Nexperia USA Inc. PSMN2R5-40YLD/2X

Overview

PSMN2R5-40YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 2.6 mΩ R_DS(on) at V_GS = 10 V and 25 °C, and 160 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is qualified to 175 °C junction temperature for high-reliability power switching in DC-DC converters and motor control.

For engineers reviewing the PSMN2R5-40YLD datasheet, PSMN2R5-40YLD pinout, PSMN2R5-40YLD application, or PSMN2R5-40YLD equivalent, key selection criteria include its 4.5 V gate drive compatibility, 1.75 V typical V_GS(th), avalanche-rated 150 A I_AS, low Q_GD (5.9 nC typ), and LFPAK56 thermal resistance of 0.92 K/W (j-mb).

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in a high-thermal-performance LFPAK56 package. Its Schottky-Plus body diode delivers low V_SD (0.8 V typ), soft reverse recovery (t_rr = 31 ns), and low Q_r (25 nC), enabling efficient synchronous rectification without external diode snubbing.

The device features strong linear-mode SOA, 100% tested unclamped avalanche capability (E_AS = 452 mJ), and optimized gate charge profile (Q_G(tot) = 25 nC at V_GS = 4.5 V) for fast, low-loss switching in high-frequency buck and half-bridge topologies.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with exposed copper mounting base connected to drain, optimized for low-inductance layout, wave soldering, and visual solder-joint inspection. Its copper-clip construction and solder die attach deliver robust 175 °C operation and low parasitic resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPP020N04L and SiR872DP, PSMN2R5-40YLD offers superior thermal performance (0.92 K/W vs. ≥2.5 K/W), certified avalanche ruggedness, and Schottky-Plus diode for noise-sensitive synchronous rectification-making it optimal for high-efficiency, high-reliability 40 V power stages.

Availability

PSMN2R5-40YLD is available at Aetrix Electronics and suitable for high-current DC-DC converters, brushless DC motor drives, battery protection circuits, and load-switch eFuse applications requiring stable component supply and long-term production continuity.

Supply support for PSMN2R5-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discrete, and MOSFET technologies for automotive, industrial, and computing markets.

This device belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-power-density switching applications demanding low R_DS(on), fast soft-recovery diodes, and 175 °C operation in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for PSMN2R5-40YLD at 100 °C mounting base temperature?

The datasheet specifies 121 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This rating is derived from thermal derating curves (Figure 2) and assumes adequate PCB copper area per Figure 5. It reflects real-world thermal limits-not just silicon capability-and must be validated with actual board layout and airflow conditions.

Does PSMN2R5-40YLD support gate drive voltages below 4.5 V?

Yes-its logic-level threshold (V_GS(th) = 1.35–2.05 V) and specified R_DS(on) down to 4.5 V enable functional operation at 3.3 V gate drive, though R_DS(on) increases to ~3.3 mΩ at 25 A. For minimal conduction loss, 4.5 V or higher is recommended; operation below 3 V risks incomplete enhancement and excessive heating.

How is the mounting base (drain) electrically isolated during PCB layout?

The mounting base is internally connected to the drain terminal and is not electrically isolated. In PCB layout, it must be routed to the drain net-typically a large copper pour tied to the main DC bus. Thermal vias beneath the pad are recommended, but electrical isolation is neither possible nor intended; isolation is achieved via system-level topology (e.g., high-side switch configuration).

Can PSMN2R5-40YLD replace older LFPAK devices like PSMN3R5-30YLC in existing designs?

Direct replacement requires verification: PSMN2R5-40YLD has higher V_DS (40 V vs. 30 V), lower R_DS(on) (2.6 mΩ vs. 3.5 mΩ), and improved thermal resistance (0.92 K/W vs. 1.1 K/W), but identical LFPAK56 footprint and pinout. Electrical compatibility is confirmed; thermal and layout improvements may allow higher power density without redesign.