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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R0-30YL,115

Name: PSMN2R0-30YL,115
Brand: Nexperia USA Inc.
SKU: PSMN2R0-30YL,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R0-30YL,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R0-30YL,115.pdf

Description:: MOSFET N-CH 30V 100A LFPAK56

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Product details

Overview

PSMN2R0-30YL from Nexperia is a logic-level N-channel enhancement-mode TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V drain-source voltage, 2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and optimized for high-efficiency switching in industrial DC-DC converters and motor control stages.

For engineers reviewing the PSMN2R0-30YL datasheet, PSMN2R0-30YL pinout, PSMN2R0-30YL application, or PSMN2R0-30YL equivalent, this device supports logic-level gate drive (V_GS(th) = 1.3–2.15 V), delivers low conduction loss (R_DS(on) ≤ 3.3 mΩ up to 150 °C), and integrates avalanche ruggedness (E_AS = 151 mJ) for robust operation in unclamped inductive switching.

Technical Context

This MOSFET employs TrenchMOS technology to achieve ultra-low R_DS(on) while maintaining fast switching performance: Q_GD = 7.5 nC and Q_G(tot) = 30 nC at V_GS = 4.5 V, enabling efficient operation in high-frequency synchronous rectification and Class-D amplifier output stages.

Its thermal design centers on low junction-to-mounting-base resistance (R_th(j-mb) typ. 0.4 K/W), direct metal mounting base connection to drain, and SOT669 package geometry that supports >97 W power dissipation at T_mb = 25 °C - critical for thermally constrained server PSU and motor driver PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe operating voltage ceiling in 24 V industrial bus and 12 V/24 V motor control applications.
R_DS(on)	1.55–2 mΩ at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <1.5 W conduction loss at 50 A, reducing heatsink requirements.
I_D (cont)	100 A at T_mb = 25 °C - supports high-current half-bridge legs without parallel devices in compact DC-DC modules.
Q_G(tot)	30 nC at V_GS = 4.5 V - ensures full turn-on with standard logic-level drivers (e.g., microcontroller GPIO or dedicated gate drivers like UCC27531).
E_AS	151 mJ unclamped avalanche energy - sustains single-pulse inductive kickback in motor freewheeling and relay driving without failure.
R_th(j-mb)	0.4 K/W typical - allows direct thermal coupling to copper pour or heatsink, achieving T_j rise of only ~40 °C at 50 W dissipation.
V_GS(th)	1.3–2.15 V at I_D = 1 mA - guarantees reliable turn-on with 3.3 V or 5 V logic sources without level-shifting circuitry.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain; optimized for high-current, low-inductance PCB layout and thermal transfer via bottom-side copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and resistive drop in high-di/dt switching paths.
4	Gate (G)	Single gate input with low RG (0.75–1.5 Ω) - minimizes gate ringing and enables clean edge control at >1 MHz.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heat extraction surface.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) range (1.3–2.15 V) ensures full enhancement with 3.3 V MCU outputs, eliminating need for gate driver ICs in cost-sensitive designs.
TrenchMOS low R_DS(on)	1.55 mΩ typical at 25 °C enables <0.8 W conduction loss at 20 A - critical for efficiency-critical server power supplies meeting 80 PLUS Titanium.
High avalanche ruggedness	151 mJ E_AS rating allows safe operation in unclamped inductive loads (e.g., brushed DC motor commutation) without external snubbers.
Low Q_GD/Q_G ratio	7.5 nC Q_GD / 30 nC Q_G(tot) = 0.25 - improves Miller immunity and reduces risk of false turn-on during high dv/dt switching in half-bridge configurations.
Thermally enhanced LFPAK	R_th(j-mb) = 0.4 K/W enables >90% of junction heat to exit directly through mounting base - simplifies thermal design versus SO-8 or DPAK alternatives.

Applications

Class-D Audio Amplifier Output Stage

Server DC-DC Converter Primary Switch

Use Scenario: High-efficiency audio output stage in 50–200 W rack-mount amplifiers, switching at 300–500 kHz with PWM modulation.

IC Role / Device Role / Timing Role: N-channel power switch in half-bridge topology; handles peak currents >80 A with minimal dead-time distortion.

Use Value: Low R_DS(on) and fast Q_GD minimize THD+N and thermal derating, enabling compact heatsinks and fanless operation.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V intermediate bus converter for AI server GPUs.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck regulator; operates at 400–800 kHz with 50 ns dead time.

