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Nexperia USA Inc. PSMN2R4-30MLD/2X
- Part No.:
- PSMN2R4-30MLD/2X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Datasheet:
-
PSMN2R4-30MLD/2X.pdf
- Description:
- PSMN2R4-30MLD/SOT1210/MLFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,968
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Product details
Overview
PSMN2R4-30MLD from Nexperia is an N-channel 30 V, 2.4 mΩ logic-level MOSFET in LFPAK33 (SOT1210) package, optimized for 4.5 V gate drive and high-frequency synchronous rectification. It delivers ultra-low QG (16–24 nC), RDS(on) of 2.4 mΩ at VGS = 10 V and Tj = 25 °C, and soft-recovery diode performance (s-factor > 0.97) for low EMI in POL and VRM applications.
For engineers reviewing the PSMN2R4-30MLD datasheet, PSMN2R4-30MLD pinout, PSMN2R4-30MLD application, or PSMN2R4-30MLD equivalent, this page provides verified electrical parameters, thermal resistance (Rth(j-mb) = 1.44–1.65 K/W), SchottkyPlus diode behavior, and mounting-base–referenced power derating curves - all critical for high-efficiency DC-DC design validation.
Technical Context
This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology, enabling Schottky-like reverse recovery (trr = 31.2–62.4 ns, Qr = 23.5–47 nC) without elevated leakage (<1 µA at 25 °C). Its clip-bonded, solder die attach eliminates wire bonds and glue, supporting 175 °C junction operation and high-reliability power stages.
The LFPAK33 package integrates a thermally enhanced mounting base (mb) tied to drain, three parallel source terminals (Pins 1–3), and a single gate (Pin 4), minimizing parasitic inductance and enabling visual solder inspection via exposed leads. Gate threshold voltage is 1.2–2.2 V, ensuring robust logic-level compatibility down to 4.5 V drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - defines safe blocking capability in 24 V bus and 30 V-rated POL systems. |
| RDS(on) | 2.4 mΩ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 25 A, critical for high-current VRMs. |
| QG(tot) | 16–24 nC at VGS = 4.5 V - reduces gate drive power and switching losses in >500 kHz DC-DC converters. |
| trr / Qr | 31.2–62.4 ns / 23.5–47 nC - minimizes reverse recovery loss and voltage overshoot during hard commutation. |
| Rth(j-mb) | 1.44–1.65 K/W - allows direct thermal coupling to heatsink or PCB copper, enabling >70 W dissipation at Tmb = 25 °C. |
| ID | 70 A continuous at Tmb = 25 °C - package-limited current rating suitable for high-density secondary-side rectification. |
| VGS(th) | 1.2–2.2 V - ensures full enhancement with standard 3.3 V or 5 V logic drivers, eliminating need for level shifters. |
Pinout & Package
LFPAK33 (SOT1210) is a surface-mount, clip-bonded, lead-frame package with exposed mounting base (drain-connected), three parallel source terminals, and one gate terminal. Its low-inductance layout and solder die attach support high-frequency, high-reliability power switching up to 175 °C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel low-inductance source paths - reduce current loop area and improve thermal spreading from die to PCB. |
| 4 | Gate (G) | Single gate input with low RG (0.74–1.5 Ω) - enables fast, controlled turn-on/turn-off with minimal external gate resistor. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically connected to drain - serves as primary thermal path and high-current drain connection. |
Key Features
| Feature | Design Value |
|---|---|
| SchottkyPlus body diode | Soft reverse recovery (s-factor > 0.97) and <1 µA leakage at 25 °C - eliminates snubbers while maintaining low standby loss. |
| Ultra-low QGD | 5.6–8.4 nC - suppresses Miller-induced shoot-through in half-bridge topologies and improves dv/dt immunity. |
| Optimized for 4.5 V drive | RDS(on) = 2.6–3.2 mΩ at VGS = 4.5 V - enables efficient operation directly from standard buck controller gate drivers. |
| High-reliability construction | Clip-bonded die + solder attach, no wire bonds or adhesive - qualified to 175 °C and resistant to thermo-mechanical fatigue. |
| Visual solder inspection | Exposed source and gate leads - permits automated optical inspection (AOI) without X-ray, improving manufacturing yield control. |
Applications
| Server On-Board DC-DC | Telecom Secondary-Side SR |
|---|---|
|
Use Scenario: Point-of-load conversion in 1U server motherboards delivering 50–100 A to CPU/GPU cores at ≤1 V. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converters operating at 500–1000 kHz switching frequency. Use Value: 2.4 mΩ RDS(on) and 24 nC QG reduce conduction + switching loss by >15% vs. legacy SO-8 MOSFETs, improving system efficiency at full load. |
Use Scenario: Secondary-side rectification in telecom AC/DC front-end PSUs feeding 12 V intermediate bus. IC Role / Device Role / Timing Role: Low-voltage, high-current switch replacing Schottky diodes in active clamp forward or LLC resonant converters. Use Value: SchottkyPlus diode behavior cuts reverse recovery loss by ~40% versus standard MOSFETs, lowering output ripple and EMI filter cost. |
| VRM for ASIC/FPGA | Brushless Motor Control |
|
