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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R2-40YSDX

Name: PSMN2R2-40YSDX
Brand: Nexperia USA Inc.
SKU: PSMN2R2-40YSDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R2-40YSDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R2-40YSDX.pdf

Description:: MOSFET N-CH 40V 180A LFPAK56

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Product details

Overview

PSMN2R2-40YSD from Nexperia is an N-channel standard-level MOSFET in LFPAK56 (SOT669) package, rated 40 V V_DS, 2.2 mΩ R_DS(on) at V_GS = 10 V and 25 A, 180 A continuous drain current at T_mb = 25 °C, and qualified for 175 °C operation. It delivers high-efficiency synchronous rectification and load switching in DC-DC converters and BLDC motor drives.

For engineers reviewing the PSMN2R2-40YSD datasheet, PSMN2R2-40YSD pinout, PSMN2R2-40YSD application, or PSMN2R2-40YSD equivalent, key selection criteria include its 1.9–2.2 mΩ R_DS(on) at 25 °C, 45 nC typical Q_G(tot), Schottky-Plus body diode with 29 ns t_rr, and LFPAK56 copper-clip thermal performance enabling high-current, low-EMI power stages.

Technical Context

This MOSFET employs Nexperia's NextPower-S3 Superjunction TrenchMOS technology, integrating a Schottky-Plus body diode with soft reverse recovery (t_rr = 29 ns, Q_r = 21 nC) and low V_SD (0.8–1.0 V at 25 A). Its gate threshold voltage is 2.4–3.6 V with -6.3 mV/K temperature coefficient, supporting robust standard-level drive compatibility.

The device features a 4-terminal LFPAK56 package with three parallel source pins, one gate pin, and a thermally enhanced mounting base connected to drain. Thermal resistance from junction to mounting base is 0.8–0.9 K/W, enabling high-power dissipation (166 W at T_mb = 25 °C) without external heatsinking in optimized PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - supports 36 V nominal bus systems with 10% margin for transients
R_DS(on)	1.9–2.2 mΩ at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.5 W conduction loss at 80 A
I_D (cont)	180 A at T_mb = 25 °C - validated for high-current synchronous rectifier legs in server VRMs
Q_G(tot)	29–63 nC (typ. 45 nC) - balances fast switching (t_f = 10 ns) with gate driver stress
t_rr / Q_r	29 ns / 21 nC - minimizes body-diode switching loss and EMI in hard-commutated topologies
R_th(j-mb)	0.8–0.9 K/W - allows direct thermal coupling to copper planes for >150 W sustained power handling
V_GS(th)	2.4–3.6 V - ensures reliable turn-on with 5 V logic or standard PWM controllers

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with exposed copper mounting base, copper-clip die attach, and wave-solderable leads. It provides low parasitic inductance (<1.5 nH) and resistance, and visual solder-joint inspection capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source connections - reduce common-source inductance in high-dI/dt switching
4	Gate (G)	Single gate input - compatible with standard gate drivers; RG = 0.4–2.3 Ω internal
Mounting Base (mb)	Drain (D)	Exposed drain pad - serves as primary thermal path and high-current drain connection; electrically tied to drain

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft recovery (t_a = 16 ns, t_b = 13 ns), low V_SD (0.8 V @ 25 A), and 21 nC Q_r reduce switching loss and EMI in freewheeling paths
Avalanche ruggedness	100% tested at I_AS = 160 A - enables reliable operation under inductive load turn-off stress without external snubbers
Strong SOA rating	Linear-mode capable up to 100 V × 10 A (1 ms pulse) - supports hot-swap and inrush limiting with controlled power dissipation
175 °C qualified LFPAK56	Copper-clip construction and solder die attach ensure long-term reliability at junction temperatures up to 175 °C in automotive and industrial environments
Low Q_GD/Q_G ratio	Q_GD = 1.8–12 nC (typ. 6.1 nC) vs. Q_G(tot) = 45 nC - improves Miller immunity and dV/dt ruggedness in high-side configurations

Applications

High-Performance Synchronous Rectification

DC-to-DC Converters

Use Scenario: Secondary-side switch in 48 V–12 V isolated buck converters for AI accelerators and telecom rectifiers.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diodes; operates in phase with primary-side PWM at 300–600 kHz.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky diodes, enabling >96% efficiency at 100 A output with minimal thermal derating.

Use Scenario: High-current POL (point-of-load) regulator in server CPU/GPU VRMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch in multiphase buck topology; driven by dedicated gate controller.

Use Value: 2.2 mΩ R_DS(on) and 0.85 K/W R_th(j-mb) allow 180 A continuous current with <10 °C rise over ambient on 4-layer 2 oz Cu board.

