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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R5-40YLDX

Name: PSMN2R5-40YLDX
Brand: Nexperia USA Inc.
SKU: PSMN2R5-40YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R5-40YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R5-40YLDX.pdf

Description:: MOSFET N-CH 40V 160A LFPAK56

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Product details

Overview

PSMN2R5-40YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 2.6 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 160 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is optimized for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the PSMN2R5-40YLD datasheet, PSMN2R5-40YLD pinout, PSMN2R5-40YLD application, or PSMN2R5-40YLD equivalent, key selection criteria include its 4.5 V gate drive compatibility, 175 °C junction-rated LFPAK56 thermal performance, avalanche ruggedness (150 A I_AS), and low Q_GD/Q_RR for EMI-sensitive switching designs.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in a thermally enhanced LFPAK56 package, enabling 0.92 K/W R_th(j-mb). Its Schottky-Plus body diode delivers V_SD = 0.8 V @ I_S = 25 A and t_rr = 31 ns with soft recovery-critical for minimizing voltage overshoot in hard-switched topologies.

The device is fully characterized for linear-mode SOA operation up to 175 °C, supports 100% tested unclamped avalanche energy (E_DS(AL) = 452 mJ), and features gate charge parameters optimized for 4.5 V drive: Q_G(tot) = 25 nC and Q_GD = 5.9 nC @ V_GS = 4.5 V, enabling fast, low-loss switching in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 12 V/24 V bus applications
R_DS(on)	2.6 mΩ @ V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 20 A, critical for high-current power stages
I_D(cont)	160 A @ T_mb = 25 °C - validated continuous current rating, limited by PCB thermal design in practice
Q_G(tot)	25 nC @ V_GS = 4.5 V - determines gate driver power requirement and switching speed in 4.5 V logic-driven systems
t_rr	31 ns - ultra-fast reverse recovery time of integrated Schottky-Plus diode reduces switching losses and EMI in synchronous rectifiers
R_th(j-mb)	0.92 K/W - low junction-to-mounting-base thermal resistance enables direct heatsinking via exposed drain pad
I_AS	150 A - 100% avalanche-tested single-pulse current rating ensures robustness against inductive load transients

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package featuring an exposed copper mounting base connected to drain, three parallel source leads, and one gate lead. Its copper-clip construction and solder die attach deliver superior thermal and electrical performance versus standard SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source connections reduce common-source inductance and improve switching stability
4	Gate (G)	Single gate input with 0.7 Ω typical gate resistance - compatible with standard logic-level drivers without external gate resistor
Mounting Base (mb)	Drain (D)	Exposed copper drain pad enables direct thermal path to PCB copper pour or heatsink; also serves as primary current return path

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft reverse recovery (t_r = 17 ns, t_f = 14 ns) and low Q_r = 25 nC minimize voltage spikes and EMI in synchronous rectifier operation
175 °C qualified LFPAK56 package	Copper-clip + solder die attach construction achieves 0.92 K/W R_th(j-mb), supporting high ambient temperature industrial and automotive under-hood designs
Optimized for 4.5 V gate drive	R_DS(on) = 2.7 mΩ @ V_GS = 4.5 V - enables full enhancement with standard microcontroller GPIOs without level-shifting
Avalanche ruggedness	100% tested I_AS = 150 A and E_DS(AL) = 452 mJ - eliminates need for external snubbers in inductive load switching circuits
Low parasitic inductance	Three parallel source pins and exposed drain pad reduce loop inductance - improves dV/dt immunity and reduces ringing in high-speed switching

Applications

High-Performance Synchronous Rectification

DC-to-DC Converters

Use Scenario: Used as secondary-side switch in isolated 48 V–12 V buck-derived telecom and server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Power MOSFET performing synchronous rectification to replace Schottky diodes, driven by controller's complementary PWM output.

Use Value: 2.6 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky, while soft-recovery diode eliminates 30–50 V voltage spikes during dead-time transitions.

Use Scenario: Primary-side high-side switch in 12 V–48 V non-isolated buck converters for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch controlled by integrated PWM controller with 4.5 V gate drive capability.

Use Value: Low Q_G(tot) (25 nC @ 4.5 V) enables efficient 1 MHz switching with minimal gate driver loss; 175 °C rating supports sealed enclosure operation.

