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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R6-100SSFJ

Name: PSMN2R6-100SSFJ
Brand: Nexperia USA Inc.
SKU: PSMN2R6-100SSFJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R6-100SSFJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMN2R6-100SSFJ.pdf

Description:: NEXTPOWER 80/100V MOSFETS

Quantity:: RFQ Add To RFQ list

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Inventory:2,000

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Product details

Overview

PSMN2R6-100SSF from Nexperia is a 100 V, N-channel enhancement-mode MOSFET in LFPAK88 (SOT1235) package, rated for 200 A continuous drain current at T_mb = 25 °C and featuring 2.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers high-efficiency switching in high-current DC-DC converters and motor drives, with avalanche ruggedness (578 mJ) and 175 °C junction rating for industrial-grade reliability.

For engineers reviewing the PSMN2R6-100SSF datasheet, PSMN2R6-100SSF pinout, PSMN2R6-100SSF application, or PSMN2R6-100SSF equivalent, key selection criteria include its low Q_G × R_DS(on) figure of merit (127 nC × 2.6 mΩ), robust unclamped avalanche performance, and thermal resistance to mounting base (0.25 K/W typical), critical for high-power synchronous rectification and half-bridge designs.

Technical Context

This NextPower MOSFET uses trench-gate superjunction technology optimized for low conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V at 25 °C and exhibits -8.4 mV/K temperature coefficient, enabling stable turn-on behavior across wide thermal ranges.

The device integrates a robust body diode with 54 nC recovered charge (Q_r) and 51 ns reverse recovery time (t_rr), supporting efficient synchronous rectification without external Schottky assistance. Its LFPAK88 package features a thermally enhanced mounting base directly connected to the drain, enabling direct PCB copper thermal spreading.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports primary-side switching in 48 V–96 V industrial DC-DC and battery systems with margin against transients.
R_DS(on)	2.6 mΩ typ. @ V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 200 A, reducing heatsink requirements.
I_D	200 A continuous @ T_mb = 25 °C - validated for sustained high-current operation when mounted on ≥25.4 mm × 25.4 mm 70 µm Cu FR4.
Q_G(tot)	127 nC typ. - balances fast switching (low t_d(on)/t_d(off)) with gate drive power efficiency in 100 kHz–500 kHz applications.
E_AS	578 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off events up to 71 A without failure.
R_th(j-mb)	0.25 K/W typ. - allows >300 W dissipation with ≤75 °C temperature rise from junction to mounting base under ideal cooling.
t_r/t_f	28 ns / 38 ns - supports clean, low-EMI hard-switching in full-bridge topologies with minimal shoot-through risk.

Pinout & Package

LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package measuring 8.0 mm × 8.0 mm × 1.6 mm with 2.0 mm lead pitch. The mounting base (pin 4) is internally connected to the drain and serves as the primary thermal and electrical path for high-current conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - accepts standard 10 V logic-level drive; plateau voltage 4.5 V ensures robust Miller immunity.
2	S	Source terminal - low-inductance connection point for return current path; electrically tied to pins 3 and internal source metallization.
3	S	Source terminal - paralleled with pin 2 to reduce source inductance and improve switching stability in high-dI/dt circuits.
4	D / mb	Drain and mounting base - provides dual function: high-current drain conduction path and low-thermal-resistance heat transfer to PCB copper.

Key Features

Feature	Design Value
Low Q_rr	54 nC - reduces diode switching loss and voltage spiking during commutation in synchronous rectifiers.
Avalanche rating	100% tested to 578 mJ - eliminates need for external snubbers in inductive load switching applications.
Q_G × R_DS(on) FOM	330 pC·Ω typ. - optimizes trade-off between switching speed and conduction loss for high-frequency SMPS.
Thermal robustness	Rated to T_j = 175 °C - supports operation in sealed enclosures or high-ambient environments without derating.
RoHS & HF-free	Compliant per EU Directive 2011/65/EU - meets environmental requirements for industrial and consumer end equipment.

Applications

AC-DC Synchronous Rectifier

BLDC Motor Inverter Stage

Use Scenario: Secondary-side rectification in 1 kW server PSU with 12 V output.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch replacing Schottky diode; driven by controller with adaptive dead-time control.

Use Value: Reduces conduction loss by >60% vs. 120 A Schottky, enabling >96% efficiency at full load and eliminating forced-air cooling.

Use Scenario: Phase-leg high-side switch in 3-phase 48 V e-bike motor controller.

IC Role / Device Role / Timing Role: N-channel power switch in half-bridge configuration; operated with bootstrap gate drive at 20 kHz PWM.

