Nexperia USA Inc. PSMN2R6-40YS,115

Overview

PSMN2R6-40YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at T_j = 25 °C and 100 A continuous drain current at T_mb = 25 °C. It features advanced TrenchMOS technology, 175 °C junction rating, and is qualified for industrial power conversion and battery protection circuits.

For engineers reviewing the PSMN2R6-40YS datasheet, PSMN2R6-40YS pinout, PSMN2R6-40YS application, or PSMN2R6-40YS equivalent, key selection criteria include its low R_DS(on) at 100 °C junction, unclamped avalanche energy of 179 mJ, thermal resistance R_th(j-mb) as low as 0.5 K/W, and gate charge Q_G(tot) of 63 nC under switching conditions.

Technical Context

This MOSFET uses Nexperia's TrenchMOS process to achieve low on-resistance and low gate charge simultaneously. Its LFPAK package enables high power density with superior thermal coupling to the PCB mounting base, supporting high-current DC-DC stages and motor drive half-bridges without external heatsinks.

The device operates with a gate threshold voltage (V_GS(th)) ranging from 1 V at 175 °C to 4.6 V at –55 °C, ensuring robust turn-on margin across temperature. Its source-drain diode exhibits 0.78 V forward voltage at 25 A and 45 ns reverse recovery time - critical for synchronous rectification and freewheeling in buck converters.

Key Specifications

Pinout & Package

PSMN2R6-40YS uses the LFPAK (SOT669) package - a 4-lead plastic single-ended surface-mount outline with integrated copper clip for low-inductance, high-current source connection and direct thermal path to PCB mounting base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and DMTH4007LPSQ, PSMN2R6-40YS uniquely combines 175 °C qualification, 2.8 mΩ R_DS(on), and 179 mJ avalanche energy - making it optimal for thermally constrained, mission-critical industrial and server power designs where sustained high-temperature operation and fault tolerance are mandatory.

Availability

PSMN2R6-40YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and server power supplies requiring stable component supply, long lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN2R6-40YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's LFPAK power MOSFET product line - engineered specifically for high-current, high-efficiency power conversion in industrial, computing, and battery-powered systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PSMN2R6-40YS at 100 °C mounting base temperature?

The datasheet specifies 100 A continuous drain current at T_mb = 25 °C. At T_mb = 100 °C, Figure 1 shows ID drops to approximately 65 A due to thermal derating. This reflects real-world thermal constraints in compact PCB layouts without forced airflow.

Does PSMN2R6-40YS have an integrated Schottky diode or body diode? What are its recovery characteristics?

It uses a standard silicon body diode - not a Schottky - with 0.78 V forward voltage at 25 A and 25 °C. Its reverse recovery time is 45 ns and recovered charge is 47 nC under specified test conditions (IS = 50 A, dIS/dt = –100 A/µs), enabling efficient freewheeling in synchronous buck topologies.

Can PSMN2R6-40YS be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - its V_GS(th) minimum is 1 V but typical turn-on requires ≥4.5 V for low R_DS(on). At 3.3 V, R_DS(on) rises sharply (Figure 8), exceeding 10 mΩ. A dedicated gate driver or level-shifter is required to achieve full 2.8 mΩ performance and avoid excessive conduction loss.

How does the LFPAK package improve thermal performance compared to traditional SO-8?

LFPAK replaces the leadframe with a copper clip connecting die directly to the exposed drain pad, reducing R_th(j-mb) to 0.5 K/W - nearly half that of SO-8 (typically 0.9–1.1 K/W). This allows 30–40 % higher power dissipation at the same board temperature, verified in Nexperia's thermal characterization (Figure 4).