Timing Role: High-side load switch with controlled turn-on via gate resistor network.

Use Value: 100 A continuous rating supports 2 kW input rails; low QGD (16 nC) reduces Miller-induced shoot-through risk.

Use Scenario: Power sequencing for FPGA core voltage (1.2 V) and auxiliary rails in embedded computing modules.

IC Role / Device Role / Timing Role: Single-pole, single-throw electronic fuse with current sensing feedback path.

Use Value: Mounting base thermal path enables rapid heat dissipation during 500 ms overload events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF1404PBF Higher RDS(on) (4.7 mΩ @ 10 V), TO-220 package, no mounting base thermal interface. Limited to ≤60 A continuous due to higher thermal resistance; unsuitable for D2PAK-replacement in space-constrained server boards. Select only if legacy TO-220 footprint required and thermal budget permits 2× conduction loss.
STL220N3LLH6 Lower voltage rating (25 V), same D2PAK package, RDS(on) = 1.8 mΩ @ 4.5 V, but lower avalanche rating (320 mJ). Better suited for 12 V automotive body electronics; insufficient for 24 V industrial motor control with inductive kickback. Prefer for 12 V logic-level applications where avalanche margin is secondary to gate-drive sensitivity.

Compared with IRF1404PBF and STL220N3LLH6, PSMN2R0-30BL uniquely balances 30 V rating, 2.1 mΩ on-resistance at 4.5 V, 555 mJ avalanche energy, and D2PAK thermal interface-making it optimal for high-current, high-temperature industrial DC-DC and motor control where thermal management and transient robustness are co-critical.

Availability

PSMN2R0-30BL is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, DC-DC converters, and high-current load switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN2R0-30BL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.

This part belongs to Nexperia's "TrenchMOS Logic Level" product line, engineered specifically for high-efficiency, high-temperature switching in industrial power conversion and motor drive systems where gate-drive simplicity and thermal resilience are essential.

FAQ

Is PSMN2R0-30BL suitable for high-frequency switching above 500 kHz?

Yes, its 55 nC total gate charge at 4.5 V and 16 nC gate-drain charge enable efficient operation up to 1 MHz in hard-switched topologies. However, switching losses increase significantly above 600 kHz due to Ciss = 6810 pF; layout optimization and gate driver slew rate control are essential for stable performance.

What is the maximum safe operating area (SOA) at 100 °C case temperature?

At Tmb = 100 °C, the device supports 100 A continuous drain current per Figure 1, but SOA is limited by RDS(on) heating and thermal runaway. For pulse operation, Figure 3 shows 100 A is sustainable for ≤10 ms at VDS = 15 V; longer pulses require active thermal monitoring.

Can the mounting base be electrically isolated from the heatsink?

No-the mounting base is internally connected to the drain terminal (Pin 2) and must be either directly bolted to a grounded heatsink (for low-side configuration) or insulated using a thermally conductive but electrically isolating pad (e.g., silicone grease + ceramic washer) in high-side applications to prevent short circuits.

Does PSMN2R0-30BL have built-in ESD protection?

It meets HBM ESD rating of ±2 kV per JEDEC JESD22-A114 (inferred from Nexperia's standard TrenchMOS qualification), but no dedicated on-chip ESD clamp diodes are specified. External TVS protection is recommended for gate inputs in noisy industrial environments per Figure 14 gate-charge waveform integrity requirements.

PSMN2R0-30BL,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
117 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6810 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
211W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

PSMN2R0-30BL,118 FAQ

1.How can I place an order for PSMN2R0-30BL,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R0-30BL,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R0-30BL,118 reliable?

The price and inventory of PSMN2R0-30BL,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-30BL,118 is usually 5 days.

3.What payment methods are accepted for PSMN2R0-30BL,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-30BL,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R0-30BL,118?

PSMN2R0-30BL,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R0-30BL,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R0-30BL,118?

For technical support, including PSMN2R0-30BL,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-30BL,118 requirements.

6.How does Aetrix verify that PSMN2R0-30BL,118 is sourced from the original manufacturer or authorized distributors?

All PSMN2R0-30BL,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-30BL,118 meets industry standards.

7.What is the process for return or replacement of PSMN2R0-30BL,118?

All PSMN2R0-30BL,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-30BL,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R0-30BL,118 part is unused and in its original packaging.

Return procedure for PSMN2R0-30BL,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN2R0-30BL,118 Tags

  • PSMN2R0-30BL,118
  • PSMN2R0-30BL,118 PDF
  • PSMN2R0-30BL,118 Datasheet
  • PSMN2R0-30BL,118 Specifications
  • PSMN2R0-30BL,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PSMN2R0-30BL,118
  • Buy PSMN2R0-30BL,118
  • PSMN2R0-30BL,118 Price
  • PSMN2R0-30BL,118 Distributor
  • PSMN2R0-30BL,118 Supplier
  • PSMN2R0-30BL,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER