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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R0-30YLD/2X

Name: PSMN2R0-30YLD/2X
Brand: Nexperia USA Inc.
SKU: PSMN2R0-30YLD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R0-30YLD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R0-30YLD/2X.pdf

Description:: PSMN2R0-30YLD/SOT669/LFPAK

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Product details

Overview

PSMN2R0-30YLD from Nexperia is an N-channel 30 V, 2.0 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, engineered for high-efficiency synchronous rectification and DC-DC conversion. It delivers 100 A continuous drain current at T_mb = 25 °C, features ultra-low Q_G (21.8 nC @ 4.5 V), and leverages NextPowerS3 SchottkyPlus technology to achieve soft-recovery (s-factor > 1) with < 1 µA leakage at 25 °C.

For engineers reviewing the PSMN2R0-30YLD datasheet, PSMN2R0-30YLD pinout, PSMN2R0-30YLD application, or PSMN2R0-30YLD equivalent, key selection criteria include its 4.5 V gate drive optimization, 0.92 K/W junction-to-mounting-base thermal resistance, and LFPAK56's clip-bonded, wire-bond-free construction qualified to 175 °C.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus body diode integration-enabling Schottky-like low V_SD (0.8–1.2 V) and fast reverse recovery (t_rr = 37.5 ns) without elevated leakage. Its gate charge profile (Q_GD = 6.3 nC, Q_G(tot) = 21.8 nC @ 4.5 V) is optimized for high-frequency switching in POL and VRM topologies.

The LFPAK56 package uses copper-clip die attach and exposed mounting base (drain-connected), delivering low parasitic inductance and R_th(j-mb) = 0.92 K/W. It supports wave soldering with visual lead inspection and operates across T_j = –55 to 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines use in ≤30 V bus systems like 12 V/24 V server rails.
R_DS(on)	2.0 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <100 mW conduction loss at 50 A, critical for high-current POL efficiency.
I_D	100 A continuous @ T_mb = 25 °C - Limited by package thermal capacity; supports high-current secondary-side rectification.
Q_G(tot)	21.8 nC @ V_GS = 4.5 V - Low gate charge enables efficient drive from standard logic-level controllers without external buffers.
t_rr	37.5 ns - Fast, soft reverse recovery reduces EMI and voltage spikes during diode commutation in synchronous buck stages.
R_th(j-mb)	0.92 K/W - Enables direct thermal coupling to heatsink or PCB copper, supporting high-power density designs without forced air.
V_GS(th)	1.7 V typical - Ensures reliable turn-on with 3.3 V or 4.5 V gate drivers, eliminating need for level-shifting in low-voltage control circuits.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, clip-bonded Power-SO8 package with exposed mounting base (drain-connected), no wire bonds or die attach glue, and qualification to 175 °C. Its low-inductance layout and wave-solderable leads support high-reliability power delivery.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with low C_iss (2969–4157 pF); compatible with standard gate drivers and layout practices.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return node.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft reverse recovery (s-factor = 1.02) with V_SD = 0.8–1.2 V and t_rr = 37.5 ns - eliminates snubbers and reduces EMI in synchronous rectifiers.
Ultra-low gate charge	Q_G(tot) = 21.8 nC @ 4.5 V - minimizes driver power loss and enables >1 MHz operation in high-frequency VRMs.
Optimized for 4.5 V drive	V_GS(th) = 1.2–2.2 V; R_DS(on) = 2.1–2.5 mΩ @ 4.5 V - ensures full enhancement using standard logic-level controllers without boost circuitry.
High-reliability construction	Clip-bonded die, solder die attach, no wire bonds or epoxy - achieves 175 °C qualification and superior power cycling endurance vs. traditional SO-8.
Wave-solderable leads	Exposed planar leads enable optical solder-joint inspection and eliminate voiding risks associated with thermal pads under QFNs.

Applications

Server On-Board DC-DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers with strict thermal and space constraints.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 2.0 mΩ R_DS(on) and 0.92 K/W R_th(j-mb) enable >95% efficiency at 50–100 A while maintaining T_j < 125 °C on 2 oz copper.

Use Scenario: Secondary-side rectification in telecom AC/DC front-end PSUs delivering 48 V output with tight hold-up time requirements.

IC Role / Device Role / Timing Role: High-current, low-loss freewheeling switch in active clamp forward or LLC resonant converters.

