Nexperia USA Inc. PSMN2R0-30BL,118
- Part No.:
- PSMN2R0-30BL,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PSMN2R0-30BL,118.pdf
- Description:
- MOSFET N-CH 30V 100A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,631
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Product details
Overview
PSMN2R0-30BL from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V VDS, 2.1 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at Tmb = 25 °C and supports high-efficiency load switching in server power supplies and motor control circuits.
For engineers reviewing the PSMN2R0-30BL datasheet, PSMN2R0-30BL pinout, PSMN2R0-30BL application, or PSMN2R0-30BL equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, avalanche ruggedness (555 mJ), thermal resistance (Rth(j-mb) = 0.41 K/W typ), and D2PAK mounting-base thermal interface for high-power industrial switching.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching with logic-level gate compatibility (VGS(th) = 1.3–2.15 V). Its RDS(on) remains stable across −55 °C to 175 °C, and it features an integrated source-drain diode with 49 ns reverse recovery time and 66 nC recovered charge.
The device operates within IEC 60134 absolute maximum ratings: 30 V VDS, ±20 V VGS, and 943 A peak pulsed drain current. Thermal design leverages the mounting base (connected to drain) for direct heatsink coupling, enabling high-current DC-to-DC converter stages without external thermal vias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage before avalanche; defines use in ≤30 V bus systems like 24 V server rails. |
| RDS(on) @ VGS = 10 V, Tj = 25 °C | 1.79–2.1 mΩ - Enables <1.1 W conduction loss at 50 A, critical for high-efficiency synchronous rectification. |
| RDS(on) @ VGS = 4.5 V, Tj = 25 °C | 2.47–2.9 mΩ - Confirmed logic-level operation; compatible with 3.3 V/5 V microcontroller GPIOs without level-shifting. |
| QG(tot) | 55–117 nC - Gate charge range determines driver strength requirement; 55 nC at 4.5 V enables low-power gate driving. |
| EAS | 555 mJ - Non-repetitive avalanche energy rating supports robustness against inductive turn-off transients in motor drives. |
| Rth(j-mb) | 0.41–0.71 K/W - Low junction-to-mounting-base thermal resistance allows >150 W dissipation with moderate heatsink contact. |
| ID continuous @ Tmb = 25 °C | 100 A - Limited by D2PAK package thermal capacity; requires mechanical mounting to heatsink for sustained operation. |
Pinout & Package
D2PAK (SOT404) package with isolated mounting base electrically connected to drain terminal; designed for surface-mount assembly with screw-down heatsink interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; threshold voltage 1.3–2.15 V enables direct drive from 3.3 V logic; gate resistance 0.78 Ω affects switching speed. |
| 2 (D) | Drain | Main high-side switching node; internally bonded to mounting base for low-inductance, low-thermal-resistance heatsinking. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side configurations; source-drain diode VSD = 0.76–1.2 V at 25 A. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate drivers in 3.3 V/5 V MCU-based load switches. |
| High-temperature qualification | Rated for continuous operation up to Tj = 175 °C, supporting industrial environments and compact thermal designs. |
| Low RDS(on) at elevated temperature | RDS(on) = 3.4–4.0 mΩ at Tj = 175 °C ensures predictable conduction loss in thermally constrained applications. |
| Integrated avalanche ruggedness | 555 mJ EAS rating provides margin against unclamped inductive switching stress without external snubbers. |
| Optimized for high-current PCB mounting | Mounting base (drain-connected) enables direct thermal interface to heatsink, reducing thermal impedance by >80% vs. standard SO-8. |
Applications
| Server Power Supply | Industrial Motor Control |
|---|---|
Use Scenario: High-current 12 V/24 V output stage in ATX or OCP-compliant server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter output stage, operating at 300–600 kHz. Use Value: 2.1 mΩ RDS(on) minimizes conduction loss under 80–100 A load, improving efficiency by ≥1.2% over 3.5 mΩ alternatives. |
Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element controlled by PWM signal from industrial PLC I/O module. Use Value: Logic-level gate enables direct 5 V PWM drive; 175 °C rating sustains operation during extended stall conditions. |
| DC-DC Converter | Load Switching |
