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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R0-40YLDX

Name: PSMN2R0-40YLDX
Brand: Nexperia USA Inc.
SKU: PSMN2R0-40YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R0-40YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R0-40YLDX.pdf

Description:: MOSFET N-CH 40V 180A LFPAK56

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Product details

Overview

PSMN2R0-40YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 2.1 mΩ R_DS(on) at V_GS = 10 V and 25 °C, and 180 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is optimized for high-efficiency DC–DC converters and synchronous rectification.

For engineers reviewing the PSMN2R0-40YLD datasheet, PSMN2R0-40YLD pinout, PSMN2R0-40YLD application, or PSMN2R0-40YLD equivalent, key selection criteria include its 4.5 V gate drive compatibility, 175 °C junction-rated LFPAK56 thermal performance, avalanche ruggedness (160 A I_AS), low Q_rr/Q_G, and Schottky-Plus diode characteristics for reduced EMI and improved reverse recovery behavior.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in a 175 °C-qualified LFPAK56 package. Its gate threshold voltage (1.35–2.05 V) and low R_DS(on) temperature coefficient enable stable switching down to 4.5 V drive while maintaining robust linear-mode SOA and avalanche energy handling (609 mJ E_DS(AL)).

The integrated Schottky-Plus body diode delivers V_SD = 0.8–1.0 V at 25 A, t_rr = 32 ns, and Q_r = 27 nC - enabling high-frequency synchronous rectification without external diode replacement. Dynamic parameters including Q_G(tot) = 30 nC (V_GS = 4.5 V), Q_GD = 7.3 nC, and C_iss = 4701 pF support fast, low-loss switching in hard- and soft-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 36 V nominal bus systems (e.g., 48 V automotive/industrial rails).
R_DS(on)	2.1 mΩ typical at V_GS = 10 V, 25 °C - enables <1.1 W conduction loss at 150 A, critical for high-current load switches and eFuses.
I_D (cont)	180 A at T_mb = 25 °C - validated continuous current rating supported by low R_th(j-mb) = 0.8 K/W for direct PCB thermal coupling.
Q_G(tot)	30 nC typical at V_GS = 4.5 V - ensures efficient gate drive with standard logic-level controllers and low driver power dissipation.
t_rr	32 ns reverse recovery time - minimizes switching loss and voltage overshoot during diode commutation in synchronous buck stages.
V_GS(th)	1.73 V typical - guarantees reliable turn-on with 3.3 V or 4.5 V microcontroller outputs without level-shifting circuitry.
E_DS(AL)	609 mJ non-repetitive avalanche energy - provides robustness against inductive switching transients in motor control and hot-swap applications.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with exposed mounting base connected to drain, copper-clip construction, and 175 °C qualification. Its footprint supports wave and reflow soldering, visual solder-joint inspection, and low-inductance layout via short source/gate leads and direct thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and resistance - essential for high di/dt switching and low-loss synchronous rectification.
4	Gate (G)	Single gate input with low RG = 0.8 Ω - enables fast, controlled turn-on/turn-off and reduces gate oscillation risk in high-frequency converters.
Mounting Base (mb)	Drain (D)	Exposed copper drain pad provides primary thermal path to PCB and electrical connection to high-side or low-side drain node - eliminates need for wire bonds.

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft-recovery (t_a = 17 ns, t_b = 15 ns), low Q_r = 27 nC, and V_SD = 0.8 V at 25 A - eliminates snubbers and reduces EMI in synchronous rectifiers.
175 °C qualified LFPAK56 package	Copper-clip + solder die attach achieves R_th(j-mb) = 0.8 K/W - enables high-power density designs without heatsinks in thermally constrained spaces.
Avalanche ruggedness	100% tested I_AS = 160 A and E_DS(AL) = 609 mJ - ensures reliability in unclamped inductive switching events common in BLDC motor drives and hot-swap circuits.
Low gate charge profile	Q_G(tot) = 30 nC / Q_GD = 7.3 nC at V_GS = 4.5 V - supports >1 MHz switching with minimal driver loss and reduced Miller-induced shoot-through risk.
Logic-level gate drive optimization	V_GS(th) = 1.73 V and R_DS(on) = 2.3 mΩ at V_GS = 4.5 V - allows direct interface with 3.3 V/4.5 V MCUs and PMICs without gate drivers.

Applications

High-Performance Synchronous Rectification

DC–DC Converters

Use Scenario: Secondary-side switch in isolated 48 V–12 V LLC or phase-shifted full-bridge converters delivering >100 A output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 2.1 mΩ R_DS(on) and soft-recovery diode cut conduction loss by 40% vs. 40 V Schottky, while Q_r reduction lowers switching loss by 35%.

