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Nexperia USA Inc. PSMN2R2-40BS,118

Name: PSMN2R2-40BS,118
Brand: Nexperia USA Inc.
SKU: PSMN2R2-40BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R2-40BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN2R2-40BS,118.pdf

Description:: MOSFET N-CH 40V 100A D2PAK

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Product details

Overview

PSMN2R2-40BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 40 V V_DS, 2.2 mΩ R_DS(on) at T_j = 25 °C and 100 A continuous drain current at T_mb = 25 °C. It delivers high efficiency in high-current switching applications such as server power supplies and motor control, with 175 °C junction temperature rating and robust unclamped avalanche capability (1.24 J).

For engineers reviewing the PSMN2R2-40BS datasheet, PSMN2R2-40BS pinout, PSMN2R2-40BS application, or PSMN2R2-40BS equivalent, key selection criteria include its low R_DS(on) at elevated temperature, gate-drive compatibility with standard 10 V logic, thermal resistance to mounting base (0.25–0.5 K/W), and suitability for high-pulse-current operation (962 A peak).

Technical Context

This MOSFET uses planar silicon technology optimized for low conduction loss and fast switching in hard-switched DC-to-DC converters and load-switching circuits. Its gate threshold voltage (2–4 V typ.) ensures reliable turn-on with standard logic-level drivers while maintaining noise immunity.

The device features an integrated source-drain diode with 0.85–1.2 V forward voltage and 53.7 ns reverse recovery time, enabling synchronous rectification and freewheeling in half-bridge topologies. Its 8423 pF input capacitance and 130 nC total gate charge support efficient gate driving at moderate frequencies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines upper limit for bus voltage in 12 V/24 V/36 V industrial and server power rails.
R_DS(on)	2.2 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages.
I_D (cont)	100 A @ T_mb = 25 °C - Sustains high output current in compact PCB-mounted designs when heatsinked to mounting base.
E_AS	1.24 J (unclamped) - Withstands single-event inductive energy spikes without failure, supporting robust motor drive and relay-switching protection.
R_th(j-mb)	0.25–0.5 K/W - Low thermal resistance enables direct copper pad mounting to heatsinks, reducing junction-to-heatsink delta-T by >50 % vs. TO-220.
Q_G(tot)	130 nC @ V_DS = 20 V, I_D = 25 A - Determines gate driver current requirement (~1.3 A avg. for 100 ns rise time); compatible with common half-bridge drivers.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures clean turn-on with 3.3 V/5 V microcontroller outputs and avoids shoot-through in bridge configurations.

Pinout & Package

PSMN2R2-40BS is housed in a plastic single-ended surface-mounted D2PAK package (SOT404), featuring a large exposed mounting base for thermal conduction and mechanical stability. Pin 2 is internally connected to the drain but not externally accessible - only pins 1 (Gate), 3 (Source), and the mounting base (Drain) are functional terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 10 V logic-level drive; 1 Ω internal gate resistance limits ringing and simplifies snubber design.
3 (S)	Source	Power return path and reference for gate drive; tied to PCB ground plane for low-inductance layout in high-dI/dt applications.
Mounting base	Drain	Primary high-current drain connection and thermal interface; requires soldered copper area ≥10 cm² for rated 306 W dissipation.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V - eliminates need for gate boosters in 12 V systems and reduces BOM cost vs. logic-level parts.
High-temperature junction rating	175 °C maximum T_j - supports operation in sealed enclosures or high-ambient environments (e.g., telecom rectifiers, industrial PLCs).
Low R_DS(on) temperature coefficient	R_DS(on) increases only 1.9× from 25 °C to 175 °C - maintains stable current sharing in paralleled configurations without active balancing.
Robust avalanche ruggedness	1.24 J unclamped E_AS - withstands worst-case inductive turn-off events in motor drives and solenoid controls without derating.
Optimized dynamic characteristics	25 nC Q_GD / 130 nC Q_G(tot) ratio - balances switching speed and EMI, enabling clean 200 kHz operation in LLC resonant converters.

Applications

Server Power Supplies

DC-to-DC Converters

Use Scenario: Primary-side synchronous rectification and secondary-side high-current buck stages in 48 V–12 V intermediate bus converters.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling up to 100 A continuous current with minimal conduction loss.

Use Value: Achieves >95 % efficiency at full load due to 2.2 mΩ R_DS(on) and low gate charge, reducing thermal management complexity.

