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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R5-60PLQ

Name: PSMN2R5-60PLQ
Brand: Nexperia USA Inc.
SKU: PSMN2R5-60PLQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R5-60PLQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN2R5-60PLQ.pdf

Description:: MOSFET N-CH 60V 150A TO220AB

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Product details

Overview

PSMN2R5-60PLQ from Nexperia is a logic-level N-channel MOSFET in TO-220AB (SOT78) package, optimized for high-current battery-powered power tools. It delivers 60 V V_DS, 2.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 150 A continuous drain current (package-limited), and 521.7 mJ unclamped avalanche energy - enabling robust motor control and load switching in portable industrial equipment.

For engineers reviewing the PSMN2R5-60PLQ datasheet, PSMN2R5-60PLQ pinout, PSMN2R5-60PLQ application, or PSMN2R5-60PLQ equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) typ. 1.7 V), low conduction loss under high-pulse loads, thermal resistance to heatsink (R_th(j-mb) typ. 0.35 K/W), and avalanche ruggedness for inductive turn-off stress in cordless tool H-bridges.

Technical Context

This MOSFET employs Nexperia's TrenchMOS technology to achieve low R_DS(on) while maintaining fast switching (t_d(on) = 71 ns, t_f = 128 ns) and controlled gate charge (Q_G(tot) = 223 nC at V_GS = 10 V). Its gate threshold voltage (V_GS(th)) ranges from 0.5 V at 175 °C to 2.45 V at –55 °C, ensuring reliable turn-on across temperature extremes in handheld tool environments.

The device integrates a robust body diode with V_SD = 0.77 V at I_S = 25 A and t_rr = 53 ns, supporting synchronous rectification and freewheeling in brushed DC motor drivers. Thermal design is anchored to mounting base (not ambient), with R_th(j-mb) = 0.35–0.43 K/W enabling high-power operation when heatsink-mounted per TO-220AB mechanical specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V nominal battery systems with headroom for transient spikes.
R_DS(on)	2.6 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 20 A, critical for thermal management in compact tools.
I_D (continuous)	150 A - Package-limited current rating; defines maximum steady-state motor stall or surge capability with proper heatsinking.
E_AS	521.7 mJ - Unclamped avalanche energy at I_D = 150 A; ensures survival during inductive flyback without external snubbers in motor commutation.
Q_G(tot)	223 nC - Total gate charge at V_DS = 48 V, V_GS = 10 V; determines driver power requirement and switching speed trade-off in high-frequency PWM.
R_th(j-mb)	0.35 K/W (typ.) - Junction-to-mounting-base thermal resistance; enables ~1 kW dissipation with 35 °C rise above heatsink temperature.
V_GS(th)	1.4–2.1 V (typ. 1.7 V) @ T_j = 25 °C - Logic-level threshold compatible with 3.3 V/5 V microcontrollers without level-shifting.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base, 1 mounting hole, and 3 leads. Mounting base (mb) serves as thermal and electrical connection to heatsink; drain is internally connected to mb.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - accepts logic-level drive; requires <223 nC charge for full enhancement; RG = 1 Ω (typ.) limits ringing.
2	D	Drain - electrically and thermally tied to mounting base; must be isolated from PCB ground unless system common-heatsink architecture is used.
3	S	Source - reference node for gate drive and current sensing; connects to low-side switch return path or motor winding center tap.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max 2.1 V at 25 °C enables direct interface with 3.3 V MCUs - eliminates level-shifters and reduces BOM count in compact tool controllers.
TrenchMOS low R_DS(on)	2.6 mΩ at 10 V drive minimizes I²R losses during high-current motor startup and stall, extending battery runtime and reducing heatsink size.
High avalanche ruggedness	521.7 mJ E_AS allows safe operation during unclamped inductive turn-off in brushed motor H-bridges without snubber networks.
Robust thermal design	R_th(j-mb) = 0.35 K/W enables >1 kW pulsed power handling with standard heatsinks - critical for intermittent high-torque tool operation.
Integrated body diode	V_SD = 0.77 V and t_rr = 53 ns support efficient freewheeling in motor drive half-bridges with minimal reverse recovery loss.

Applications

Battery-Powered Power Tools

Industrial Motor Control

Use Scenario: Cordless drill/driver with brushed DC motor and electronic torque limiting.

IC Role / Device Role / Timing Role: High-side or low-side main switching element in H-bridge motor driver stage.

Use Value: 2.6 mΩ R_DS(on) reduces heat generation during sustained 150 A stall currents, enabling smaller heatsinks and longer duty cycles.

Use Scenario: Compact conveyor belt actuator with 24–48 V battery backup and variable-speed control.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled brushed DC motor driver with regenerative braking.