Use Scenario: High-current buck converter in server VRMs or telecom power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing 150+ A load current with tight thermal constraints.

Use Value: 0.8 K/W R_th(j-mb) and 180 A rating allow full-load operation on 2-layer 70 µm FR4 PCB without heatsink, reducing BOM cost and board area.

Brushless DC Motor Control

Battery Protection & eFuse

Use Scenario: Inverter leg in 24–48 V BLDC drives for drones, power tools, or industrial actuators requiring >100 A peak current.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge with fast PWM timing and high dv/dt immunity.

Use Value: Avalanche rating (160 A I_AS) and strong SOA withstand motor back-EMF spikes and regenerative braking transients without failure.

Use Scenario: Primary protection switch in 48 V battery packs for e-bikes or energy storage, supporting 150 A continuous and 800 A fault current interruption.

IC Role / Device Role / Timing Role: Load switch with fast overcurrent response and integrated diode for reverse-polarity and short-circuit protection.

Use Value: Schottky-Plus diode enables bidirectional current sensing and low-loss reverse conduction during cell balancing, while low R_DS(on) limits voltage drop to <0.3 V at 150 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N04L	R_DS(on) = 2.0 mΩ @ 10 V, but only rated to 150 °C; Q_G = 35 nC at 4.5 V; no avalanche test data published.	Lacks 175 °C rating and documented avalanche ruggedness - unsuitable for high-temp motor control or unclamped inductive loads.	Select when ambient temperature stays below 125 °C and avalanche stress is absent; verify SOA under linear-mode conditions.
Vishay SIHF020N40E	TO-220FP package; R_DS(on) = 2.2 mΩ @ 10 V; higher R_th(j-a) = 45 K/W; Q_r = 42 nC - slower diode recovery.	Requires heatsink and larger PCB area; higher EMI due to longer t_rr and lack of soft recovery.	Prefer for legacy through-hole designs where LFPAK56 reflow is not feasible; avoid in high-frequency (>300 kHz) or space-constrained layouts.

Compared with IPP020N04L and SIHF020N40E, PSMN2R0-40YLD delivers superior thermal performance (0.8 K/W vs. ≥2.5 K/W), verified avalanche robustness, and Schottky-Plus diode behavior - making it the optimal choice for compact, high-reliability, high-frequency power switching where thermal headroom and transient resilience are critical.

Availability

PSMN2R0-40YLD is available at Aetrix Electronics and suitable for high-current DC–DC converters, brushless DC motor control, and battery protection systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PSMN2R0-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced power MOSFETs and ESD protection solutions.

This device belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-power-density switching applications demanding low R_DS(on), fast switching, and robust body-diode performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for PSMN2R0-40YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 143 A per Figure 2 of the datasheet. This value reflects thermal limitations of the LFPAK56 package and PCB copper area - actual current must be validated against measured T_j using R_th(j-mb) = 0.8 K/W and system-level thermal design.

Does PSMN2R0-40YLD require a gate resistor for stability in 500 kHz switching applications?

Yes - a 2.2–4.7 Ω gate resistor is recommended to dampen ringing caused by low gate resistance (0.8 Ω typ.) and PCB trace inductance. This ensures clean turn-on/turn-off edges and prevents unintended oscillation, especially when driving from low-impedance logic-level sources like UCC2753x or TC442x gate drivers.

Can PSMN2R0-40YLD be used in parallel configurations for >200 A applications?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with T_j) enables inherent current sharing. Parallel operation requires matched gate drive layout, symmetrical source routing, and thermal coupling via shared copper pour to maintain <5 °C inter-device ΔT for balanced loading.

Is the mounting base electrically isolated from the PCB in standard LFPAK56 assembly?

No - the mounting base is the drain terminal and must be electrically connected to the drain net on the PCB. It is not isolated; thermal vias or copper pours beneath the base must be routed to the drain potential. Insulating thermal pads or dielectric substrates are incompatible with this package's electrical and thermal design intent.

PSMN2R0-40YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6581 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R0-40YLDX FAQ

1.How can I place an order for PSMN2R0-40YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R0-40YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R0-40YLDX reliable?

The price and inventory of PSMN2R0-40YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-40YLDX is usually 5 days.

3.What payment methods are accepted for PSMN2R0-40YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-40YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R0-40YLDX?

PSMN2R0-40YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R0-40YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R0-40YLDX?

For technical support, including PSMN2R0-40YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-40YLDX requirements.

6.How does Aetrix verify that PSMN2R0-40YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R0-40YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-40YLDX meets industry standards.

7.What is the process for return or replacement of PSMN2R0-40YLDX?

All PSMN2R0-40YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-40YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R0-40YLDX part is unused and in its original packaging.

Return procedure for PSMN2R0-40YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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