Nexperia USA Inc. PSMN2R0-40YLBX

Overview

PSMN2R0-40YLBX from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 2.1 mΩ R_DS(on) at V_GS = 10 V and 25 °C, and 180 A continuous drain current at T_mb = 25 °C. It employs NextPowerS3 Schottky-Plus technology for soft body-diode recovery and enhanced EMC performance, targeting high-efficiency DC-DC converters and motor control.

For engineers reviewing the PSMN2R0-40YLBX datasheet, PSMN2R0-40YLBX pinout, PSMN2R0-40YLBX application, or PSMN2R0-40YLBX equivalent, key selection criteria include its 4.5 V gate drive compatibility, 175 °C junction-rated LFPAK56 thermal robustness, avalanche ruggedness (100% tested to 160 A I_AS), low Q_rr/Q_G, and Schottky-Plus diode characteristics for reduced switching loss and EMI.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture optimized for fast switching with soft reverse-recovery behavior-trr = 29 ns and Q_r = 20 nC-enabling high-frequency operation in synchronous rectification and eFuse circuits. Its R_DS(on) remains stable across temperature (R_DS(on) ≤ 4.1 mΩ at T_j = 175 °C), supporting reliable linear-mode SOA operation.

The device integrates a copper-clip die attach and exposed mounting base (drain-connected) for ultra-low R_th(j-mb) = 0.8 K/W, enabling high-power density designs without external heatsinks in thermally constrained PCB layouts. Its gate charge profile (Q_G(tot) = 28 nC typ. at V_GS = 4.5 V) supports efficient driving with standard logic-level controllers.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package featuring a large exposed copper mounting base (drain-connected), three parallel source leads, and one gate lead. Its copper-clip construction and solder die attach deliver superior thermal and electrical performance versus conventional SO-8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IPP026N04L and SiR626DP, PSMN2R0-40YLBX delivers lower system-level EMI through its Schottky-Plus diode and higher thermal resilience via 175 °C qualification and 0.8 K/W R_th(j-mb), making it optimal for compact, high-reliability industrial power stages.

Availability

PSMN2R0-40YLBX is available at Aetrix Electronics and suitable for brushless DC motor control, industrial eFuse, and 48 V DC-DC converter designs requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for PSMN2R0-40YLBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to Nexperia's NextPowerS3 portfolio, engineered specifically for high-efficiency, high-current power switching in space-constrained applications where thermal performance, EMC, and avalanche robustness are non-negotiable.

FAQ

What is the maximum continuous drain current for PSMN2R0-40YLBX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 143 A per the datasheet Fig. 2. This derating reflects thermal limits of the LFPAK56 package and PCB layout; actual current depends on copper area, airflow, and heatsinking. The 180 A rating applies only at T_mb = 25 °C with optimal thermal design.

Can PSMN2R0-40YLBX be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage V_GS(th) ranges from 1.35 V to 2.05 V, but full enhancement requires ≥4.5 V for specified R_DS(on). At 3.3 V, R_DS(on) rises significantly (>5 mΩ), increasing conduction loss and thermal stress. A level-shifting driver or 5 V buffer is required for reliable operation.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base (mb) is internally connected to the drain (D). This is confirmed in Table 2 (Pinning information) and Figure 17 (package outline). PCB layout must treat the exposed pad as a high-voltage, high-current drain node; isolation requires insulating thermal interface material and clearance design.

Does PSMN2R0-40YLBX support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (Fig. 11) ensures inherent current sharing when paralleled. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors (≥5 Ω) are mandatory to prevent oscillation and unequal dynamic current distribution during switching transitions.