Use Value: 521.7 mJ avalanche rating absorbs energy from motor back-EMF during rapid deceleration without failure.

Uninterruptible Power Supplies (UPS)

High-Current Load Switching

Use Scenario: 48 V DC output stage in offline UPS with battery switchover and inverter bypass.

IC Role / Device Role / Timing Role: Output isolation switch between battery bank and inverter input, handling bidirectional current during transfer.

Use Value: 150 A continuous rating and robust body diode support seamless transition and fault current interruption without derating.

Use Scenario: Remote-controlled battery disconnect for EV auxiliary systems or telecom backup banks.

IC Role / Device Role / Timing Role: Main power path switch with overcurrent and thermal protection feedback.

Use Value: Logic-level gate simplifies control interface with MCU GPIO; low R_DS(on) ensures <50 mV drop at 100 A for accurate current sensing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	75 V V_DS, 4 mΩ R_DS(on), TO-220, higher gate charge (240 nC), non-logic-level (V_GS(th) up to 4 V).	Requires 10 V gate drive; less suitable for 3.3 V MCU control; better for higher-voltage 60 V bus designs.	Select when higher V_DS margin is needed and gate drive voltage ≥10 V is available.
STP110N6F7	60 V V_DS, 3.1 mΩ R_DS(on), TO-220, logic-level (V_GS(th) max 2.5 V), Q_G(tot) = 190 nC.	Lower gate charge improves switching efficiency but slightly higher conduction loss; similar thermal performance.	Select when lower driver power consumption is prioritized over absolute minimum R_DS(on).

Compared with PSMN2R5-60PLQ, IRF1404PBF offers higher voltage rating but demands higher gate drive and exhibits greater conduction loss, while STP110N6F7 trades 0.5 mΩ higher R_DS(on) for 33 nC lower gate charge - favoring high-frequency PWM over peak current efficiency.

Availability

PSMN2R5-60PLQ is available at Aetrix Electronics and suitable for battery-powered power tools, industrial motor control systems, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN2R5-60PLQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process innovation and automotive-grade quality systems.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in portable and industrial battery-operated equipment where thermal density and gate drive simplicity are critical.

FAQ

Is PSMN2R5-60PLQ suitable for 3.3 V microcontroller gate drive?

Yes. With a typical gate threshold voltage of 1.7 V and maximum of 2.1 V at 25 °C, PSMN2R5-60PLQ fully enhances using standard 3.3 V GPIO outputs. Its R_DS(on) remains low (≤3.15 mΩ) even at V_GS = 4.5 V, ensuring reliable conduction without external level-shifting circuitry.

What is the maximum continuous drain current rating and what limits it?

The maximum continuous drain current is 150 A, limited solely by package thermal capacity (TO-220AB mounting base), not silicon capability. This rating assumes T_mb = 25 °C and adequate heatsinking; derating applies above 25 °C mounting base temperature per Figure 1 in the datasheet.

Does PSMN2R5-60PLQ have an integrated body diode, and what are its key parameters?

Yes. It features a monolithic source-drain body diode with forward voltage V_SD = 0.77 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 53 ns, and recovered charge Q_r = 98 nC - enabling efficient freewheeling in motor drive and DC-DC applications without external diodes.

How is thermal performance defined, and what heatsink requirements apply?

Thermal performance is defined by junction-to-mounting-base resistance R_th(j-mb) = 0.35 K/W (typ.), meaning a 35 °C temperature rise occurs for every 100 W dissipated when the mounting base is held at constant temperature. Heatsink design must maintain T_mb ≤ 100 °C for full 150 A rating; no ambient-based R_th(j-a) value should be used for power design.

PSMN2R5-60PLQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 223 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 349W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN2R5-60PLQ FAQ

1.How can I place an order for PSMN2R5-60PLQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R5-60PLQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R5-60PLQ reliable?

The price and inventory of PSMN2R5-60PLQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R5-60PLQ is usually 5 days.

3.What payment methods are accepted for PSMN2R5-60PLQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R5-60PLQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R5-60PLQ?

PSMN2R5-60PLQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R5-60PLQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R5-60PLQ?

For technical support, including PSMN2R5-60PLQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R5-60PLQ requirements.

6.How does Aetrix verify that PSMN2R5-60PLQ is sourced from the original manufacturer or authorized distributors?

All PSMN2R5-60PLQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R5-60PLQ meets industry standards.

7.What is the process for return or replacement of PSMN2R5-60PLQ?

All PSMN2R5-60PLQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R5-60PLQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R5-60PLQ part is unused and in its original packaging.

Return procedure for PSMN2R5-60PLQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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