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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R4-30YLDX

Name: PSMN2R4-30YLDX
Brand: Nexperia USA Inc.
SKU: PSMN2R4-30YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R4-30YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R4-30YLDX.pdf

Description:: MOSFET N-CH 30V 100A LFPAK56

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN2R4-30YLD from Nexperia is an N-channel 30 V, 2.4 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, engineered for high-efficiency synchronous rectification and DC-DC conversion. It delivers R_DS(on) = 2.4 mΩ at V_GS = 10 V and T_j = 25 °C, supports 100 A continuous drain current at T_mb = 25 °C, and features ultra-low gate charge (Q_G(tot) = 16.2 nC at V_GS = 4.5 V) for high-frequency switching in server power supplies.

For engineers reviewing the PSMN2R4-30YLD datasheet, PSMN2R4-30YLD pinout, PSMN2R4-30YLD application, or PSMN2R4-30YLD equivalent, this device is selected for low-voltage, high-current POL modules, VRMs, and secondary-side rectification where low conduction loss, soft-recovery diode behavior, and thermal robustness up to 175 °C junction temperature are critical.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture, achieving s-factor > 1 and V_SD = 0.81–1.2 V at I_S = 25 A, enabling low-loss, low-noise reverse recovery without elevated leakage. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) and optimized R_DS(on) vs. V_GS curve ensure stable turn-on with 4.5 V logic-level drive.

The LFPAK56 package uses clip-bonded die attach and exposed mounting base connected to drain, delivering R_th(j-mb) = 1.25–1.42 K/W and eliminating wire bonds for enhanced reliability and current handling. Thermal performance is validated per JEDEC JESD51-14 for transient impedance and steady-state dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe blocking capability in 12 V/24 V input DC-DC stages
R_DS(on)	2.4 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 20 A output
Q_G(tot)	16.2 nC at V_GS = 4.5 V - minimizes gate drive power and switching transition time
I_D	100 A continuous at T_mb = 25 °C - supports high-current POL and VRM outputs
R_th(j-mb)	1.25 K/W typical - allows direct heatsinking via PCB copper pad for efficient thermal management
V_GS(th)	1.7 V typical - ensures full enhancement with standard 3.3 V/4.5 V logic drivers
s-factor	>1 - guarantees soft, non-oscillatory reverse recovery critical for EMI-sensitive telecom systems

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, clip-bonded Power-SO8 variant with exposed drain mounting base and no wire bonds. It features wave-solderable leads and qualified operation up to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input optimized for low-Q_G drive; compatible with standard logic-level PWM controllers
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; serves as primary heat path and high-current return

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft reverse recovery (s-factor > 1) with <1 µA leakage at 25 °C - eliminates trade-off between low V_F and high I_R
Ultra-low Q_G, Q_GD, Q_OSS	Q_G(tot) = 16.2 nC, Q_GD = 4.3 nC at V_GS = 4.5 V - reduces switching losses and EMI in >500 kHz converters
Optimized for 4.5 V gate drive	V_GS(th) = 1.7 V typ., R_DS(on) = 2.7 mΩ at V_GS = 4.5 V - enables direct interface with microcontroller GPIO or low-voltage PWM ICs
High-reliability construction	Clip-bonded die, solder die attach, no glue or wire bonds - achieves 175 °C qualification and superior power cycling endurance
Low parasitic inductance/resistance	Integrated source multiplexing (pins 1–3) and drain-mounted base - minimizes loop inductance for clean hard-switching waveforms

Applications

Server On-Board DC-DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation for CPU/GPU cores in rack-mounted servers using multiphase buck converters.

IC Role / Device Role / Timing Role: High-side or synchronous rectifier switch operating at 300–1000 kHz with 4.5 V gate drive from controller.

Use Value: 2.4 mΩ R_DS(on) and 16.2 nC Q_G reduce conduction + switching losses by >15% versus legacy SO-8 MOSFETs, improving system efficiency at 50–80 A loads.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom DC-DC bricks supplying 12 V/24 V intermediate bus.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: SchottkyPlus diode delivers V_SD ≈ 0.81 V and trr = 30.3 ns with s-factor > 1, cutting diode conduction loss and eliminating snubber components.