Use Scenario: Voltage regulator module supplying dynamic current to high-performance ASICs with rapid load transients. IC Role / Device Role / Timing Role: High-side or low-side switch in 3–6 phase interleaved buck regulators with 300–600 kHz per phase. Use Value: 1.44 K/W Rth(j-mb) enables direct heatsink mounting, sustaining >60 A continuous current without forced air cooling. |
Use Scenario: Inverter leg in 24–48 V BLDC motor drives for industrial automation and robotics. IC Role / Device Role / Timing Role: Low-side switch handling PWM commutation at 20–50 kHz with peak currents up to 580 A (pulsed). Use Value: Avalanche ruggedness (204 mJ) and 175 °C rating ensure robustness against inductive kickback and ambient temperature excursions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN3R3-30YLH | RDS(on) = 3.3 mΩ (VGS = 10 V); higher QG (29 nC); same LFPAK33 package | Lower current density; better suited for cost-sensitive 30–50 A POL where efficiency margin is relaxed | Select when thermal budget allows slightly higher RDS(on) and gate drive strength is limited. |
| IRLHS6342 | RDS(on) = 2.7 mΩ; SO-8 package; higher Rth(j-a) (178 K/W); no SchottkyPlus diode | Limited to lower-power, lower-frequency designs due to slower trr (~100 ns) and inferior thermal path | Choose only if LFPAK33 footprint is incompatible and board space permits larger thermal relief pads. |
Compared with PSMN3R3-30YLH and IRLHS6342, PSMN2R4-30MLD offers the lowest RDS(on), best high-frequency switching efficiency, and superior thermal performance via its mounting-base–integrated drain - making it optimal for space-constrained, high-efficiency 50–70 A VRMs and telecom rectifiers.
Availability
PSMN2R4-30MLD is available at Aetrix Electronics and suitable for server on-board DC-DC, telecom secondary-side synchronous rectification, and VRM applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PSMN2R4-30MLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors for power management, logic, and analog applications, serving automotive, industrial, and computing markets with high-volume, high-reliability components.
This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure - emphasizing low-loss switching, robust thermal performance, and Schottky-like diode behavior without leakage trade-offs.
FAQ
What is the maximum continuous drain current for PSMN2R4-30MLD at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current remains 70 A, as specified in Table 5 (Limiting Values). This reflects package-limited current handling rather than silicon-limited conduction, enabled by the LFPAK33's low Rth(j-mb) and robust clip-bonded construction.
Does PSMN2R4-30MLD require a gate resistor for stable operation in a 500 kHz buck converter?
A gate resistor is recommended to dampen ringing and control dV/dt, especially given its low gate resistance (0.74–1.5 Ω) and ultra-low QGD. Typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics - confirmed by Nexperia's application note AN11158 for NextPowerS3 devices.
How does the SchottkyPlus body diode differ from a standard MOSFET body diode in practical circuit operation?
SchottkyPlus delivers soft reverse recovery (s-factor > 0.97) and sub-1 µA leakage at 25 °C - unlike standard body diodes that exhibit hard recovery (s < 0.5) and >10 µA leakage. This reduces voltage spikes, EMI, and dead-time losses in synchronous rectifiers without requiring external Schottky diodes.
Can PSMN2R4-30MLD be used in automotive applications?
No - this part is not AEC-Q101 qualified and lacks automotive-specific stress testing or qualification documentation. Nexperia explicitly states in Section 12.4 that non-automotive qualified products are unsuitable for safety-critical or automotive use, and no automotive-grade variant is listed in the ordering information.
PSMN2R4-30MLD/2X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3264 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 91W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK33
PSMN2R4-30MLD/2X FAQ
1.How can I place an order for PSMN2R4-30MLD/2X through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN2R4-30MLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN2R4-30MLD/2X reliable?
The price and inventory of PSMN2R4-30MLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R4-30MLD/2X is usually 5 days.
3.What payment methods are accepted for PSMN2R4-30MLD/2X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R4-30MLD/2X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN2R4-30MLD/2X?
PSMN2R4-30MLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN2R4-30MLD/2X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN2R4-30MLD/2X?
For technical support, including PSMN2R4-30MLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R4-30MLD/2X requirements.
6.How does Aetrix verify that PSMN2R4-30MLD/2X is sourced from the original manufacturer or authorized distributors?
All PSMN2R4-30MLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R4-30MLD/2X meets industry standards.
7.What is the process for return or replacement of PSMN2R4-30MLD/2X?
All PSMN2R4-30MLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R4-30MLD/2X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN2R4-30MLD/2X part is unused and in its original packaging.
Return procedure for PSMN2R4-30MLD/2X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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