Brushless DC Motor Control

Battery Protection

Use Scenario: Low-side phase switch in 24 V BLDC motor inverters for e-bike controllers and power tools.

IC Role / Device Role / Timing Role: High-current, high-dV/dt capable MOSFET handling 100+ A peak currents during commutation.

Use Value: Avalanche rating (150 A I_AS) absorbs inductive kickback during rapid PWM transitions; strong SOA supports linear-mode braking without failure.

Use Scenario: Main discharge FET in smart Li-ion battery packs for portable medical devices requiring overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Load switch configured in eFuse topology with current-sense amplifier feedback.

Use Value: 160 A continuous rating allows headroom for 50 A nominal loads; low R_DS(on) minimizes voltage drop across pack terminals during high-current discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	R_DS(on) = 2.6 mΩ @ V_GS = 10 V, but higher Q_G(tot) = 41 nC @ 4.5 V; TO-220FP package	Larger footprint and higher R_th(j-a) (45 K/W) limits high-frequency power density	Prefer when through-hole mounting or legacy TO-220 layout reuse is required; avoid in space-constrained 500 kHz+ designs
Vishay SiR872DP	R_DS(on) = 2.5 mΩ @ 10 V, but no avalanche rating; PowerPAK SO-8 package with R_th(j-mb) = 1.2 K/W	Unrated for unclamped inductive switching - requires external clamping in motor control	Select only for cost-sensitive, non-avalanche-critical DC-DC applications where thermal margin exceeds 20 °C

Compared with IPP026N04L and SiR872DP, PSMN2R5-40YLD uniquely combines 175 °C qualification, 150 A avalanche testing, and 0.92 K/W thermal resistance in a surface-mount LFPAK56 package-enabling higher reliability in compact, high-temperature, and transient-heavy applications.

Availability

PSMN2R5-40YLD is available at Aetrix Electronics and suitable for high-current synchronous rectification, brushless DC motor drives, and battery eFuse protection requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN2R5-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in power MOSFETs, ESD protection, and analog ICs.

PSMN2R5-40YLD belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-density power conversion in industrial, computing, and automotive subsystems demanding robust avalanche behavior and 4.5 V logic compatibility.

FAQ

What is the maximum continuous drain current for PSMN2R5-40YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 121 A per Figure 2 of the datasheet. This value reflects thermal limitation of the LFPAK56 package under real-world PCB thermal conditions-not silicon capability-and assumes adequate copper area and airflow.

Does PSMN2R5-40YLD require a gate resistor for typical 4.5 V logic-level driving?

No external gate resistor is required for stability with standard logic-level drivers due to its 0.7 Ω typical intrinsic gate resistance and optimized gate charge profile. However, a 2.2–4.7 Ω series resistor is recommended to dampen potential gate ringing in high-dI/dt layouts with long traces.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode in practical operation?

The Schottky-Plus diode exhibits V_SD = 0.8 V @ 25 A and t_rr = 31 ns with soft recovery (low dI/dt during turn-off), reducing voltage overshoot by up to 40% compared to conventional body diodes. This eliminates snubber networks in synchronous rectifier designs and lowers EMI filter requirements.

Can PSMN2R5-40YLD be wave soldered, and what is the recommended footprint?

Yes-the exposed mounting base and gull-wing leads are qualified for wave soldering. Per Figure 19, the recommended footprint uses 0.6 mm wide × 4.826 mm long solder lands with 1.27 mm pitch and 1.78 mm pad spacing to ensure visual solder joint inspection and void-free copper-clip attachment.

PSMN2R5-40YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5583 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R5-40YLDX FAQ

1.How can I place an order for PSMN2R5-40YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R5-40YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R5-40YLDX reliable?

The price and inventory of PSMN2R5-40YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R5-40YLDX is usually 5 days.

3.What payment methods are accepted for PSMN2R5-40YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R5-40YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R5-40YLDX?

PSMN2R5-40YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R5-40YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R5-40YLDX?

For technical support, including PSMN2R5-40YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R5-40YLDX requirements.

6.How does Aetrix verify that PSMN2R5-40YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R5-40YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R5-40YLDX meets industry standards.

7.What is the process for return or replacement of PSMN2R5-40YLDX?

All PSMN2R5-40YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R5-40YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R5-40YLDX part is unused and in its original packaging.

Return procedure for PSMN2R5-40YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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