Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R5-30YL,115

Name: PSMN2R5-30YL,115
Brand: Nexperia USA Inc.
SKU: PSMN2R5-30YL,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN2R5-30YL,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R5-30YL,115.pdf

Description:: MOSFET N-CH 30V 100A LFPAK56

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,490

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN2R5-30YL from Nexperia is a logic-level N-channel enhancement-mode MOSFET using TrenchMOS technology in LFPAK (SOT669) package, rated for 30 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 15 A, 100 A continuous drain current at T_mb = 25 °C, and optimized for high-efficiency switching in industrial and communications power stages.

For engineers reviewing the PSMN2R5-30YL datasheet, PSMN2R5-30YL pinout, PSMN2R5-30YL application, or PSMN2R5-30YL equivalent, this device supports logic-level gate drive (V_GS(th) typ. 1.7 V), delivers low conduction loss in DC-DC converters and motor control H-bridges, and provides robust avalanche energy rating (103 mJ) for unclamped inductive switching.

Technical Context

This MOSFET employs TrenchMOS architecture to achieve low R_DS(on) and fast switching with Q_GD = 6.5 nC and Q_G(tot) = 27 nC at V_GS = 4.5 V, enabling efficient operation in synchronous rectification and Class-D amplifier output stages. Its thermal resistance R_th(j-mb) = 1.4 K/W ensures effective heat transfer to the mounting base.

The device features a source-drain diode with V_SD = 0.79 V at I_S = 25 A and T_j = 25 °C, and operates across -55 °C to +175 °C junction temperature range. Gate threshold voltage ranges from 0.65 V at 150 °C to 2.45 V at -55 °C, supporting stable turn-on under wide thermal conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V industrial bus and server VRM applications.
R_DS(on)	2.4 mΩ max at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - Enables <1 W conduction loss at 20 A, critical for high-current DC-DC phases.
I_D (continuous)	100 A at T_mb = 25 °C - High current capability supported by LFPAK's low thermal resistance and triple-source-pin layout.
Q_GD	6.5 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
E_AS	103 mJ non-repetitive avalanche energy - Supports reliable operation during inductive load turn-off without external snubbers.
V_GS(th)	1.3–2.15 V - Logic-level threshold enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.
R_th(j-mb)	1.4 K/W - Junction-to-mounting-base thermal resistance enables high-power dissipation with minimal board copper area.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain; optimized for high-current, low-inductance PCB layouts and thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 - S	Source	Three parallel source terminals reduce package inductance and improve current sharing in high-frequency switching.
4 - G	Gate	Single gate input with RG = 0.67 Ω typical; designed for low-impedance gate driver interface and fast edge control.
Mounting Base - D	Drain	Exposed copper drain pad soldered directly to PCB thermal plane; primary heat path and high-current return path.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) ≤ 2.15 V ensures full enhancement with 3.3 V or 5 V controllers, eliminating need for gate drivers in low-side configurations.
Triple-source-pin configuration	Reduces source inductance and improves switching speed consistency, especially critical in synchronous buck topologies.
Low R_DS(on) × Q_G figure of merit	2.4 mΩ × 27 nC = 64.8 mΩ·nC - Balances conduction and switching losses for high-frequency (>500 kHz) power conversion.
Robust avalanche ruggedness	103 mJ E_AS allows safe operation in unclamped inductive switching events common in motor drives and Class-D amplifiers.
Wide temperature operation	Junction range -55 °C to +175 °C supports deployment in industrial enclosures and telecom base station power supplies.

Applications

Class-D Audio Amplifiers

Server DC-DC Converters

Use Scenario: Output stage switching in high-fidelity audio amplifiers delivering >100 W into 4 Ω loads.

IC Role / Device Role / Timing Role: High-side and low-side power switch in half-bridge topology; handles PWM frequencies up to 500 kHz with minimal dead-time distortion.

Use Value: Low R_DS(on) and fast Q_GD reduce THD+N and thermal rise, while triple-source pins suppress parasitic oscillation during zero-crossing transitions.

Use Scenario: High-current synchronous rectifier in 12 V → 1 V/100 A VRM for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck converter; switched at 600 kHz with 30 ns gate drive edges.

Use Value: 2.4 mΩ R_DS(on) limits conduction loss to <0.5 W per phase; LFPAK mounting base enables direct thermal coupling to 2 oz copper planes.

