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Nexperia USA Inc. PSMN2R4-30MLD/1X
- Part No.:
- PSMN2R4-30MLD/1X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
PSMN2R4-30MLD/1X.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,155
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Product details
Overview
PSMN2R4-30MLD from Nexperia is an N-channel 30 V, 2.4 mΩ logic-level MOSFET in LFPAK33 (SOT1210) package, optimized for 4.5 V gate drive and high-frequency synchronous rectification. It delivers ultra-low QG (16–24 nC), low RDS(on) at 4.5 V (2.6–3.2 mΩ), and Schottky-like soft-recovery (s-factor > 0.97) with < 1 µA leakage at 25 °C - enabling high-efficiency DC-DC conversion in server power supplies.
For engineers reviewing the PSMN2R4-30MLD datasheet, PSMN2R4-30MLD pinout, PSMN2R4-30MLD application, or PSMN2R4-30MLD equivalent, key selection criteria include its 2.4 mΩ RDS(on) @ 10 V, 70 A continuous drain current capability, LFPAK33 thermal resistance (Rth(j-mb) = 1.44–1.65 K/W), and NextPowerS3 SchottkyPlus diode performance for low EMI POL modules.
Technical Context
This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture, achieving soft reverse recovery (trr = 31.2–62.4 ns, Qr = 23.5–47 nC) without elevated leakage. Its gate charge profile (QGD = 5.6–8.4 nC, QG(tot) = 16–24 nC @ 4.5 V) enables fast switching with minimal spiking, supported by low parasitic inductance from clip-bonded die attach and exposed mounting base.
The device operates across -55 °C to 175 °C junction temperature, rated for 30 V VDS, 70 A ID (Tmb = 25 °C), and 91 W Ptot. Its gate threshold voltage (VGS(th) = 1.2–2.2 V) and strong 4.5 V drive optimization make it suitable for logic-level control in high-density VRMs and secondary-side synchronous rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - defines safe blocking capability in 24 V bus applications. |
| RDS(on) @ 10 V | 2.0–2.4 mΩ - enables < 10 mW conduction loss at 50 A, critical for high-current POL efficiency. |
| QG(tot) @ 4.5 V | 16–24 nC - reduces gate drive power and enables >1 MHz switching in telecom DC-DC converters. |
| trr / Qr | 31.2–62.4 ns / 23.5–47 nC - minimizes diode recovery losses and EMI in synchronous rectification. |
| Rth(j-mb) | 1.44–1.65 K/W - allows >70 W power dissipation with moderate heatsinking on PCB mounting base. |
| VGS(th) | 1.2–2.2 V - ensures full enhancement with standard 3.3 V/5 V logic drivers without level-shifting. |
| ID (continuous) | 70 A @ Tmb = 25 °C - supports high-current VRM phases with thermal derating per Fig. 2. |
Pinout & Package
LFPAK33 (SOT1210) is a clip-bonded, solder-die-attached surface-mount package with exposed mounting base connected to drain, optimized for low thermal resistance and visual solder inspection. It features no wire bonds or adhesive, qualified to 175 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with low RG (0.74–1.5 Ω) for stable, fast turn-on/turn-off control. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft recovery (s-factor > 0.97) with < 1 µA leakage at 25 °C - eliminates need for external Schottky while avoiding leakage trade-offs. |
| Ultra-low QG and QGD | QG(tot) = 16–24 nC, QGD = 5.6–8.4 nC @ 4.5 V - enables high-frequency operation (>1 MHz) with minimal gate loss. |
| Optimized 4.5 V drive | RDS(on) = 2.6–3.2 mΩ @ 4.5 V - ensures full enhancement using standard logic-level controllers without boost circuitry. |
| Clip-bonded LFPAK33 | Rth(j-mb) = 1.44–1.65 K/W - delivers 2× better thermal performance than comparable SO-8 MOSFETs for compact power stages. |
| Exposed drain mounting base | Direct thermal and electrical connection to PCB copper - simplifies layout, improves solder joint reliability, and enables visual IPC-compliant inspection. |
Applications
| Server DC-DC Conversion | Telecom Secondary-Side SR |
|---|---|
|
Use Scenario: Point-of-load regulation for CPU/GPU cores in 1U rack servers with 48 V input and sub-1 V output. IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in multiphase buck converter, operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 2.4 mΩ RDS(on) and low QGD reduce conduction + switching losses, improving system efficiency by ≥0.8% vs. legacy MOSFETs at 50 A load. |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V telecom PSUs with tight EMI limits. IC Role / Device Role / Timing Role: Low-voltage-side switch replacing Schottky diodes in forward/flyback topologies, driven by transformer-coupled gate signals. Use Value: SchottkyPlus diode behavior (trr < 63 ns, Qr < 47 nC) suppresses voltage spikes and reduces filter component count without leakage penalty. |
| VRM Power Stage | ASIC/GPU Power Delivery |
|
Use Scenario: High-current phase-leg switch in voltage regulator modules supplying FPGAs and ASICs with dynamic load steps up to 200 A/µs. IC Role / Device Role / Timing Role: High-side or low-side switch in interleaved buck stages, leveraging low gate charge for precise PWM timing control. Use Value: Ultra-low QG (16–24 nC) and fast tr/tf (< 25 ns) enable accurate dead-time management and minimize shoot-through risk under transient loads. |
