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Nexperia USA Inc. PSMN2R0-55YLHX
- Part No.:
- PSMN2R0-55YLHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1023, 4-LFPAK
- Datasheet:
-
PSMN2R0-55YLHX.pdf
- Description:
- PSMN2R0-55YLH/SOT1023/4 LEADS
- Quantity:
- Payment:
- Shipping:
Inventory:13,205
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Product details
Overview
PSMN2R0-55YLHX from Nexperia is an N-channel logic-level enhancement-mode MOSFET in LFPAK56E (SOT1023) package, rated for 55 V VDS, 2.1 mΩ RDS(on) at VGS = 10 V and 25 A, 200 A continuous drain current, and qualified to 175 °C junction temperature. It delivers high-efficiency switching in battery isolation and DC motor control circuits using SchottkyPlus technology for low spiking and soft body-diode recovery.
For engineers reviewing the PSMN2R0-55YLHX datasheet, PSMN2R0-55YLHX pinout, PSMN2R0-55YLHX application, or PSMN2R0-55YLHX equivalent, this device is selected for high-current linear-mode operation, avalanche-rugged 36 V battery systems, low-inductance synchronous rectification, and EMI-sensitive load-switch designs requiring validated 100% avalanche testing.
Technical Context
This MOSFET employs Nexperia's SchottkyPlus technology to achieve Schottky-like switching performance-specifically soft reverse-recovery (trr = 36 ns, Qr = 36 nC) and low spiking-without elevated IDSS leakage (≤1 µA at 25 °C, ≤3.5 µA at 125 °C). Its LFPAK56E copper-clip construction yields ultra-low package inductance and Rth(j-mb) = 0.33 K/W.
The device features narrow VGS(th) (1.2–2.2 V), low gate charge (QG(tot) = 54–84 nC at VGS = 4.5 V), and strong SOA with 745 mJ unclamped avalanche energy at Tj(init) = 25 °C. It is optimized for 36 V nominal battery systems (e.g., 10-cell Li-ion) and supports safe paralleling due to tight threshold spread.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum drain-source voltage - supports 36 V battery systems with 50 % headroom for transients and ripple. |
| RDS(on) | 1.63–2.1 mΩ at VGS = 10 V, Tj = 25 °C - enables <100 mW conduction loss at 25 A, critical for high-efficiency BMS and motor drives. |
| ID (cont) | 200 A continuous drain current - validated under application conditions; limited in practice by PCB thermal design and mounting base temperature. |
| QG(tot) | 54–84 nC at VGS = 4.5 V - ensures fast, low-loss switching up to several hundred kHz with minimal gate-drive power. |
| EAS | 745 mJ unclamped avalanche energy - 100% tested for robustness in inductive load switching and fault conditions. |
| trr | 36 ns reverse recovery time - reduces diode-induced voltage spikes and EMI in synchronous rectifier and H-bridge topologies. |
| Rth(j-mb) | 0.33–0.45 K/W junction-to-mounting-base thermal resistance - enables direct thermal coupling to heatsinks or copper planes without thermal vias. |
Pinout & Package
LFPAK56E (SOT1023) is a low-stress, exposed lead-frame surface-mount package with copper-clip die attach, optimized for high-current reliability, solder-joint inspection, and thermal performance. Mounting base (pin 4) is electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching. |
| 4 | Gate (G) | Single gate input with low RG (0.52–3.3 Ω) for stable, low-noise turn-on/turn-off control. |
| Mounting Base (mb) | Drain (D) | Exposed copper drain pad provides primary thermal path and low-inductance power connection to PCB ground plane or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft recovery (ta = 21 ns, tb = 14 ns) and low Qr = 36 nC enable low-EMI synchronous rectification without external Schottky. |
| Avalanche ruggedness | 100% production-tested to 745 mJ single-pulse energy - eliminates need for external clamping in motor drive and BMS fault handling. |
| Linear-mode SOA | Rated for safe high-current switching in active region (e.g., hot-swap, inrush limiting) with guaranteed SOA curves up to 175 °C. |
| Logic-level gate drive | VGS(th) = 1.2–2.2 V with narrow spread - allows direct drive from 3.3 V or 5 V microcontrollers and simplifies paralleling of multiple devices. |
| LFPAK56E thermal performance | Rth(j-mb) = 0.33 K/W and Ptot = 333 W at Tmb = 25 °C - supports high-power density designs without complex thermal management. |
Applications
| Brushless DC Motor Control | Synchronous Rectifier |
|---|---|
Use Scenario: High-current H-bridge driver in e-bike or power tool motor controllers operating from 36 V lithium-ion packs. IC Role / Device Role / Timing Role: Low-side and high-side switching element with fast, soft-body-diode recovery to minimize shoot-through risk and voltage overshoot during commutation. Use Value: Enables >98 % efficiency at 200 A peak load while maintaining <100 ns timing margin between gate signals due to low QGD (14–31 nC) and fast tf (28 ns). |
Use Scenario: Secondary-side switch in 3 kW server AC-DC power supply with 12 V output rail. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction losses and improve thermal performance in LLC resonant topology. Use Value: Achieves 1.5 mΩ effective on-resistance at 12 V output, cutting rectifier losses by 65 % versus 40 V Schottky, with no added leakage penalty. |
| Battery Protection (BMS) | High-Current Load Switch |
Use Scenario: Main disconnect FET in automotive-grade 36 V battery pack with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting both charge and discharge paths with integrated avalanche capability. Use Value: Withstands 115 A non-repetitive avalanche current and 1.77 J energy, enabling fail-safe disconnection without external TVS or snubbers. |
