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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R1-40PLQ

Name: PSMN2R1-40PLQ
Brand: Nexperia USA Inc.
SKU: PSMN2R1-40PLQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R1-40PLQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN2R1-40PLQ.pdf

Description:: MOSFET N-CH 40V 150A TO220AB

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Product details

Overview

PSMN2R1-40PL from Nexperia is a logic-level N-channel MOSFET in TO-220AB (SOT78) package, optimized for high-current battery-powered power tools. It delivers 40 V drain-source voltage rating, 2.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 25 A, 150 A continuous drain current (package-limited), and 490.3 mJ unclamped avalanche energy - enabling robust motor control and load switching in portable high-power systems.

For engineers reviewing the PSMN2R1-40PL datasheet, PSMN2R1-40PL pinout, PSMN2R1-40PL application, or PSMN2R1-40PL equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, 168.9 nC total gate charge, junction-to-mounting-base thermal resistance of 0.44 K/W, and SOT78 mechanical compatibility with heatsink mounting for sustained 150 A operation.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low conduction losses while maintaining ruggedness under repetitive and unclamped avalanche stress. Its logic-level gate threshold (V_GS(th) = 1.4–2.1 V typ.) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting, and its 0.44 K/W R_th(j-mb) supports high-power dissipation when mounted on a heatsink.

The device features integrated body diode with 45 ns reverse recovery time and 62 nC recovered charge, suitable for freewheeling in brushed DC motor H-bridge topologies. Its SOA is rated up to 1075 A peak drain current (10 µs pulse) and maintains stable R_DS(on) up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36 V nominal battery packs in cordless power tools.
R_DS(on)	2.2 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 150 A, critical for thermal management in compact tools.
I_D (cont)	150 A @ T_mb = 25 °C - Package-limited continuous current; derates to zero at ~100 °C mounting base temperature per Fig. 1.
Q_G(tot)	168.9 nC - Gate charge value defining required driver strength and switching loss in PWM motor control at 20–50 kHz.
E_AS	490.3 mJ - Non-repetitive avalanche energy rating ensures survivability during inductive load turn-off transients in motor drives.
R_th(j-mb)	0.44 K/W - Thermal resistance from junction to mounting base; enables >200 W steady-state power dissipation with 100 K ΔT to heatsink.
V_GS(th)	1.7 V typ. @ I_D = 1 mA - Logic-level threshold allows full enhancement from 3.3 V MCU GPIO, eliminating external gate drivers.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted backplate, 1 mounting hole, and 3 leads. Mounting base (mb) serves as thermal and electrical connection to drain (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level input (3.3 V/5 V); requires <170 nC charge for full turn-on.
2	D (Drain)	Main power output node; electrically and thermally connected to mounting base; must be isolated from PCB ground plane.
3	S (Source)	Power return path and reference for gate drive; connects to low-side switch node or current-sense resistor.

Key Features

Feature	Design Value
Logic-level gate drive	Full enhancement at V_GS = 4.5 V (R_DS(on) ≤ 2.6 mΩ), enabling direct MCU interface without level shifters.
TrenchMOS technology	Optimized cell structure delivering 2.2 mΩ R_DS(on) in TO-220AB - 30% lower than planar equivalents at same voltage class.
Avalanche-rated design	490.3 mJ unclamped E_AS ensures reliable operation during inductive flyback in motor commutation without snubbers.
Low Q_GD/Q_G ratio	29.6 nC / 168.9 nC = 17.5% - Reduces Miller-induced shoot-through risk in half-bridge configurations.
Integrated body diode	45 ns t_rr, 62 nC Q_r - Supports efficient freewheeling in brushed DC motor H-bridges with minimal reverse recovery loss.

Applications

Battery-Powered Power Tools

High-Current Load Switching

Use Scenario: Cordless drill/driver main motor switch in 18–40 V Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling brushed DC motor current up to 150 A peak.

Use Value: 2.2 mΩ R_DS(on) minimizes heat generation during stall conditions, extending tool runtime and preventing thermal shutdown.

Use Scenario: Solid-state replacement for electromechanical relays in industrial battery disconnect systems.

IC Role / Device Role / Timing Role: Bidirectional load switch managing 40 V/100 A DC bus isolation and sequencing.

Use Value: 150 A continuous rating and 1075 A pulsed capability enable single-device replacement of dual-relay banks with faster response and no contact wear.

Motor Control in Portable Equipment

Uninterruptible Power Supplies (UPS)

Use Scenario: Low-voltage BLDC or brushed motor in handheld medical devices and robotic end-effectors.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 20–50 kHz PWM-driven motor drivers.

