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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R4-30YLD/2X

Name: PSMN2R4-30YLD/2X
Brand: Nexperia USA Inc.
SKU: PSMN2R4-30YLD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R4-30YLD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R4-30YLD/2X.pdf

Description:: PSMN2R4-30YLD/SOT669/LFPAK

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Product details

Overview

PSMN2R4-30YLD from Nexperia is an N-channel 30 V, 2.4 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, optimized for 4.5 V gate drive and high-frequency synchronous rectification. It delivers ultra-low R_DS(on) at 10 V (2.4 mΩ typ), Q_G(tot) of 16.2 nC at 4.5 V, and soft-recovery diode performance (s-factor = 1) for low EMI in POL and VRM applications.

For engineers reviewing the PSMN2R4-30YLD datasheet, PSMN2R4-30YLD pinout, PSMN2R4-30YLD application, or PSMN2R4-30YLD equivalent, this device is selected for high-efficiency DC-DC conversion where low conduction loss, fast switching, minimal voltage spiking, and thermal robustness up to 175 °C junction temperature are critical design requirements.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture, enabling Schottky-like soft recovery (trr = 30.3 ns, Q_r = 20 nC) without elevated leakage (< 1 µA at 25 °C). Its gate threshold voltage is 1.7 V typ (1.2–2.2 V range), ensuring reliable turn-on with standard logic-level drivers.

The LFPAK56 package uses clip-bonded die attach and exposed mounting base connected to drain, delivering R_th(j-mb) = 1.25 K/W and eliminating wire bonds for high-current reliability. It supports continuous ID = 100 A at T_mb = 25 °C and peak IDM = 625 A (10 µs pulse).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe blocking capability in 24 V bus and 3.3/5/12 V POL systems
R_DS(on) @ V_GS = 10 V	2.4 mΩ typical - enables <10 mW conduction loss at 50 A, critical for high-current VRMs
Q_G(tot) @ V_GS = 4.5 V	16.2 nC - minimizes gate drive power and enables efficient operation above 500 kHz switching
trr / Q_r	30.3 ns / 20 nC - reduces reverse recovery losses and EMI in secondary-side synchronous rectifiers
R_th(j-mb)	1.25 K/W - allows >100 W power dissipation with moderate heatsinking on PCB mounting base
T_j max	175 °C - supports operation in thermally constrained telecom and server environments
V_GS(th)	1.7 V typical - ensures full enhancement with 3.3 V or 4.5 V microcontroller GPIO or driver IC outputs

Pinout & Package

LFPAK56 (SOT669) is a 4-lead surface-mount power package with clip-bonded die, solder die attach, and exposed copper mounting base (drain-connected) for low-inductance, high-current routing and enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
4	Gate (G)	Single gate input with low RG = 0.78 Ω - minimizes gate ringing and simplifies driver layout
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heatsink interface

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft recovery (s-factor = 1), trr = 30.3 ns, Q_r = 20 nC, and <1 µA leakage at 25 °C - eliminates need for external Schottky in synchronous rectifiers
Ultra-low gate charge	Q_G(tot) = 16.2 nC @ 4.5 V and Q_GD = 4.3 nC - enables high-efficiency, high-frequency (>1 MHz) operation with minimal driver stress
Optimized for 4.5 V drive	R_DS(on) = 2.7 mΩ typ @ V_GS = 4.5 V - ensures low on-resistance with standard logic-level controllers without level-shifting
High-reliability construction	Clip-bonded die, solder die attach, no wire bonds or adhesive - qualified to 175 °C junction and suitable for automotive-grade thermal cycling
Wave-solderable leads	Exposed lead edges enable optical solder-joint inspection - improves manufacturing yield in high-volume server and telecom assembly

Applications

Server On-Board DC-DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation for CPU V-core, GPU, and ASIC rails in 1U/2U rack servers.

IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch in multiphase buck converters operating at 300–1000 kHz.

Use Value: 2.4 mΩ R_DS(on) and 16.2 nC Q_G reduce conduction and switching losses, enabling >95% efficiency at 50–100 A output.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V or 12 V-to-1 V DC-DC modules for telecom base stations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in forward or LLC resonant converters.