Brushless DC Motor Control

Battery Protection & eFuse

Use Scenario: Inverter leg in 24–48 V BLDC drives for industrial pumps and drones.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; commutated at 10–20 kHz with dead-time control.

Use Value: Soft-recovery body diode eliminates shoot-through risk during commutation; avalanche rating handles back-EMF spikes up to 160 A.

Use Scenario: Solid-state eFuse in 12–48 V battery packs for power tools and UPS systems.

IC Role / Device Role / Timing Role: Load-switch element with integrated current sensing and fast fault shutdown via gate control.

Use Value: 180 A continuous rating and strong SOA support 5× overcurrent tolerance for 100 ms; low R_DS(on) minimizes standby loss in always-on protection circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V, 2.6 mΩ, 160 A, TO-220 package; higher R_DS(on), no Schottky-Plus diode (t_rr = 45 ns)	Limited to lower-frequency switching (<200 kHz); requires heatsink due to higher R_th(j-a)	Choose for cost-sensitive, non-high-frequency designs where footprint is not constrained.
Vishay SiR626DP	40 V, 2.1 mΩ, 192 A, PowerPAK SO-8; similar R_DS(on) but 1.2× higher Q_G(tot) (54 nC) and no avalanche testing	Higher gate drive loss in high-frequency (>500 kHz) applications; untested avalanche margin increases design risk	Choose only if LFPAK56 footprint is unavailable and full avalanche validation is not required.

Compared with IPP026N04L and SiR626DP, PSMN2R2-40YSD offers superior thermal performance (0.85 K/W vs. >1.5 K/W), verified avalanche ruggedness (160 A), and softer body-diode recovery-critical for high-efficiency, high-reliability 300–600 kHz power stages.

Availability

PSMN2R2-40YSD is available at Aetrix Electronics and suitable for high-current DC-DC converters, BLDC motor inverters, and battery eFuse applications requiring stable component supply across extended production lifecycles.

Supply support for PSMN2R2-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, high-reliability discrete and logic devices for power, analog, and interface applications.

PSMN2R2-40YSD belongs to the NextPower-S3 family, engineered specifically for high-efficiency, high-current power switching in data center, industrial, and automotive-qualified systems demanding low R_DS(on), soft-recovery diodes, and 175 °C operation.

FAQ

What is the maximum continuous drain current for PSMN2R2-40YSD at 100 °C mounting base temperature?

The datasheet specifies 140 A continuous drain current at T_mb = 100 °C and V_GS = 10 V (Fig. 2). This reflects thermal derating from the 180 A rating at 25 °C, based on measured junction-to-mounting-base thermal resistance of 0.8–0.9 K/W and silicon SOA limits.

Does PSMN2R2-40YSD support wave soldering, and what are the recommended footprint dimensions?

Yes, the LFPAK56 package is explicitly qualified for wave soldering. The official footprint (Fig. 19) uses 4.826 mm × 1.78 mm solder lands with 1.27 mm pitch and 0.635 mm lead width. Exposed mounting base must be fully soldered to maximize thermal and mechanical reliability.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode in practical operation?

The Schottky-Plus diode achieves 0.8 V forward voltage at 25 A and 29 ns reverse recovery time-half that of conventional trench MOSFETs-with soft recovery (low dI/dt peak). This reduces voltage overshoot, EMI, and cross-conduction risk in synchronous rectifiers and half-bridge topologies.

Is PSMN2R2-40YSD automotive-qualified, and what is its AEC-Q101 status?

No, PSMN2R2-40YSD is not AEC-Q101 qualified. The datasheet explicitly states "Non-automotive qualified products" and prohibits use in safety-critical automotive systems. It is rated for industrial and computing applications with operating T_j up to 175 °C but lacks automotive-specific stress testing and traceability.

PSMN2R2-40YSDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5130 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R2-40YSDX FAQ

1.How can I place an order for PSMN2R2-40YSDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R2-40YSDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R2-40YSDX reliable?

The price and inventory of PSMN2R2-40YSDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R2-40YSDX is usually 5 days.

3.What payment methods are accepted for PSMN2R2-40YSDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R2-40YSDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R2-40YSDX?

PSMN2R2-40YSDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R2-40YSDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R2-40YSDX?

For technical support, including PSMN2R2-40YSDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R2-40YSDX requirements.

6.How does Aetrix verify that PSMN2R2-40YSDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R2-40YSDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R2-40YSDX meets industry standards.

7.What is the process for return or replacement of PSMN2R2-40YSDX?

All PSMN2R2-40YSDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R2-40YSDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R2-40YSDX part is unused and in its original packaging.

Return procedure for PSMN2R2-40YSDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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