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Nexperia USA Inc. PSMN2R5-40YLBX

Part No.:
PSMN2R5-40YLBX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixPSMN2R5-40YLBX.pdf
Description:
PSMN2R5-40YLB/SOT669/LFPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,500

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Product details

Overview

PSMN2R5-40YLBX from Nexperia is a logic-level N-channel enhancement-mode MOSFET optimized for high-current, high-efficiency power switching in 40 V systems. It delivers 2.6 mΩ RDS(on) at VGS = 10 V and 160 A continuous drain current (Tmb = 25 °C), features Schottky-Plus body diode with 0.8 V VSD and 25 ns trr, and is housed in the 175 °C-rated LFPAK56 (SOT669) package with copper-clip construction.

For engineers reviewing the PSMN2R5-40YLBX datasheet, PSMN2R5-40YLBX pinout, PSMN2R5-40YLBX application, or PSMN2R5-40YLBX equivalent, key selection criteria include its 4.5 V gate drive compatibility, 1.7 V typical VGS(th), 5 nC QGD, 1.02 K/W Rth(j-mb), and avalanche rating of 150 A IAS - all critical for DC-DC converters, motor control, and eFuse designs requiring robust SOA and low EMI.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 Superjunction technology with Schottky-Plus body diode integration, enabling soft reverse recovery (tb = 12 ns) and low Qrr (15 nC) to reduce switching losses and system EMI. Its trench-gate structure yields low gate charge (QG(tot) = 25 nC @ 4.5 V) and fast switching (tf = 17 ns).

The LFPAK56 package uses solder die attach and exposed mounting base connected to drain, delivering 0.92 K/W typical thermal resistance from junction to mounting base and supporting wave soldering with visual joint inspection. It is qualified per AEC-Q101 stress tests up to 175 °C Tj.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum - supports 36 V nominal bus systems with 10 % margin for transients
RDS(on) @ 10 V 2.6 mΩ max - enables <1 W conduction loss at 20 A, reducing heatsink requirements
ID continuous 160 A @ Tmb = 25 °C - validated under application conditions, limited by PCB thermal design
QG(tot) 25 nC typ @ 4.5 V - ensures efficient gate drive with standard logic-level controllers
VGS(th) 1.7 V typ - guarantees turn-on with 3.3 V or 5 V microcontroller outputs
trr 25 ns - minimizes commutation loss and voltage overshoot in synchronous rectification
Rth(j-mb) 0.92 K/W typ - enables direct thermal coupling to heatsink or copper plane without thermal pad

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with copper-clip construction, 175 °C junction rating, and exposed mounting base electrically connected to drain. Its low-inductance layout supports high-frequency switching and high-current routing.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce bond-wire inductance and improve current sharing
4 Gate (G) Single gate input with 0.8 Ω typical RG; compatible with 3.3 V/5 V logic drivers
Mounting Base (mb) Drain (D) Exposed copper pad tied to drain; provides primary thermal path and low-inductance power return

Key Features

Feature Design Value
NextPowerS3 Schottky-Plus body diode 0.8 V VSD and 25 ns trr - reduces freewheeling loss and eliminates external catch diode in buck converters
Avalanche ruggedness 150 A IAS, 100 % tested - enables reliable operation under inductive load switching without snubbers
Strong linear-mode SOA Rated for 100 ms pulse at 40 V/40 A - supports hot-swap and inrush limiting with controlled power dissipation
EMC-optimized switching Up to 6 dB lower radiated emissions vs. legacy MOSFETs - simplifies EMI filter design in automotive and industrial systems
Wave-solderable leads Exposed S/G terminals allow full visual solder-joint inspection - improves manufacturing yield and field reliability

Applications

Brushless DC Motor Control DC-DC Converters

Use Scenario: Three-phase inverter stage in 24–48 V robotic joint actuators with 50 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side power switch with synchronous rectification enabled by Schottky-Plus diode.

Use Value: 2.6 mΩ RDS(on) and 17 ns tf minimize conduction and switching losses, sustaining >97 % efficiency at 100 A peak phase current.

Use Scenario: Primary-side switch in 48 V-to-12 V synchronous buck converter for server power distribution.

IC Role / Device Role / Timing Role: Main switching FET operating at 300 kHz with 4.5 V gate drive from integrated controller.

Use Value: Low QGD (5 nC) and soft body-diode recovery suppress voltage spikes during dead-time, eliminating need for RC snubbers.

