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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R0-30YLDX

Name: PSMN2R0-30YLDX
Brand: Nexperia USA Inc.
SKU: PSMN2R0-30YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R0-30YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R0-30YLDX.pdf

Description:: MOSFET N-CH 30V 100A LFPAK56

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Product details

Overview

PSMN2R0-30YLD from Nexperia is an N-channel 30 V, 2.0 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, engineered for high-efficiency synchronous rectification and DC-DC conversion at switching frequencies up to several MHz. It delivers R_DS(on) = 1.61 mΩ @ V_GS = 10 V, T_j = 25 °C; Q_G(tot) = 21.8 nC @ V_GS = 4.5 V; and soft-recovery s-factor > 1.02 - enabling low EMI, high-density power delivery in server VRMs and telecom POL modules.

For engineers reviewing the PSMN2R0-30YLD datasheet, PSMN2R0-30YLD pinout, PSMN2R0-30YLD application, or PSMN2R0-30YLD equivalent, key selection criteria include its 4.5 V gate drive optimization, <1 µA I_DSS leakage at 25 °C, clip-bonded die construction qualified to 175 °C, and LFPAK56 thermal resistance R_th(j-mb) = 0.92 K/W - critical for thermally constrained high-current designs.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture, delivering Schottky-like reverse recovery (t_rr = 37.5 ns, Q_r = 32 nC) without elevated leakage - unlike integrated Schottky solutions. Its gate charge profile (Q_GD = 6.3 nC, Q_GS(th) = 4.5 nC) supports fast, controlled turn-on with minimal voltage overshoot.

The LFPAK56 package integrates a copper mounting base directly connected to the drain, enabling low-inductance, high-current routing and 142 W power dissipation at T_mb = 25 °C. Thermal design leverages R_th(j-mb) = 0.92 K/W and wave-solderable exposed leads for reliable PCB thermal coupling and visual solder inspection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in telecom/server DC-DC stages.
R_DS(on)	1.61 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables ≤1.6 W conduction loss at 100 A, supporting high-current secondary-side rectification.
Q_G(tot)	21.8 nC @ V_GS = 4.5 V - Low gate charge allows efficient drive from standard 3.3 V/5 V controllers without external buffers.
t_rr / Q_r	37.5 ns / 32 nC - Fast, soft reverse recovery minimizes switching losses and EMI in synchronous buck topologies.
R_th(j-mb)	0.92 K/W - Enables direct thermal path to heatsink or PCB copper, sustaining >100 A continuous current with proper board layout.
I_D	100 A @ T_mb = 25 °C - Package-limited continuous current rating suitable for high-power POL and VRM output stages.
V_GS(th)	1.2–2.2 V - Logic-level threshold ensures full enhancement with 3.3 V or 4.5 V gate drivers, eliminating level-shifting needs.

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, lead-frame-based surface-mount package with exposed drain mounting base for superior thermal and electrical performance. It features no wire bonds or die attach adhesive, qualified to 175 °C junction temperature and wave-solderable with visual solder inspection capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input optimized for low-Q_G drive; requires <5 Ω external gate resistor for optimal switching control.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and thermal interface to PCB/heatsink.

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft reverse recovery (s-factor = 1.02) with <1 µA leakage at 25 °C - eliminates trade-off between low Q_r and high I_DSS.
Ultra-low Q_G, Q_GD, Q_OSS	Q_G(tot) = 21.8 nC @ 4.5 V; Q_GD = 6.3 nC - enables high-frequency operation (>1 MHz) with minimal driver loss and voltage spike.
Clip-bonded die assembly	No wire bonds or epoxy die attach - improves power cycling reliability and thermal stability up to 175 °C junction temperature.
Optimized for 4.5 V gate drive	R_DS(on) = 2.1 mΩ @ V_GS = 4.5 V, T_j = 25 °C - ensures robust conduction with common logic-level controllers and PMICs.
Low parasitic inductance/resistance	LFPAK56 layout reduces source inductance by >50% vs. SO-8 - critical for minimizing ringing and improving EMI in fast-switching converters.

Applications

Server On-Board DC-DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers with strict thermal envelope and efficiency targets.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 500 kHz–1 MHz with 3.3 V gate drive.

Use Value: 1.61 mΩ R_DS(on) and 37.5 ns t_rr reduce conduction + switching losses by ≥12% vs. legacy MOSFETs, enabling higher power density without forced air cooling.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V telecom DC-DC bricks for base station power supplies.

IC Role / Device Role / Timing Role: High-current (≥80 A) low-V_DS switch replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: <1 µA I_DSS prevents standby power penalty; clip-bonded LFPAK56 withstands 100% load step transients without thermal derating.

