Nexperia USA Inc. PSMN2R0-60PS,127

Overview

PSMN2R0-60PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 60 V V_DS, 2.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 120 A continuous drain current at T_mb = 100 °C and supports high-efficiency power switching in industrial DC-DC converters and motor control stages.

For engineers reviewing the PSMN2R0-60PS datasheet, PSMN2R0-60PS pinout, PSMN2R0-60PS application, or PSMN2R0-60PS equivalent, key selection criteria include its low R_DS(on) at elevated temperature, robust avalanche energy rating (913 mJ), TO-220 mounting-base thermal path (R_th(j-mb) = 0.22 K/W typ), and standard-level gate drive compatibility with 10 V logic.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low on-resistance while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (V_GS(th)) ranges from 1 V at 175 °C to 4.6 V at –55 °C, enabling stable turn-on across wide temperature extremes.

The device features an integrated body diode with 57–75 ns reverse recovery time and 80–104 nC recovered charge, supporting synchronous rectification and freewheeling in hard-switched topologies. Its dynamic parameters-including 137–192 nC total gate charge and 32–45 nC gate-drain charge-are specified under realistic conditions (V_DS = 30 V, I_D = 75 A, V_GS = 10 V).

Key Specifications

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3 leads, 2.54 mm pitch, 15.6 × 10 × 4.4 mm body. Mounting base (mb) is electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N6F7 and IRF1404ZLPbF, PSMN2R0-60PS offers the lowest R_DS(on) in TO-220AB with verified 175 °C qualification and optimal Q_G/R_DS(on) ratio-making it the preferred choice for thermally demanding, high-current industrial switching where both efficiency and ruggedness are critical.

Availability

PSMN2R0-60PS is available at Aetrix Electronics and suitable for DC-to-DC converters, motor control inverters, and server power supply OR-ing circuits requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PSMN2R0-60PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for industrial and automotive markets.

This part belongs to Nexperia's "TrenchMOS" standard-level power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power conversion, motor drives, and infrastructure equipment where thermal robustness and avalanche reliability are mandatory.

FAQ

What is the maximum continuous drain current for PSMN2R0-60PS at 100 °C mounting base temperature?

The datasheet specifies 120 A continuous drain current at T_mb = 100 °C with proper heatsinking. This value is limited by package thermal capacity-not silicon-so actual current must be validated against measured T_mb and ambient airflow. Derating applies above 100 °C; at T_mb = 125 °C, maximum I_D drops to approximately 95 A per Figure 2.

Is PSMN2R0-60PS suitable for avalanche operation in inductive load switching?

Yes-it is fully characterized for unclamped inductive switching with E_AS = 913 mJ at T_j(init) = 25 °C, ID = 120 A, V_sup ≤ 60 V, and R_GS = 50 Ω. This rating enables reliable operation in motor phase-leg freewheeling and relay/snubberless solenoid driving without external protection components.

Does the mounting base require electrical isolation when used in high-side configurations?

Yes-the mounting base (mb) is internally connected to the drain terminal. In high-side switch configurations, the heatsink must be electrically insulated from chassis ground using mica or ceramic washers and isolated mounting hardware to prevent short circuits and ensure safe operation.

How does R_DS(on) change with junction temperature, and what is its value at 100 °C?

R_DS(on) increases with temperature: 2.2 mΩ typ at 25 °C, 3.0–3.5 mΩ max at 100 °C, and 4.3–5.1 mΩ max at 175 °C. At 100 °C, the typical value is 3.0 mΩ (Figure 12), resulting in ~2.25× higher conduction loss than at room temperature-critical for thermal design margining.