Nexperia USA Inc. PSMN2R2-25YLC,115

Overview

PSMN2R2-25YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 25 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V and 25 A, and qualified to 175 °C junction temperature. It employs NextPower Superjunction technology, optimized for 4.5 V gate drive, and delivers ultra-low Q_G (18 nC), Q_GD (5.2 nC), and Q_OSS (16.7 nC) - enabling high-efficiency operation in synchronous rectification and DC-DC converters.

For engineers reviewing the PSMN2R2-25YLC datasheet, PSMN2R2-25YLC pinout, PSMN2R2-25YLC application, or PSMN2R2-25YLC equivalent, this device is selected for high-current, low-voltage switching where thermal robustness, fast switching, and low conduction loss are critical - especially in server power supplies and lithium-ion battery protection circuits requiring stable 4.5 V gate drive compatibility.

Technical Context

This MOSFET uses Nexperia's NextPower Superjunction architecture to achieve ultra-low gate charge and on-resistance while maintaining rugged avalanche capability (60 mJ unclamped). Its static characteristics include V_GS(th) of 1.05–1.95 V at 25 °C and R_DS(on) that remains ≤5.05 mΩ up to 150 °C, supporting reliable operation across industrial temperature ranges.

The device features a 4-pin LFPAK (SOT669) layout with three parallel source terminals and an exposed mounting base tied to drain, enabling low-inductance, high-current PCB routing and efficient thermal transfer to heatsinks. Dynamic parameters - including t_d(on) = 24 ns, t_r = 34 ns, C_iss = 2542 pF, and C_oss = 617 pF - reflect optimization for high-frequency switching in hard-switched topologies.

Key Specifications

Pinout & Package

PSMN2R2-25YLC uses the LFPAK (SOT669 / Power-SO8) package: a surface-mount, single-ended plastic package with an exposed copper mounting base for enhanced thermal and electrical performance. The base is internally connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLHS6242PBF and DMT6006LPS-13, PSMN2R2-25YLC offers the lowest R_DS(on) and gate charge in its 25 V class, with superior thermal performance via LFPAK's mounting base - making it optimal for high-current, thermally dense applications where efficiency and reliability outweigh footprint constraints.

Availability

PSMN2R2-25YLC is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, DC-DC converters, and power OR-ing applications requiring stable component supply, long-term industrial qualification, and consistent parametric performance across production lots.

Supply support for PSMN2R2-25YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic components for automotive, industrial, and computing markets.

This device belongs to Nexperia's NextPower Superjunction MOSFET product line - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and battery-powered equipment where low R_DS(on), low Q_G, and 175 °C operation are mandatory.

FAQ

What is the maximum continuous drain current for PSMN2R2-25YLC?

The maximum continuous drain current is 100 A at T_mb = 25 °C, limited by package thermal capability rather than silicon. At T_mb = 100 °C, it remains 100 A due to the LFPAK's robust thermal design. Derating follows Figure 1 in the datasheet, with usable current dropping to ~60 A at T_mb = 125 °C.

Can PSMN2R2-25YLC be driven directly from a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) is 1.05–1.95 V at 25 °C, and R_DS(on) is specified down to 2.6 mΩ at V_GS = 4.5 V. While full enhancement occurs at ≥4.5 V, the device conducts meaningfully at 3.3 V (R_DS(on) ≈ 5–7 mΩ), making it usable in low-duty-cycle or low-current roles; for full performance, a 5 V gate driver is recommended.

Does PSMN2R2-25YLC have avalanche capability, and how is it rated?

Yes - it is rated for 60 mJ non-repetitive drain-source avalanche energy (E_AS) under unclamped inductive switching conditions (V_GS = 10 V, I_D = 100 A, T_j(init) = 25 °C). This rating is validated per JEDEC JESD24-11 and confirms ruggedness against transient overvoltage events in hard-switched topologies.

How is thermal management implemented in the LFPAK package?

The LFPAK package uses an exposed copper mounting base (pin mb) electrically connected to drain and thermally bonded to the PCB's thermal pad. With R_th(j-mb) = 1.25 K/W, heat flows directly from junction to board - enabling >80 W power dissipation using a 25 mm² 2-oz copper pad and minimal thermal vias, without requiring external heatsinks in many applications.