Industrial Motor Control

Communications Power Supplies

Use Scenario: Half-bridge driver in 24 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-current switching element in three-phase inverter leg; subjected to repetitive inductive flyback stress.

Use Value: 103 mJ avalanche energy rating eliminates need for external clamping diodes; V_GS(th) stability over -40 °C to +125 °C ensures consistent commutation timing.

Use Scenario: Primary-side switch in isolated 48 V input telecom rectifier modules delivering 3.3 V/50 A outputs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter; operated with adaptive gate timing.

Use Value: Low C_oss (710 pF) and C_rss (314 pF) minimize capacitive losses at 300–600 kHz resonance; 1.4 K/W R_th(j-mb) sustains 88 W P_tot with forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.0 mΩ @ 10 V; TO-220 package; higher R_th(j-c) = 1.5 K/W; no triple-source pins.	Limited to lower-frequency (<200 kHz) designs due to higher Q_GD (12 nC) and slower tr/tf.	Choose when legacy TO-220 footprint required and thermal budget permits larger heatsink.
DMTH3006LPS-13	R_DS(on) = 2.7 mΩ @ 10 V; PowerSO-8 package; Q_GD = 5.8 nC; R_th(j-mb) = 1.6 K/W.	Lower peak current rating (80 A vs. 100 A); less suitable for >60 A continuous motor phase legs.	Prefer for space-constrained telecom modules where LFPAK footprint is unavailable and 80 A suffices.

Compared with IRL3803PbF and DMTH3006LPS-13, PSMN2R5-30YL delivers superior current density (100 A in LFPAK), lowest R_DS(on), and best thermal resistance-making it optimal for high-power, high-frequency industrial and server applications where board space and thermal headroom are constrained.

Availability

PSMN2R5-30YL is available at Aetrix Electronics and suitable for Class-D amplifiers, server DC-DC converters, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN2R5-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power conversion, communications infrastructure, and audio amplification.

FAQ

What is the maximum continuous drain current for PSMN2R5-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 65 A, as shown in Figure 1 of the datasheet. This value is determined by thermal limits-not electrical saturation-and assumes adequate PCB copper area for heat spreading from the mounting base.

Can PSMN2R5-30YL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes-its V_GS(th) range (1.3–2.15 V at 25 °C) and low gate charge (27 nC at 4.5 V) allow full enhancement with 3.3 V logic. However, for switching frequencies above 200 kHz or high-current loads (>30 A), a dedicated gate driver is recommended to ensure fast, low-loss transitions and prevent shoot-through.

How does the LFPAK package improve thermal performance compared to SO-8 or PowerSO-8?

The LFPAK (SOT669) uses an exposed copper mounting base directly soldered to the PCB, achieving R_th(j-mb) = 1.4 K/W-up to 40% lower than typical PowerSO-8 packages. This enables higher power dissipation without heatsinks and reduces thermal cycling stress on solder joints in high-reliability applications.

Is PSMN2R5-30YL qualified for automotive applications?

No-this part is explicitly designed and qualified for industrial and communications applications only. It is not AEC-Q101 qualified, lacks automotive-specific testing (e.g., HTOL, UHAST), and carries no automotive reliability warranty. For automotive use, select Nexperia's automotive-grade equivalents such as PSMN3R5-30YLC.

PSMN2R5-30YL,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3468 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R5-30YL,115 FAQ

1.How can I place an order for PSMN2R5-30YL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R5-30YL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R5-30YL,115 reliable?

The price and inventory of PSMN2R5-30YL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R5-30YL,115 is usually 5 days.

3.What payment methods are accepted for PSMN2R5-30YL,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R5-30YL,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R5-30YL,115?

PSMN2R5-30YL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R5-30YL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R5-30YL,115?

For technical support, including PSMN2R5-30YL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R5-30YL,115 requirements.

6.How does Aetrix verify that PSMN2R5-30YL,115 is sourced from the original manufacturer or authorized distributors?

All PSMN2R5-30YL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R5-30YL,115 meets industry standards.

7.What is the process for return or replacement of PSMN2R5-30YL,115?

All PSMN2R5-30YL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R5-30YL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R5-30YL,115 part is unused and in its original packaging.

Return procedure for PSMN2R5-30YL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…