Use Value: SchottkyPlus diode behavior reduces reverse recovery losses by >60% versus standard MOSFETs, improving light-load efficiency and reducing heatsink size.

VRM Voltage Regulator Module

Brushless Motor Control

Use Scenario: Integrated VRM solution for ASIC/FPGA power domains requiring rapid transient response and <10 mV ripple.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck topology with 4.5 V PWM controller interface.

Use Value: Ultra-low Q_GD (6.3 nC) and fast switching (t_r/t_f ≈ 31/19 ns) minimize dead-time losses and improve load-step response fidelity.

Use Scenario: High-side/low-side half-bridge switches in 24 V BLDC motor drives for industrial automation and robotics.

IC Role / Device Role / Timing Role: Power stage switch handling 30–60 A peak phase current with PWM frequencies up to 20 kHz.

Use Value: 175 °C rating and robust avalanche energy (397 mJ) ensure reliability under motor stall and regenerative braking conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V but higher Q_G = 32 nC; TO-263 package with higher R_th(j-a).	Better conduction loss at high V_GS, but slower switching and inferior thermal performance in compact layouts.	Prefer when lowest R_DS(on) dominates and board space allows larger TO-263 footprint.
Vishay SiR626DP	R_DS(on) = 2.2 mΩ @ 10 V; PowerPAK SO-8 package with R_th(j-mb) = 1.2 K/W and no exposed drain pad.	Similar on-resistance but higher thermal resistance and no SchottkyPlus diode - requires external snubber in high-dV/dt apps.	Choose if legacy PowerPAK SO-8 compatibility is required and soft recovery is not critical.

Compared with BSC014N04LS6 and SiR626DP, PSMN2R0-30YLD uniquely balances ultra-low Q_G, SchottkyPlus soft recovery, and LFPAK56's 0.92 K/W thermal path - making it optimal for high-frequency, high-density, low-EMI POL and telecom rectification where both switching and conduction losses must be minimized simultaneously.

Availability

PSMN2R0-30YLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side synchronous rectification, and VRM power delivery requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN2R0-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PSMN2R0-30YLD belongs to the NextPowerS3 portfolio, designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low switching loss, soft recovery, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current for PSMN2R0-30YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 100 A per Figure 2 of the datasheet. This limit is package-constrained-not silicon-limited-and remains constant up to 100 °C due to the LFPAK56's efficient thermal design. Above 100 °C, current must be reduced linearly per the normalized power dissipation curve.

Does PSMN2R0-30YLD require a gate resistor for safe operation in a 1 MHz synchronous buck converter?

A gate resistor is recommended to damp ringing and control dV/dt, especially given its ultra-low Q_G and fast switching (t_r/t_f ≈ 31/19 ns). A 2–5 Ω series resistor typically balances switching speed and EMI; exact value depends on PCB layout parasitics and driver strength, as validated in Nexperia's AN11158 application note.

How does the SchottkyPlus body diode compare to a discrete Schottky in terms of forward voltage and leakage?

The SchottkyPlus diode exhibits V_SD = 0.8–1.2 V at 25 A (comparable to a 45 V Schottky), but with leakage < 1 µA at 25 °C-over 10× lower than typical discrete Schottkys. This combination avoids the trade-off between low V_F and high I_R that plagues discrete solutions in high-temp environments.

Is PSMN2R0-30YLD suitable for automotive applications?

No. PSMN2R0-30YLD is not AEC-Q101 qualified and lacks automotive-specific stress testing, failure mode analysis, or PPAP documentation. Nexperia explicitly states non-automotive qualification in Section 13 of the datasheet; use only in industrial, computing, or telecom systems.

PSMN2R0-30YLD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2969 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 142W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R0-30YLD/2X FAQ

1.How can I place an order for PSMN2R0-30YLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R0-30YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R0-30YLD/2X reliable?

The price and inventory of PSMN2R0-30YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-30YLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN2R0-30YLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-30YLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R0-30YLD/2X?

PSMN2R0-30YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R0-30YLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R0-30YLD/2X?

For technical support, including PSMN2R0-30YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-30YLD/2X requirements.

6.How does Aetrix verify that PSMN2R0-30YLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN2R0-30YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-30YLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN2R0-30YLD/2X?

All PSMN2R0-30YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-30YLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R0-30YLD/2X part is unused and in its original packaging.

Return procedure for PSMN2R0-30YLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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