Use Value: Delivers 200 A peak phase current with <0.5 °C/W effective thermal resistance, enabling compact 100 mm × 100 mm PCB layout.

Battery Protection Circuit

Industrial DC-DC Primary Switch

Use Scenario: 72 V Li-ion battery pack protection module with overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: Main discharge FET in active protection IC-controlled path; handles bidirectional current during charge/discharge.

Use Value: Withstands 955 A pulsed current and 578 mJ avalanche energy, enabling single-FET fault clearing without fuse replacement.

Use Scenario: Primary-side switch in isolated 400 V input → 48 V output telecom DC-DC converter.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in forward or active-clamp flyback topology operating at 250 kHz.

Use Value: Low 2.6 mΩ R_DS(on) and 127 nC Q_G minimize combined conduction + switching loss, improving power density to >80 W/in³.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N10N5	Higher R_DS(on) (2.9 mΩ), lower I_D (190 A), TO-220FP package with higher R_th(j-c) (1.0 K/W).	Limited to lower-power industrial SMPS where through-hole mounting and lower thermal performance are acceptable.	Choose only if legacy TO-220 footprint compatibility is required and thermal budget allows ≥2× larger heatsink.
Vishay SiR626DP	Same LFPAK88 package, but higher R_DS(on) (3.2 mΩ), lower E_AS (420 mJ), and no 100% avalanche test.	Suitable for cost-sensitive BLDC inverters where avalanche stress is mitigated by system-level clamping.	Select when BOM cost is prioritized over field reliability in unclamped inductive switching environments.

Compared with IPP026N10N5 and SiR626DP, PSMN2R6-100SSF offers superior thermal performance (0.25 K/W vs. ≥0.8 K/W), verified avalanche ruggedness, and lowest R_DS(on), making it optimal for space-constrained, high-reliability 200 A switching nodes.

Availability

PSMN2R6-100SSF is available at Aetrix Electronics and suitable for high-current DC-DC converters, BLDC motor controllers, and battery protection systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN2R6-100SSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

PSMN2R6-100SSF belongs to the NextPower series, engineered specifically for high-efficiency, high-current power conversion in industrial and consumer applications demanding low R_DS(on), robust avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for PSMN2R6-100SSF?

The device is rated for 200 A continuous drain current at mounting base temperature (T_mb) = 25 °C, as validated in application testing. Practical current handling depends on PCB copper area, thermal interface, and ambient conditions-derating to 169 A is specified at T_mb = 100 °C per Figure 2.

Is PSMN2R6-100SSF suitable for avalanche-prone circuits like inductive load switching?

Yes-it is 100% tested for non-repetitive avalanche energy (E_AS) up to 578 mJ at T_j(init) = 25 °C, with I_AS = 71 A. This enables reliable operation in unclamped inductive turn-off scenarios without external protection components.

How does the LFPAK88 package improve thermal performance compared to D²PAK?

LFPAK88's mounting base (pin 4) connects directly to the drain and provides a low-impedance thermal path to PCB copper, achieving R_th(j-mb) = 0.25 K/W typical-nearly 3× better than standard D²PAK (0.7 K/W). Its 8 mm × 8 mm footprint also allows larger copper pour area than D²PAK's 10 mm × 15 mm outline.

Does PSMN2R6-100SSF require negative gate drive for safe operation?

No-its gate-source voltage rating is ±20 V, and it operates reliably with 0 V to +10 V drive. The gate threshold voltage (2–4 V) and plateau voltage (4.5 V) ensure strong turn-on with standard logic-level drivers; negative bias is unnecessary unless system-level noise immunity demands it.

PSMN2R6-100SSFJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 191 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12838 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 341W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMN2R6-100SSFJ FAQ

1.How can I place an order for PSMN2R6-100SSFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R6-100SSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R6-100SSFJ reliable?

The price and inventory of PSMN2R6-100SSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R6-100SSFJ is usually 5 days.

3.What payment methods are accepted for PSMN2R6-100SSFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R6-100SSFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R6-100SSFJ?

PSMN2R6-100SSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R6-100SSFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R6-100SSFJ?

For technical support, including PSMN2R6-100SSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R6-100SSFJ requirements.

6.How does Aetrix verify that PSMN2R6-100SSFJ is sourced from the original manufacturer or authorized distributors?

All PSMN2R6-100SSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R6-100SSFJ meets industry standards.

7.What is the process for return or replacement of PSMN2R6-100SSFJ?

All PSMN2R6-100SSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R6-100SSFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R6-100SSFJ part is unused and in its original packaging.

Return procedure for PSMN2R6-100SSFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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