Nexperia USA Inc. PSMN2R6-40YS/2X

Overview

PSMN2R6-40YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at T_j = 25 °C and 100 A continuous drain current at T_mb = 25 °C. It features advanced TrenchMOS technology, qualified to 175 °C junction temperature, and is optimized for high-efficiency switching in server power supplies and lithium-ion battery protection circuits.

For engineers reviewing the PSMN2R6-40YS datasheet, PSMN2R6-40YS pinout, PSMN2R6-40YS application, or PSMN2R6-40YS equivalent, key selection criteria include its 0.5 K/W typical thermal resistance (junction-to-mounting base), 63 nC total gate charge, and LFPAK's mechanical robustness for high-current load switching in industrial and communications equipment.

Technical Context

This MOSFET employs Nexperia's TrenchMOS architecture to achieve low conduction loss and fast switching with 24 ns turn-on delay and 15 ns fall time. Its gate threshold voltage ranges from 1 V at 175 °C to 4.6 V at –55 °C, enabling stable operation across extreme ambient conditions.

The device integrates a source-drain diode with 0.78 V forward voltage at 25 A and 45 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in DC-DC converters and motor control H-bridges.

Key Specifications

Pinout & Package

PSMN2R6-40YS uses the SOT669 (LFPAK) 4-lead plastic surface-mount package, featuring an exposed copper drain pad for enhanced thermal and electrical performance. The package measures 5.0 × 3.3 mm with 1.3 mm height and is optimized for automated assembly and high-power density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRL3803PBF and DMTH4007LPSQ, PSMN2R6-40YS offers optimal balance of ultra-low R_DS(on), industry-standard LFPAK manufacturability, and documented 175 °C/179 mJ ruggedness - making it preferred for high-volume industrial and computing power stages where cost, reliability, and assembly compatibility are jointly critical.

Availability

PSMN2R6-40YS is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, and industrial DC-DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN2R6-40YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for industrial and consumer markets.

This device belongs to Nexperia's standard-level TrenchMOS portfolio, engineered specifically for high-efficiency, high-current switching in space-constrained power conversion systems where thermal performance and manufacturing scalability are essential.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The PSMN2R6-40YS supports 60 A continuous drain current at T_mb = 100 °C, as derived from Figure 1 in the datasheet where ID drops linearly from 100 A at 25 °C to ~60 A at 100 °C. This derating reflects thermal limits under natural convection conditions on a standard 2 oz copper PCB with 10 cm² thermal pad.

Does this MOSFET require a gate driver for 3.3 V microcontroller interfaces?

No - the gate threshold voltage is 2–4 V at 25 °C, and the device delivers usable R_DS(on) (≤10 mΩ) with V_GS ≥ 4.5 V. A 3.3 V GPIO can partially enhance conduction but will not fully saturate the channel; for full performance, a 5 V or 10 V gate driver is required per datasheet Figures 9 and 12.

How does the source-drain diode compare to discrete Schottky alternatives?

The integrated body diode has 0.78 V forward voltage at 25 A and 45 ns reverse recovery time - significantly slower and higher-V_F than Schottky diodes, but eliminates component count and layout complexity in non-critical freewheeling paths. For high-frequency (>500 kHz) or low-loss applications, external Schottky co-packaging is recommended.

Is the LFPAK package compatible with standard SO-8 reflow profiles?

Yes - the SOT669 (LFPAK) package is JEDEC-compliant and designed for standard lead-free reflow profiles (peak 260 °C, 30 s max). Its thermal pad requires full-solder coverage (≥90 % voiding tolerance) and stencil aperture design matching the 4.1 × 3.3 mm drain pad per Figure 18 in the datasheet.