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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R2-40YSBX

Name: PSMN2R2-40YSBX
Brand: Nexperia USA Inc.
SKU: PSMN2R2-40YSBX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R2-40YSBX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R2-40YSBX.pdf

Description:: PSMN2R2-40YSB/SOT669/LFPAK

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Product details

Overview

PSMN2R2-40YSBX from Nexperia is an N-channel 40 V, 2.2 mΩ R_DS(on), 180 A standard-level power MOSFET in LFPAK56 (SOT669) package, using NextPowerS3 Schottky-Plus technology. It delivers high-current switching in DC-DC converters and motor drives, with 100% avalanche testing at 160 A and 175 °C junction rating.

For engineers reviewing the PSMN2R2-40YSBX datasheet, PSMN2R2-40YSBX pinout, PSMN2R2-40YSBX application, or PSMN2R2-40YSBX equivalent, key selection criteria include its 0.81 K/W junction-to-mounting-base thermal resistance, low 6.7 nC typical Q_GD, soft-recovery Schottky-Plus body diode, and wave-solderable exposed leads for industrial load-switch and eFuse designs.

Technical Context

This MOSFET employs TrenchMOS Superjunction architecture optimized for EMC performance-delivering up to 6 dB improvement-and integrates a Schottky-Plus body diode with 0.8 V typical V_SD and 29 ns t_rr. Its gate threshold voltage is 2.9 V (typ), with -7.1 mV/K temperature coefficient, enabling stable operation across -55 °C to 175 °C.

The device supports standard-level 10 V gate drive, achieves 49 nC typical total gate charge, and maintains 4.3 mΩ maximum R_DS(on) at 175 °C and 25 A-critical for high-temperature linear-mode SOA applications such as inrush management and hot-swap circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V max - defines safe blocking capability in 36 V nominal systems like 48 V battery isolation and BLDC inverters.
R_DS(on)	1.9–2.2 mΩ @ 10 V, 25 A, 25 °C - enables <1.1 W conduction loss at 150 A, reducing heatsink requirements.
I_D	180 A continuous @ T_mb = 25 °C - validated in application tests; limited in practice by PCB copper area and thermal design.
Q_GD	2–13.4 nC - low gate-drain charge minimizes Miller-induced switching instability and EMI in hard-switched topologies.
t_r/t_f	9 ns / 12 ns - fast, controlled transitions support >500 kHz operation in high-efficiency synchronous rectifiers.
V_SD	0.8 V typ @ 25 A - low forward voltage of integrated Schottky-Plus diode reduces freewheeling losses in buck and half-bridge stages.
R_th(j-mb)	0.81 K/W typ - enables direct mounting to heatsinks or copper planes, supporting >100 W dissipation without external thermal interface material.

Pinout & Package

LFPAK56 (SOT669) is a copper-clip, solder-die-attached Power-SO8 variant with exposed mounting base connected to drain, offering 40% lower parasitic inductance than DPAK and visual solder-joint inspection capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce current density and package inductance; enable low-impedance Kelvin sensing in precision current monitoring.
4	Gate (G)	Single gate input with 0.9 Ω typical gate resistance-optimized for 5 Ω external gate resistor to balance switching speed and ringing suppression.
Mounting Base (mb)	Drain (D)	Exposed copper drain pad provides primary thermal path and electrical connection; requires solder mask-defined thermal land per Fig. 18/19.

Key Features

Feature	Design Value
NextPowerS3 Schottky-Plus body diode	29 ns t_rr, 20 nC Q_r, and soft recovery eliminate voltage spikes during commutation in bidirectional DC-DC stages.
Avalanche ruggedness	100% tested at I_AS = 160 A - ensures robustness against inductive turn-off transients in motor control and eFuse fault clearing.
Strong SOA rating	Linear-mode capable up to 100 V × 10 A × 10 ms - supports active current limiting in hot-swap controllers without secondary protection.
EMC-optimized layout	6 dB lower radiated emissions vs. prior generation - reduces need for ferrite beads and shielding in space-constrained robotics and cobot drives.
Wave-solderable leads	Exposed S/G terminals compatible with standard wave soldering - enables high-yield, low-cost assembly in industrial power modules and battery management systems.

Applications

Brushless DC Motor Control

Battery Isolation

Use Scenario: High-power 48 V BLDC inverter stage for collaborative robot joint actuators.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge, handling 150 A peak phase current with <100 ns dead-time tolerance.

Use Value: 2.2 mΩ R_DS(on) and 0.81 K/W R_th(j-mb) maintain junction temperature below 150 °C at 10 kHz PWM, eliminating forced air cooling.

Use Scenario: Bidirectional 48 V battery disconnect switch in energy storage systems with fault-clearing requirement.

IC Role / Device Role / Timing Role: Main isolation FET with integrated Schottky-Plus diode enabling reverse-current freewheeling during short-circuit events.