Use Scenario: Step-down conversion in industrial programmable logic controllers (PLCs) and distributed I/O modules.

IC Role / Device Role / Timing Role: Main switching FET in 200–500 kHz buck regulators powering FPGA, DSP, and sensor subsystems.

Use Value: Fast 40.4 ns rise time and 25.2 ns fall time enable precise PWM control with minimal dead-time loss.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V brushed DC motor drivers for factory automation actuators and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switch managing bidirectional current up to 100 A during PWM commutation and regenerative braking.

Use Value: Integrated source-drain diode with 53.7 ns t_rr minimizes freewheeling losses and eliminates external Schottky requirement.

Use Scenario: Hot-swap and inrush current limiting in 12 V/24 V backplane power distribution units (PDUs) and network switches.

IC Role / Device Role / Timing Role: Single-pole high-current electronic fuse protecting downstream circuitry from overloads and short circuits.

Use Value: 962 A pulsed peak current rating allows safe handling of capacitor charging surges without SOA violation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	40 V, 4 mΩ R_DS(on), TO-220 package, 162 A I_D (T_c = 25 °C)	Higher R_DS(on) and larger thermal resistance (0.9 K/W) reduce efficiency in space-constrained layouts.	Prefer when legacy TO-220 footprint is required and thermal budget allows higher conduction loss.
STP110N4F6	40 V, 3.2 mΩ R_DS(on), TO-220FP package, 110 A I_D, 175 °C T_j	Lacks documented avalanche energy rating; lower Q_G (95 nC) improves switching but increases dV/dt sensitivity.	Choose for lower gate drive power in high-frequency SMPS where avalanche stress is absent.

Compared with IRF1404PBF and STP110N4F6, PSMN2R2-40BS offers superior thermal performance via D2PAK mounting base, verified 1.24 J avalanche capability for inductive loads, and tighter R_DS(on) tolerance - making it optimal for high-reliability, high-density industrial power stages.

Availability

PSMN2R2-40BS is available at Aetrix Electronics and suitable for server power supplies, motor control systems, and industrial DC-to-DC converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN2R2-40BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's standard-level Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion, motor drives, and infrastructure equipment.

FAQ

Is PSMN2R2-40BS suitable for gate drive with 5 V microcontrollers?

No - its gate threshold voltage range is 2–4 V, but full enhancement requires V_GS ≥ 10 V to achieve rated 2.2 mΩ R_DS(on). Driving with 5 V yields significantly higher on-resistance (>10 mΩ), increasing conduction loss and thermal stress. Use with 10 V gate drivers or level-shifted logic interfaces.

What is the maximum PCB copper area needed for thermal performance?

To sustain 306 W total power dissipation at T_mb = 25 °C, the mounting base must be soldered to ≥10 cm² of 2 oz copper on an inner layer, with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to solid ground planes. Smaller areas increase R_th(j-mb) beyond 0.5 K/W, derating current capability.

Does PSMN2R2-40BS have a built-in body diode? Can it be used for synchronous rectification?

Yes - it integrates a source-drain diode with 0.85–1.2 V forward voltage and 53.7 ns reverse recovery time. While usable for freewheeling, its Q_r = 80.75 nC and soft recovery make it less optimal than dedicated synchronous rectifier MOSFETs; best applied in non-critical, medium-frequency (<300 kHz) buck converters.

How does its avalanche rating compare to automotive-grade MOSFETs?

PSMN2R2-40BS specifies 1.24 J unclamped avalanche energy under defined test conditions (V_GS = 10 V, I_D = 100 A, R_GS = 50 Ω), but it is not AEC-Q101 qualified. Automotive parts undergo extended stress testing and tighter parameter distributions; this device is intended for industrial use where controlled inductive loads exist and system-level protection is implemented.

PSMN2R2-40BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8423 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN2R2-40BS,118 FAQ

1.How can I place an order for PSMN2R2-40BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R2-40BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R2-40BS,118 reliable?

The price and inventory of PSMN2R2-40BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R2-40BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN2R2-40BS,118?

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4.How is shipping managed for PSMN2R2-40BS,118?

PSMN2R2-40BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R2-40BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R2-40BS,118?

For technical support, including PSMN2R2-40BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R2-40BS,118 requirements.

6.How does Aetrix verify that PSMN2R2-40BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN2R2-40BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R2-40BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN2R2-40BS,118?

All PSMN2R2-40BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R2-40BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R2-40BS,118 part is unused and in its original packaging.

Return procedure for PSMN2R2-40BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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