Use Scenario: Input-side hot-swap protection and inrush limiting in telecom power distribution units. IC Role / Device Role / Timing Role: High-side load switch with controlled turn-on via gate resistor network. Use Value: 100 A continuous rating supports 2 kW input rails; low QGD (16 nC) reduces Miller-induced shoot-through risk. |
Use Scenario: Power sequencing for FPGA core voltage (1.2 V) and auxiliary rails in embedded computing modules. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic fuse with current sensing feedback path. Use Value: Mounting base thermal path enables rapid heat dissipation during 500 ms overload events without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | Higher RDS(on) (4.7 mΩ @ 10 V), TO-220 package, no mounting base thermal interface. | Limited to ≤60 A continuous due to higher thermal resistance; unsuitable for D2PAK-replacement in space-constrained server boards. | Select only if legacy TO-220 footprint required and thermal budget permits 2× conduction loss. |
| STL220N3LLH6 | Lower voltage rating (25 V), same D2PAK package, RDS(on) = 1.8 mΩ @ 4.5 V, but lower avalanche rating (320 mJ). | Better suited for 12 V automotive body electronics; insufficient for 24 V industrial motor control with inductive kickback. | Prefer for 12 V logic-level applications where avalanche margin is secondary to gate-drive sensitivity. |
Compared with IRF1404PBF and STL220N3LLH6, PSMN2R0-30BL uniquely balances 30 V rating, 2.1 mΩ on-resistance at 4.5 V, 555 mJ avalanche energy, and D2PAK thermal interface-making it optimal for high-current, high-temperature industrial DC-DC and motor control where thermal management and transient robustness are co-critical.
Availability
PSMN2R0-30BL is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, DC-DC converters, and high-current load switching requiring stable component supply and long-term industrial lifecycle support.
Supply support for PSMN2R0-30BL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.
This part belongs to Nexperia's "TrenchMOS Logic Level" product line, engineered specifically for high-efficiency, high-temperature switching in industrial power conversion and motor drive systems where gate-drive simplicity and thermal resilience are essential.
FAQ
Is PSMN2R0-30BL suitable for high-frequency switching above 500 kHz?
Yes, its 55 nC total gate charge at 4.5 V and 16 nC gate-drain charge enable efficient operation up to 1 MHz in hard-switched topologies. However, switching losses increase significantly above 600 kHz due to Ciss = 6810 pF; layout optimization and gate driver slew rate control are essential for stable performance.
What is the maximum safe operating area (SOA) at 100 °C case temperature?
At Tmb = 100 °C, the device supports 100 A continuous drain current per Figure 1, but SOA is limited by RDS(on) heating and thermal runaway. For pulse operation, Figure 3 shows 100 A is sustainable for ≤10 ms at VDS = 15 V; longer pulses require active thermal monitoring.
Can the mounting base be electrically isolated from the heatsink?
No-the mounting base is internally connected to the drain terminal (Pin 2) and must be either directly bolted to a grounded heatsink (for low-side configuration) or insulated using a thermally conductive but electrically isolating pad (e.g., silicone grease + ceramic washer) in high-side applications to prevent short circuits.
Does PSMN2R0-30BL have built-in ESD protection?
It meets HBM ESD rating of ±2 kV per JEDEC JESD22-A114 (inferred from Nexperia's standard TrenchMOS qualification), but no dedicated on-chip ESD clamp diodes are specified. External TVS protection is recommended for gate inputs in noisy industrial environments per Figure 14 gate-charge waveform integrity requirements.
PSMN2R0-30BL,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 117 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6810 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 211W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PSMN2R0-30BL,118 FAQ
1.How can I place an order for PSMN2R0-30BL,118 through Aetrix?
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6.How does Aetrix verify that PSMN2R0-30BL,118 is sourced from the original manufacturer or authorized distributors?
All PSMN2R0-30BL,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-30BL,118 meets industry standards.
7.What is the process for return or replacement of PSMN2R0-30BL,118?
All PSMN2R0-30BL,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-30BL,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN2R0-30BL,118 part is unused and in its original packaging.
Return procedure for PSMN2R0-30BL,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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