VRM for ASIC/FPGA

Brushless Motor Control

Use Scenario: Voltage regulator module supplying dynamic core voltage to high-performance ASICs or FPGAs with rapid load transients.

IC Role / Device Role / Timing Role: Bottom-FET in synchronous buck stage, requiring fast turn-off (tf = 13.9 ns) and low Q_GD for precise dead-time control.

Use Value: Q_GD = 4.3 nC and td(off) = 17.4 ns enable tight dead-time tuning, minimizing shoot-through risk while maintaining >92% efficiency at 30 A.

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial automation, requiring robust avalanche energy handling and thermal stability.

IC Role / Device Role / Timing Role: Low-side switching element subjected to repetitive inductive flyback and high ambient temperatures.

Use Value: E_AS = 217 mJ (unclamped) and 175 °C T_j(max) rating allow reliable operation under motor stall conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R3-30YLC	R_DS(on) = 3.3 mΩ at V_GS = 10 V; Q_G(tot) = 12.5 nC at V_GS = 4.5 V; same LFPAK56 package	Higher R_DS(on) increases conduction loss but lower Q_G improves light-load efficiency	Select when optimizing for mid-load efficiency and cost sensitivity over peak current capability
IRLHS6342	R_DS(on) = 2.8 mΩ at V_GS = 4.5 V; Q_G(tot) = 22 nC; SO-8 package with higher R_th(j-a)	SO-8 thermal resistance limits sustained current; lacks SchottkyPlus diode softness	Choose only for legacy board compatibility where LFPAK56 footprint change is not feasible

Compared with PSMN3R3-30YLC, the PSMN2R4-30YLD offers 27% lower R_DS(on) for high-current POL use, while versus IRLHS6342 it provides superior thermal performance and integrated soft-recovery diode functionality-critical for EMI-constrained telecom and server designs.

Availability

PSMN2R4-30YLD is available at Aetrix Electronics and suitable for server on-board DC-DC, telecom secondary-side synchronous rectification, and VRM applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN2R4-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to the NextPowerS3 portfolio, designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and computing infrastructure where low R_DS(on), low Q_G, and robust thermal performance are mandatory.

FAQ

What is the maximum continuous drain current for PSMN2R4-30YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is rated at 100 A per Figure 2 of the datasheet. This limit is package-constrained and remains constant from 25 °C to 100 °C mounting base temperature due to thermal design of the LFPAK56 mounting base.

Does PSMN2R4-30YLD have avalanche capability, and is it tested?

Yes, it has non-repetitive drain-source avalanche energy rating of 217 mJ at T_j(init) = 25 °C, ID = 25 A, and V_sup ≤ 30 V. This parameter is 100% production-tested per datasheet footnote [2], confirming ruggedness for inductive switching stress in motor and converter applications.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode?

The "SchottkyPlus" structure delivers forward voltage (V_SD = 0.81–1.2 V at 25 A) and soft reverse recovery (s-factor > 1, trr = 30.3 ns) comparable to Schottky diodes, but with leakage <1 µA at 25 °C-orders of magnitude lower than actual Schottky devices-enabling high-efficiency rectification without thermal runaway risk.

Can PSMN2R4-30YLD be wave soldered, and what is the peak temperature tolerance?

Yes, it is explicitly qualified for wave soldering with exposed leads enabling visual solder inspection. The peak soldering temperature rating is 260 °C per JEDEC J-STD-020, and the package is qualified to 175 °C junction temperature, supporting high-reliability industrial assembly processes.

PSMN2R4-30YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 31.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2256 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R4-30YLDX FAQ

1.How can I place an order for PSMN2R4-30YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R4-30YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R4-30YLDX reliable?

The price and inventory of PSMN2R4-30YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R4-30YLDX is usually 5 days.

3.What payment methods are accepted for PSMN2R4-30YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R4-30YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R4-30YLDX?

PSMN2R4-30YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R4-30YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R4-30YLDX?

For technical support, including PSMN2R4-30YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R4-30YLDX requirements.

6.How does Aetrix verify that PSMN2R4-30YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R4-30YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R4-30YLDX meets industry standards.

7.What is the process for return or replacement of PSMN2R4-30YLDX?

All PSMN2R4-30YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R4-30YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R4-30YLDX part is unused and in its original packaging.

Return procedure for PSMN2R4-30YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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