Use Value: Soft-recovery diode (trr = 30.3 ns) suppresses voltage spikes and EMI, eliminating snubbers and reducing BOM count.

VRM Power Delivery

Brushless Motor Control

Use Scenario: Voltage regulator module supplying DDR memory, FPGA I/O, or PCIe slots in enterprise storage systems.

IC Role / Device Role / Timing Role: Bottom-FET switch in high-current, multi-phase buck regulators with 4.5 V gate drive from integrated PWM controller.

Use Value: 100 A continuous current rating (T_mb = 25 °C) and 175 °C T_j rating support compact, fanless VRM designs under sustained load.

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial fans, pumps, and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling PWM commutation at 20–100 kHz with fast fall time (tf = 13.9 ns).

Use Value: Low Q_GD/Q_G ratio and soft diode reduce shoot-through risk and switching losses during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R3-30YLC	R_DS(on) = 3.3 mΩ @ 10 V; Q_G(tot) = 12.5 nC @ 4.5 V; same LFPAK56 package	Higher R_DS(on) increases conduction loss but lower Q_G improves light-load efficiency	Select when optimizing for mid-load efficiency and cost-sensitive telecom POL designs
IRLHS6342TRPBF	R_DS(on) = 2.7 mΩ @ 4.5 V; SO-8 package; no integrated Schottky-like diode; trr = 55 ns	Higher reverse recovery charge (Q_r ≈ 35 nC) increases EMI and requires snubber in high-dV/dt apps	Select only for non-critical, low-frequency (<300 kHz), low-cost consumer applications where soft recovery is not required

Compared with PSMN3R3-30YLC, PSMN2R4-30YLD trades marginally higher gate charge for significantly lower conduction loss - ideal for high-current, high-efficiency VRMs. Versus IRLHS6342TRPBF, it provides superior EMI control and thermal robustness via LFPAK56 construction and SchottkyPlus diode, justifying use in mission-critical infrastructure.

Availability

PSMN2R4-30YLD is available at Aetrix Electronics and suitable for server on-board DC-DC, telecom secondary-side synchronous rectification, and VRM power delivery requiring stable component supply across extended production lifecycles.

Supply support for PSMN2R4-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and robust thermal performance are mandatory.

FAQ

What is the maximum continuous drain current for PSMN2R4-30YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is rated at 100 A per Figure 2 of the datasheet. This limit is package-constrained and remains constant up to 100 °C due to thermal derating characteristics of the LFPAK56 mounting base interface.

Does PSMN2R4-30YLD require a gate resistor for stable operation in 500 kHz buck converters?

A gate resistor of 2–5 Ω is recommended to dampen ringing caused by PCB trace inductance and internal gate resistance (RG = 0.78 Ω). The device's low Q_GD/Q_G ratio and soft diode inherently suppress oscillation, but external damping ensures robust turn-off in high-di/dt multiphase layouts.

How does the "SchottkyPlus" diode compare to a discrete Schottky in reverse recovery performance?

The integrated body diode achieves trr = 30.3 ns and Q_r = 20 nC - matching discrete Schottky performance - while maintaining leakage <1 µA at 25 °C. Unlike discrete Schottkys, it eliminates parasitic inductance from interconnect and guarantees matched thermal behavior with the MOSFET channel.

Is PSMN2R4-30YLD qualified for automotive applications per AEC-Q101?

No. This part is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications. Nexperia explicitly states in Section 12.4 of the datasheet that non-automotive qualified products are unsuitable for automotive use unless separately validated by the customer.

PSMN2R4-30YLD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 31.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2256 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R4-30YLD/2X FAQ

1.How can I place an order for PSMN2R4-30YLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R4-30YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R4-30YLD/2X reliable?

The price and inventory of PSMN2R4-30YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R4-30YLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN2R4-30YLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R4-30YLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R4-30YLD/2X?

PSMN2R4-30YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R4-30YLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R4-30YLD/2X?

For technical support, including PSMN2R4-30YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R4-30YLD/2X requirements.

6.How does Aetrix verify that PSMN2R4-30YLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN2R4-30YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R4-30YLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN2R4-30YLD/2X?

All PSMN2R4-30YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R4-30YLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R4-30YLD/2X part is unused and in its original packaging.

Return procedure for PSMN2R4-30YLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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