Use Value: 2 mΩ R_DS(on) and 30 nC Q_G enable >95% efficiency at 60 A load, reducing system power loss by 3.2 W vs. comparable SO-8 MOSFET.

Industrial Brushed DC Motor Driver

Telecom Power Supply OR-ing Circuit

Use Scenario: H-bridge driver for 24 V, 15 A industrial actuators with regenerative braking and PWM speed control.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current; conducts reverse recovery current during freewheeling.

Use Value: Integrated body diode with 43 ns t_rr and 49 nC Q_r minimizes switching loss during commutation, improving torque linearity.

Use Scenario: OR-ing FET in redundant 48 V telecom rectifier modules, replacing Schottky diodes to reduce forward drop.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with reverse polarity protection.

Use Value: 2 mΩ R_DS(on) cuts conduction loss to 1.8 mW/A² - saving 1.1 W per 25 A branch vs. 40 mV Schottky, extending module MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.0 mΩ @ 10 V; TO-220 package; higher R_th(j-c) = 1.2 K/W; no integrated mounting base.	Requires bolt-down heatsink; unsuitable for ultra-thin server modules due to height and thermal interface complexity.	Choose when legacy TO-220 footprint is mandatory and board space permits larger thermal solution.
DMT3006LPS-13	R_DS(on) = 2.2 mΩ @ 10 V; PowerDI5060 package; Q_G(tot) = 22 nC @ 4.5 V; lower E_AS = 75 mJ.	Limited avalanche capability restricts use in motor freewheeling; smaller footprint but less thermal margin at >75 W.	Prefer for space-constrained telecom OR-ing where avalanche stress is absent and gate drive strength is limited.

Compared with IRL3803PbF and DMT3006LPS-13, PSMN2R0-30YL uniquely combines sub-2 mΩ R_DS(on), 151 mJ avalanche rating, and LFPAK's 0.4 K/W thermal resistance - making it optimal for high-reliability, high-power-density industrial and server applications demanding both electrical and thermal robustness.

Availability

PSMN2R0-30YL is available at Aetrix Electronics and suitable for industrial motor control, server DC-DC conversion, and Class-D audio amplifier designs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for PSMN2R0-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in thermally constrained industrial and communications infrastructure equipment.

FAQ

What is the maximum continuous drain current for PSMN2R0-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 55 A, based on Figure 1 in the datasheet. This reflects thermal limitation of the LFPAK package rather than silicon capability, and assumes adequate PCB copper area for heat spreading.

Can PSMN2R0-30YL be used in a high-side configuration with 3.3 V gate drive?

No - as an N-channel MOSFET, it requires gate voltage above source potential. In high-side configuration, a bootstrap or isolated gate driver is needed to elevate V_GS to ≥4.5 V. Its logic-level threshold does not eliminate the need for level-shifting in high-side topologies.

Is the mounting base electrically isolated from other terminals?

No - the mounting base is internally connected to the drain terminal (pin mb = D), as confirmed in Table 2 and Figure 18. It must be routed to drain potential on the PCB and thermally coupled to a heatsink or copper plane at same potential.

What is the typical reverse recovery charge (Q_r) of the integrated body diode?

The typical reverse recovery charge is 49 nC, measured at I_S = 20 A, dI_S/dt = −100 A/µs, V_DS = 20 V, and V_GS = 0 V (Table 6). This value enables accurate loss calculation in synchronous rectifier and freewheeling applications.

PSMN2R0-30YL,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3980 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 97W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R0-30YL,115 FAQ

1.How can I place an order for PSMN2R0-30YL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R0-30YL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R0-30YL,115 reliable?

The price and inventory of PSMN2R0-30YL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-30YL,115 is usually 5 days.

3.What payment methods are accepted for PSMN2R0-30YL,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-30YL,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R0-30YL,115?

PSMN2R0-30YL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R0-30YL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R0-30YL,115?

For technical support, including PSMN2R0-30YL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-30YL,115 requirements.

6.How does Aetrix verify that PSMN2R0-30YL,115 is sourced from the original manufacturer or authorized distributors?

All PSMN2R0-30YL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-30YL,115 meets industry standards.

7.What is the process for return or replacement of PSMN2R0-30YL,115?

All PSMN2R0-30YL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-30YL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R0-30YL,115 part is unused and in its original packaging.

Return procedure for PSMN2R0-30YL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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