Battery Isolation / eFuse Inrush Management & Hotswap

Use Scenario: Bidirectional battery disconnect in 48 V energy storage systems with fault current limiting.

IC Role / Device Role / Timing Role: Load-switch FET with current-sense feedback and overcurrent shutdown response.

Use Value: 175 °C rated junction and strong SOA support sustained 80 A current limiting for >100 ms without thermal runaway.

Use Scenario: Hot-swap controller in modular telecom power shelf with 48 V backplane.

IC Role / Device Role / Timing Role: Inrush limiter using linear-mode gate control during power-up sequencing.

Use Value: Precise VGS(th) (1.7 V typ) and stable RDS(on) temperature coefficient enable accurate current ramp control and repeatable trip thresholds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon IPP026N04L RDS(on) = 2.6 mΩ @ 10 V but higher QG (38 nC); no Schottky-Plus diode (trr = 45 ns) Higher switching loss in high-frequency DC-DC; requires external diode for synchronous rectification Prefer PSMN2R5-40YLBX where low EMI and body-diode performance are critical
Vishay SiR626DP Same LFPAK56 package but RDS(on) = 2.9 mΩ @ 10 V; lower ID rating (140 A); untested for avalanche Limited SOA and no guaranteed avalanche capability reduce margin in motor fault conditions Prefer PSMN2R5-40YLBX for robotics or industrial loads demanding ruggedness and 160 A capacity

Compared with IPP026N04L and SiR626DP, PSMN2R5-40YLBX offers superior body-diode softness, lower QGD, and 100 % avalanche testing - making it the optimal choice for high-reliability 48 V power stages where EMI, efficiency, and fault tolerance are co-constrained.

Availability

PSMN2R5-40YLBX is available at Aetrix Electronics and suitable for brushless DC motor control, DC-DC converters, and battery isolation applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN2R5-40YLBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

This device belongs to Nexperia's NextPowerS3 portfolio, engineered specifically for high-efficiency, low-EMI power conversion in 12–48 V systems - emphasizing ruggedness, thermal robustness, and seamless integration with logic-level controllers.

FAQ

Is PSMN2R5-40YLBX suitable for 3.3 V gate drive?

Yes - its 1.35 V minimum VGS(th) and 2.7 mΩ RDS(on) @ 4.5 V ensure reliable enhancement-mode turn-on with 3.3 V logic. However, RDS(on) rises to 3.3 mΩ max at 4.5 V, so 5 V or higher gate drive is recommended for lowest conduction loss.

What is the maximum safe operating area (SOA) in linear mode?

At Tmb = 25 °C, the device supports 40 V × 40 A for 100 ms in single-pulse linear mode (Fig. 3). Derating is required above 25 °C mounting base temperature; SOA is defined by thermal limits, not voltage breakdown, due to its trench superjunction structure.

Does the LFPAK56 package require special PCB layout considerations?

Yes - the mounting base must be connected to a large copper pour (minimum 25.4 mm², 70 µm thick) for optimal thermal performance. The footprint follows JEDEC MO-235 standards (SOT669), with wave-solderable leads requiring 0.6 mm wide solder dams and 1.27 mm pitch.

How is avalanche ruggedness verified for this part?

Nexperia performs 100 % unclamped inductive switching (UIS) testing at IAS = 150 A per unit. Each device is validated per AEC-Q101 stress conditions, with energy rating of 452 mJ (EDS(AL)) at Tj(init) = 25 °C - ensuring robustness against inductive kickback in motor and solenoid drives.

PSMN2R5-40YLBX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.05V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
79 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5627 pF @ 20 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
147W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

PSMN2R5-40YLBX FAQ

1.How can I place an order for PSMN2R5-40YLBX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R5-40YLBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R5-40YLBX reliable?

The price and inventory of PSMN2R5-40YLBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R5-40YLBX is usually 5 days.

3.What payment methods are accepted for PSMN2R5-40YLBX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R5-40YLBX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R5-40YLBX?

PSMN2R5-40YLBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R5-40YLBX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R5-40YLBX?

For technical support, including PSMN2R5-40YLBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R5-40YLBX requirements.

6.How does Aetrix verify that PSMN2R5-40YLBX is sourced from the original manufacturer or authorized distributors?

All PSMN2R5-40YLBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R5-40YLBX meets industry standards.

7.What is the process for return or replacement of PSMN2R5-40YLBX?

All PSMN2R5-40YLBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R5-40YLBX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R5-40YLBX part is unused and in its original packaging.

Return procedure for PSMN2R5-40YLBX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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