Nexperia USA Inc. PSMN2R6-30YLC,115

Overview

PSMN2R6-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, designed for high-efficiency power switching in industrial and communications systems. It delivers 30 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and operates up to 175 °C junction temperature - enabling use in server power supplies and synchronous rectifiers.

For engineers reviewing the PSMN2R6-30YLC datasheet, PSMN2R6-30YLC pinout, PSMN2R6-30YLC application, or PSMN2R6-30YLC equivalent, key selection criteria include its 4.5 V gate drive optimization, ultra-low Q_G (18 nC typ. at 4.5 V), 1.25 K/W R_th(j-mb), and NextPower Superjunction architecture for reduced conduction and switching losses in DC-DC converters and battery protection circuits.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction technology to achieve low R_DS(on) and minimized gate charge parameters - Q_G(tot) = 18 nC (V_GS = 4.5 V), Q_GD = 5.5 nC - enabling fast switching with reduced Miller effect and improved efficiency across load ranges. Its threshold voltage (V_GS(th)) ranges from 1.05 V to 1.95 V at 25 °C, supporting robust logic-level gate drive compatibility.

The device uses a 4-pin LFPAK (SOT669) package with integrated mounting base connected to drain, delivering low parasitic inductance and resistance while achieving 106 W total power dissipation at T_mb = 25 °C. Thermal resistance from junction to mounting base is 1.25 K/W typical, facilitating direct heatsink attachment for high-power density designs.

Key Specifications

Pinout & Package

PSMN2R6-30YLC uses the LFPAK (SOT669) plastic single-ended surface-mounted package - also known as Power-SO8 - featuring an exposed copper mounting base electrically connected to the drain terminal for low-inductance, high-current routing and enhanced thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with PSMN3R3-30YLC and IPB033N04LG, PSMN2R6-30YLC offers the lowest R_DS(on) in the 30 V class with LFPAK's superior thermal performance, making it optimal for high-current, space-constrained industrial power stages where conduction loss dominates system efficiency.

Availability

PSMN2R6-30YLC is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, DC-DC converters, and power OR-ing applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN2R6-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in industrial, computing, and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN2R6-30YLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current remains rated at 100 A per datasheet Figure 1 - this reflects package-limited current capacity rather than silicon thermal limits. Derating begins above 100 °C due to thermal resistance constraints, with 575 A peak pulsed current supported for ≤10 µs pulses at 25 °C mounting base.

Does PSMN2R6-30YLC require a gate resistor for stable operation in hard-switched topologies?

Yes - a gate resistor of 4.7 Ω is specified in the datasheet for switching characterization (Figure 14/15). This value balances turn-on/turn-off speed against ringing and overshoot; lower values (<2.2 Ω) may cause gate oscillation in high-di/dt layouts, while higher values (>10 Ω) increase switching losses unnecessarily.

Can PSMN2R6-30YLC be used in avalanche mode for energy clamping?

Yes - it is rated for non-repetitive drain-source avalanche energy of 50 mJ (E_DS(AL)S) under specified conditions (V_GS = 10 V, T_j(init) = 25 °C, I_D = 100 A, V_sup ≤30 V, R_GS = 50 Ω). This supports unclamped inductive switching in protection circuits but is not intended for repetitive avalanche operation.

How does the LFPAK package compare thermally to traditional SO-8 or DPAK packages?

The LFPAK (SOT669) achieves 1.25 K/W R_th(j-mb), outperforming standard SO-8 (~3.5 K/W) and matching many DPAK variants - due to its exposed copper mounting base directly bonded to the drain. Unlike DPAK, LFPAK maintains a low-profile (1.3 mm height) and 4-pin surface-mount footprint, enabling higher power density without through-hole assembly.