VRM Voltage Regulator Module

Brushless Motor Control

Use Scenario: High-phase-count VRM supplying V_core to AI accelerators with dynamic current slew rates >100 A/µs.

IC Role / Device Role / Timing Role: Bottom-side FET in interleaved buck stage, leveraging low Q_GD for precise dead-time control and reduced shoot-through risk.

Use Value: Q_GD/Q_G ratio of 0.29 ensures stable hard-switching behavior even under rapid load transients and high dV/dt noise.

Use Scenario: Inverter leg switch in 24 V BLDC motor drives for industrial automation, requiring robust avalanche energy handling.

IC Role / Device Role / Timing Role: High-side/low-side switching element rated for unclamped inductive switching with E_AS = 397 mJ.

Use Value: Avalanche ruggedness and 175 °C T_j(max) allow operation in sealed enclosures without active cooling, reducing system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N04L	R_DS(on) = 2.0 mΩ @ 4.5 V; Q_G = 31 nC; TO-252 package; higher R_th(j-a) (60 K/W).	Larger footprint and higher thermal resistance limit current density in compact POL modules.	Prefer PSMN2R0-30YLD when board space, thermal performance, or >500 kHz switching is required.
Vishay SiR626DP	R_DS(on) = 1.8 mΩ @ 4.5 V; Q_G = 25.5 nC; PowerPAK SO-8; no clip bonding; max T_j = 150 °C.	Lower avalanche rating (E_AS = 220 mJ); not qualified for 175 °C operation.	Choose PSMN2R0-30YLD for mission-critical telecom or automotive-adjacent industrial applications demanding extended temperature reliability.

Compared with IPP020N04L and SiR626DP, PSMN2R0-30YLD offers superior thermal resistance (0.92 K/W), lower gate charge at logic-level drive, and 175 °C qualification - making it the preferred choice for high-power-density, high-reliability synchronous rectification where thermal headroom and switching speed are limiting factors.

Availability

PSMN2R0-30YLD is available at Aetrix Electronics and suitable for server on-board DC-DC, telecom secondary-side synchronous rectification, and VRM voltage regulator modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN2R0-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, with leadership in discrete, logic, and MOSFET technologies. The company emphasizes high-volume reliability, automotive-grade quality, and application-driven innovation.

PSMN2R0-30YLD belongs to the NextPowerS3 portfolio, designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial systems - prioritizing low Q_G, soft switching, and robust thermal performance over generic switching specs.

FAQ

What is the maximum continuous drain current for PSMN2R0-30YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is rated at 100 A - capped by package thermal limits rather than silicon capability. This is confirmed in Figure 2 of the datasheet, where ID remains flat at 100 A across T_mb = 25–100 °C before derating begins above 100 °C.

Does PSMN2R0-30YLD require a gate resistor for stable operation in a 1 MHz synchronous buck converter?

Yes - a 3.3 Ω to 5.6 Ω gate resistor is recommended to dampen ringing caused by low source inductance and high dV/dt. The device's ultra-low Q_GD (6.3 nC) and fast tr/tf (31 ns/19 ns) make external gate control essential to avoid oscillation and ensure clean turn-on/turn-off transitions.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practical circuit behavior?

The "SchottkyPlus" diode exhibits t_rr = 37.5 ns and Q_r = 32 nC with soft recovery (s-factor = 1.02), closely matching Schottky diode switching but retaining MOSFET gate controllability. Unlike standard body diodes, it avoids high reverse recovery current spikes that cause EMI and cross-conduction in synchronous rectifiers.

Can PSMN2R0-30YLD be used in wave soldering processes without thermal damage?

Yes - the LFPAK56 package is explicitly qualified for wave soldering per Figure 19, with peak temperature tolerance up to 260 °C and exposed leads designed for optimal solder wetting and visual inspection. Its clip-bonded construction eliminates epoxy degradation risks associated with conventional packages.

PSMN2R0-30YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2969 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 142W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R0-30YLDX FAQ

1.How can I place an order for PSMN2R0-30YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R0-30YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R0-30YLDX reliable?

The price and inventory of PSMN2R0-30YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-30YLDX is usually 5 days.

3.What payment methods are accepted for PSMN2R0-30YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-30YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R0-30YLDX?

PSMN2R0-30YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R0-30YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R0-30YLDX?

For technical support, including PSMN2R0-30YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-30YLDX requirements.

6.How does Aetrix verify that PSMN2R0-30YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R0-30YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-30YLDX meets industry standards.

7.What is the process for return or replacement of PSMN2R0-30YLDX?

All PSMN2R0-30YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-30YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R0-30YLDX part is unused and in its original packaging.

Return procedure for PSMN2R0-30YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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