Use Value: 160 A avalanche rating and 253 mJ single-pulse E_AS allow safe interruption of 200 A fault currents without external TVS clamping.

Industrial Load-Switch

Inrush Management

Use Scenario: Programmable 12–48 V industrial PLC output module driving solenoids and relays.

IC Role / Device Role / Timing Role: High-current load switch with precise current limiting via external sense resistor and gate driver feedback loop.

Use Value: Linear-mode SOA supports 100 A × 100 ms overload without thermal runaway, enabling Class 2 compliance without derating.

Use Scenario: Hot-swap controller for modular server power supplies with 200 A inrush current suppression.

IC Role / Device Role / Timing Role: Controlled ramp-up FET in series with bulk capacitor bank, driven by dedicated hot-swap IC with dV/dt control.

Use Value: Low Q_G (49 nC) and tight V_GS(th) distribution (2.4–3.6 V) ensure predictable turn-on timing and minimal voltage overshoot during capacitive charging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	2.6 mΩ R_DS(on), TO-252 package, no Schottky-Plus diode (t_rr = 45 ns)	Limited to unidirectional loads; higher EMI in freewheeling phases	Prefer when cost sensitivity outweighs EMC and bidirectional conduction needs
Vishay SiR626DP	2.3 mΩ R_DS(on), PowerPAK SO-8, Q_GD = 10.5 nC, V_SD = 1.1 V	Higher body-diode VF increases conduction loss in synchronous rectification	Choose where board space constraints favor smaller footprint over thermal performance

Compared with PSMN2R2-40YSBX, IPP026N04L trades avalanche robustness and diode softness for lower unit cost, while SiR626DP sacrifices thermal efficiency (0.95 K/W vs. 0.81 K/W) to fit tighter layouts-making PSMN2R2-40YSBX optimal for thermally demanding, high-reliability industrial switching.

Availability

PSMN2R2-40YSBX is available at Aetrix Electronics and suitable for brushless DC motor control, battery isolation, and industrial load-switch applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for PSMN2R2-40YSBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

This device belongs to Nexperia's NextPowerS3 portfolio-engineered specifically for high-efficiency, high-reliability power switching in robotics, eMobility, and industrial automation where EMC, thermal resilience, and avalanche safety are critical.

FAQ

What is the maximum continuous drain current for PSMN2R2-40YSBX under real-world PCB conditions?

The datasheet specifies 180 A continuous current at T_mb = 25 °C, but practical limits depend on thermal design: with 25.4 mm² 70 µm copper on FR4, sustained current drops to ~139 A at T_mb = 100 °C. For 150 A operation, a 50 mm² thermal pad and 2-layer 2 oz copper are recommended to hold T_j ≤ 150 °C.

Can PSMN2R2-40YSBX be used in synchronous rectification with its integrated body diode?

Yes-the Schottky-Plus body diode has 0.8 V typical V_SD, 29 ns t_rr, and soft recovery, making it suitable for synchronous rectification in buck converters up to 300 kHz. However, external synchronous FETs remain preferred above 500 kHz due to gate drive timing constraints and Q_r-induced shoot-through risk.

Is the mounting base electrically isolated from the PCB in the LFPAK56 package?

No-the mounting base is internally connected to the drain terminal and must be soldered to a drain net on the PCB. It is not insulated; isolation requires external creepage/clearance design or use of insulating thermal pads, which degrade R_th(j-mb) by ≥0.3 K/W.

Does PSMN2R2-40YSBX require gate resistors for stability in hard-switched applications?

Yes-a 5 Ω external gate resistor is recommended per Nexperia's evaluation data to dampen ringing caused by low package inductance (≈1.2 nH) and prevent false turn-on from dv/dt coupling. Values below 3 Ω increase EMI; above 10 Ω extend switching losses beyond acceptable levels for 100 kHz+ operation.

PSMN2R2-40YSBX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5173 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R2-40YSBX FAQ

1.How can I place an order for PSMN2R2-40YSBX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R2-40YSBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R2-40YSBX reliable?

The price and inventory of PSMN2R2-40YSBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R2-40YSBX is usually 5 days.

3.What payment methods are accepted for PSMN2R2-40YSBX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R2-40YSBX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R2-40YSBX?

PSMN2R2-40YSBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R2-40YSBX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R2-40YSBX?

For technical support, including PSMN2R2-40YSBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R2-40YSBX requirements.

6.How does Aetrix verify that PSMN2R2-40YSBX is sourced from the original manufacturer or authorized distributors?

All PSMN2R2-40YSBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R2-40YSBX meets industry standards.

7.What is the process for return or replacement of PSMN2R2-40YSBX?

All PSMN2R2-40YSBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R2-40YSBX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R2-40YSBX part is unused and in its original packaging.

Return procedure for PSMN2R2-40YSBX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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