Use Scenario: Dedicated power rail switching for DDR5 memory, GPU VRAM, and PCIe accelerators requiring < 5 mΩ on-resistance and 175 °C operation. IC Role / Device Role / Timing Role: Load switch or POL stage transistor managing localized power domains with fast enable/disable sequencing. Use Value: 175 °C qualified junction rating and clip-bonded construction ensure long-term reliability in thermally constrained GPU board regions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN3R3-30YLH | Higher RDS(on) (3.3 mΩ @ 10 V), lower QG (12 nC), same LFPAK33 package and 30 V rating. | Better suited for ultra-high-frequency (>2 MHz) designs where gate loss dominates over conduction loss. | Select when prioritizing gate drive efficiency over peak current density; verify thermal margin at 70 A. |
| IRLHS6342 | SO-8 package (higher Rth(j-a)), 3.4 mΩ @ 4.5 V, no SchottkyPlus diode (trr > 100 ns, higher Qr). | Limited to lower-power, non-isolated applications due to inferior thermal performance and harder diode recovery. | Acceptable only if LFPAK33 footprint is unavailable and EMI constraints are relaxed; avoid in telecom SR. |
Compared with PSMN2R4-30MLD, PSMN3R3-30YLH trades 0.9 mΩ higher on-resistance for reduced gate charge, while IRLHS6342 sacrifices thermal performance, diode softness, and leakage control for legacy SO-8 compatibility - making PSMN2R4-30MLD optimal for high-efficiency, high-reliability 30 V synchronous rectification.
Availability
PSMN2R4-30MLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side synchronous rectification, and VRM power stages requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for PSMN2R4-30MLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and advanced packaging.
PSMN2R4-30MLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure - emphasizing low-loss switching, robust thermal design, and Schottky-like diode performance.
FAQ
What is the maximum continuous drain current for PSMN2R4-30MLD at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current remains 70 A per the datasheet's Fig. 2 - limited by package thermal design rather than silicon, with no derating applied up to 100 °C due to the LFPAK33's low Rth(j-mb) (1.44–1.65 K/W) and robust clip-bonded construction.
Does PSMN2R4-30MLD require a gate resistor for stable operation in 1 MHz synchronous rectifier circuits?
Yes - a 2–5 Ω external gate resistor is recommended to dampen ringing caused by low gate-drain capacitance (Crss = 156–234 pF) and fast switching (tr/tf < 25 ns); this prevents unintended turn-on during high di/dt events and ensures reliable soft-recovery behavior in telecom SR applications.
How does the SchottkyPlus body diode compare to a discrete Schottky in terms of reverse recovery and leakage?
The SchottkyPlus diode achieves trr = 31.2–62.4 ns and Qr = 23.5–47 nC - matching discrete Schottky performance - while maintaining IDSS < 1 µA at 25 °C and < 1.2 µA at 125 °C, unlike true Schottkys which typically exceed 100 µA leakage at 125 °C.
Can PSMN2R4-30MLD be used in automotive applications?
No - PSMN2R4-30MLD is not automotive-qualified. The datasheet explicitly states it is "non-automotive qualified" and lacks AEC-Q101 stress testing, PPAP documentation, or guaranteed operation under automotive temperature cycling or humidity requirements.
PSMN2R4-30MLD/1X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PSMN2R4-30MLD/1X FAQ
1.How can I place an order for PSMN2R4-30MLD/1X through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN2R4-30MLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN2R4-30MLD/1X reliable?
The price and inventory of PSMN2R4-30MLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R4-30MLD/1X is usually 5 days.
3.What payment methods are accepted for PSMN2R4-30MLD/1X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R4-30MLD/1X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN2R4-30MLD/1X?
PSMN2R4-30MLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN2R4-30MLD/1X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN2R4-30MLD/1X?
For technical support, including PSMN2R4-30MLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R4-30MLD/1X requirements.
6.How does Aetrix verify that PSMN2R4-30MLD/1X is sourced from the original manufacturer or authorized distributors?
All PSMN2R4-30MLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R4-30MLD/1X meets industry standards.
7.What is the process for return or replacement of PSMN2R4-30MLD/1X?
All PSMN2R4-30MLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R4-30MLD/1X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN2R4-30MLD/1X part is unused and in its original packaging.
Return procedure for PSMN2R4-30MLD/1X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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