Use Value: 168.9 nC Q_G(tot) and 96 ns rise time support efficient switching with standard gate drivers like TC4427 or UCC27531.

Use Scenario: Battery-to-inverter transfer switch in 24–48 V offline UPS systems with backup runtime >5 min.

IC Role / Device Role / Timing Role: Main DC bus switch isolating battery during AC mains operation and enabling seamless switchover.

Use Value: 490.3 mJ avalanche energy withstands inductive kickback from inverter transformer during fault transitions without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_G = 131 nC; V_DS = 40 V; TO-220 package	Higher conduction loss (≈2×), lower gate charge - better for lower-frequency, higher-voltage margin applications	Select when cost sensitivity outweighs efficiency needs and thermal headroom exists.
STP120N4F6	R_DS(on) = 2.4 mΩ @ 10 V; Q_G = 145 nC; V_DS = 40 V; TO-220FP (full-pack) variant	Similar R_DS(on) but higher thermal resistance (R_th(j-mb) ≈ 0.7 K/W), limiting continuous current to ~110 A	Choose only if footprint compatibility with TO-220FP is mandatory and peak currents remain <110 A.

Compared with IRF1404PBF and STP120N4F6, PSMN2R1-40PL offers the lowest R_DS(on) and best thermal performance in standard TO-220AB, making it optimal for space-constrained, high-efficiency battery tools where 150 A continuous operation and avalanche robustness are required.

Availability

PSMN2R1-40PL is available at Aetrix Electronics and suitable for battery-powered power tools, high-current load switching, motor control in portable equipment, and uninterruptible power supplies requiring stable component supply across production lifecycles.

Supply support for PSMN2R1-40PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process innovation and automotive-grade quality systems.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in portable battery-operated equipment where thermal density and gate-drive simplicity are critical.

FAQ

Is PSMN2R1-40PL suitable for 3.3 V microcontroller gate drive?

Yes. With a typical gate threshold voltage of 1.7 V and guaranteed enhancement at V_GS = 4.5 V (R_DS(on) ≤ 2.6 mΩ), it fully turns on using standard 3.3 V GPIO outputs. However, for lowest R_DS(on) (2.2 mΩ), a 10 V gate drive is recommended - a simple charge-pump or dual-supply gate driver may be used where efficiency is paramount.

What is the maximum continuous current at 80 °C mounting base temperature?

Per Figure 1 in the datasheet, continuous drain current drops to approximately 90 A at T_mb = 80 °C. This derating reflects thermal limits of the TO-220AB package and must be verified with actual heatsink design and ambient conditions. At T_mb = 100 °C, current is capped at 0 A - confirming strict thermal dependency.

Can PSMN2R1-40PL replace older MOSFETs in existing TO-220 designs without layout changes?

Yes. It uses the standard TO-220AB (SOT78) outline with identical pinout (G-D-S), lead spacing, and mounting hole location. Mechanical compatibility is confirmed by Figure 17 in the datasheet. Electrical improvements - lower R_DS(on), higher avalanche rating, and logic-level drive - provide drop-in performance upgrades without PCB revision.

Does this MOSFET have an integrated ESD protection diode on the gate?

No. The datasheet does not specify gate ESD protection. Absolute maximum V_GS is ±20 V, and gate leakage is specified at ±10 V. External gate protection (e.g., 12 V Zener clamp to source) is strongly advised in production systems exposed to handling or system-level ESD events.

PSMN2R1-40PLQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 87.8 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9584 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 293W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN2R1-40PLQ FAQ

1.How can I place an order for PSMN2R1-40PLQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R1-40PLQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R1-40PLQ reliable?

The price and inventory of PSMN2R1-40PLQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R1-40PLQ is usually 5 days.

3.What payment methods are accepted for PSMN2R1-40PLQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R1-40PLQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R1-40PLQ?

PSMN2R1-40PLQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R1-40PLQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R1-40PLQ?

For technical support, including PSMN2R1-40PLQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R1-40PLQ requirements.

6.How does Aetrix verify that PSMN2R1-40PLQ is sourced from the original manufacturer or authorized distributors?

All PSMN2R1-40PLQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R1-40PLQ meets industry standards.

7.What is the process for return or replacement of PSMN2R1-40PLQ?

All PSMN2R1-40PLQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R1-40PLQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R1-40PLQ part is unused and in its original packaging.

Return procedure for PSMN2R1-40PLQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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