Use Scenario: Hot-swap controller for industrial 36 V power distribution unit managing up to 200 A inrush-limited loads. IC Role / Device Role / Timing Role: Linear-mode controlled pass element during startup, transitioning to saturated switch after soft-start completion. Use Value: Guaranteed SOA up to 175 °C and 200 A allows precise inrush control without thermal runaway, reducing required heatsink volume by 40 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N06N | 60 V VDS, 2.6 mΩ RDS(on) @ 10 V, TO-220 package, higher Rth(j-a) (1.2 K/W) | Requires heatsink and larger PCB area; lacks 100% avalanche test and SchottkyPlus soft recovery | Choose when board space permits through-hole mounting and 60 V headroom is mandatory over 55 V. |
| Vishay SiR626DP | 60 V VDS, 2.0 mΩ RDS(on) @ 10 V, PowerPAK SO-8L, QG = 102 nC (higher than PSMN2R0-55YLHX's 54–84 nC) | Higher gate charge increases switching losses above 100 kHz; no specified avalanche energy rating | Prefer for lower-cost, lower-frequency (<50 kHz) load switching where EMI and avalanche robustness are secondary. |
Compared with IPP026N06N and SiR626DP, PSMN2R0-55YLHX offers superior thermal performance via LFPAK56E, lower gate charge for high-frequency efficiency, and production-validated avalanche ruggedness-making it optimal for compact, high-reliability 36 V battery and motor-control systems.
Availability
PSMN2R0-55YLHX is available at Aetrix Electronics and suitable for brushless DC motor control, battery management systems, synchronous rectification in server PSUs, and high-current load switching requiring stable component supply across industrial and transportation OEM programs.
Supply support for PSMN2R0-55YLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.
PSMN2R0-55YLHX belongs to Nexperia's ASFET family for Battery Isolation and DC Motor Control, engineered specifically for 36 V battery-powered systems demanding avalanche strength, linear-mode stability, and low EMI switching performance.
FAQ
What is the maximum continuous drain current for PSMN2R0-55YLHX, and how is it validated?
The datasheet specifies 200 A continuous drain current, validated through application-level testing under real-world thermal conditions-not just theoretical calculation. This rating assumes proper PCB layout with adequate copper area and mounting base cooling; actual current is limited by thermal design, not intrinsic device capability. The device maintains RDS(on) ≤ 4.9 mΩ at 150 °C junction temperature, ensuring stable performance across its full operating range.
Does PSMN2R0-55YLHX require a gate resistor for reliable switching?
A gate resistor is recommended to control dV/dt and prevent oscillation, especially in high-current layouts. With QG = 54–84 nC and low internal RG (0.52–3.3 Ω), a 2.2–5.6 Ω external resistor ensures clean 30–60 ns rise/fall times while damping parasitic ringing. No gate driver IC is required for 3.3 V or 5 V logic-level control, but a dedicated driver improves efficiency above 200 kHz.
How does SchottkyPlus technology differ from a standard MOSFET body diode?
SchottkyPlus modifies the body diode's doping and structure to deliver soft reverse recovery (tr = 36 ns, Qr = 36 nC) and low forward voltage (VSD = 0.75 V at 25 A), mimicking Schottky performance without the high leakage (IDSS ≤ 1 µA at 25 °C). Unlike discrete Schottky diodes, it integrates seamlessly into the MOSFET cell layout, eliminating package inductance and thermal mismatch issues.
Can PSMN2R0-55YLHX be paralleled with identical units for higher current capacity?
Yes-its narrow VGS(th) range (1.2–2.2 V) and matched RDS(on) temperature coefficient enable stable current sharing without external balancing resistors. Parallel operation requires symmetrical PCB layout, equal gate trace lengths, and shared mounting base thermal coupling. Derating to 180 A per device is advised for long-term reliability in continuous 175 °C ambient environments.
PSMN2R0-55YLHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1023, 4-LFPAK
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 184 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11353 pF @ 27 V
- FET Feature:
- -
- Power Dissipation (Max):
- 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN2R0-55YLHX FAQ
1.How can I place an order for PSMN2R0-55YLHX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN2R0-55YLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN2R0-55YLHX reliable?
The price and inventory of PSMN2R0-55YLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R0-55YLHX is usually 5 days.
3.What payment methods are accepted for PSMN2R0-55YLHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R0-55YLHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN2R0-55YLHX?
PSMN2R0-55YLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN2R0-55YLHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN2R0-55YLHX?
For technical support, including PSMN2R0-55YLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R0-55YLHX requirements.
6.How does Aetrix verify that PSMN2R0-55YLHX is sourced from the original manufacturer or authorized distributors?
All PSMN2R0-55YLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R0-55YLHX meets industry standards.
7.What is the process for return or replacement of PSMN2R0-55YLHX?
All PSMN2R0-55YLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R0-55YLHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN2R0-55YLHX part is unused and in its original packaging.
Return procedure for PSMN2R0-55YLHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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