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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R8-40PS,127

Name: PSMN2R8-40PS,127
Brand: Nexperia USA Inc.
SKU: PSMN2R8-40PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R8-40PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN2R8-40PS,127.pdf

Description:: MOSFET N-CH 40V 100A TO220AB

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Product details

Overview

PSMN2R8-40PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers high-efficiency power switching in industrial DC-DC converters, server power supplies, motor control, and load switching circuits.

For engineers reviewing the PSMN2R8-40PS datasheet, PSMN2R8-40PS pinout, PSMN2R8-40PS application, or PSMN2R8-40PS equivalent, key selection criteria include its low on-resistance at standard gate drive (10 V), avalanche ruggedness (407 mJ), thermal resistance (0.4–0.7 K/W j-to-mb), and TO-220AB mounting base connection to drain.

Technical Context

This MOSFET uses planar silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining robust safe operating area (SOA) up to 797 A pulsed drain current. Its gate threshold voltage (2.3–4 V) ensures reliable turn-on with standard logic-level drivers.

The device integrates an intrinsic body diode with 47 ns reverse recovery time and 61 nC recovered charge, enabling synchronous rectification and freewheeling in hard-switched topologies. Thermal design is anchored by direct-mounting capability via the drain-connected mounting base and validated transient thermal impedance curves.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum continuous drain-source blocking voltage; defines upper limit for switch node voltage in buck, boost, and half-bridge applications.
R_DS(on)	2.8 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 100 A DC, critical for high-current power stages.
I_D	100 A @ T_mb = 25 °C - Continuous drain current limited by package thermal capacity; derates to zero at T_mb ≈ 200 °C.
E_AS	407 mJ - Non-repetitive avalanche energy rating; supports unclamped inductive switching events without failure.
R_th(j-mb)	0.4–0.7 K/W - Junction-to-mounting-base thermal resistance; determines heatsink sizing when mounted directly to metal chassis or heatsink.
Q_G(tot)	71 nC - Total gate charge at V_GS = 10 V, V_DS = 20 V; sets gate driver current requirement for 100 ns switching transitions.
C_iss	4491 pF - Input capacitance at V_DS = 0 V; influences gate drive loop stability and Miller effect during switching.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted 3-lead configuration. Mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate terminal - Controls channel conduction; requires ≥10 V for full enhancement; internal gate resistance is 0.7 Ω (AC).
2	D	Drain terminal - High-side or low-side switch node; electrically tied to mounting base for thermal and electrical integration.
3	S	Source terminal - Return path for load current; referenced to gate drive ground in low-side configurations.
mb	Mounting base	Drain-connected thermal interface - Must be insulated from chassis unless drain is at system ground; enables direct heatsinking.

Key Features

Feature	Design Value
Low R_DS(on)	2.8 mΩ at 10 V drive - Reduces I²R losses in high-current paths, improving efficiency in 12 V/48 V server and telecom power supplies.
Standard-level gate drive	V_GS(th) = 2.3–4 V - Compatible with 5 V and 10 V microcontroller outputs and dedicated gate drivers without level-shifting.
Avalanche ruggedness	407 mJ E_AS - Withstands unclamped inductive energy in motor drives and relay snubbing without external protection.
High-temperature operation	T_j = −55 to +175 °C - Supports operation in sealed industrial enclosures and under-hood automotive auxiliary systems (non-automotive qualified).
Fast switching	t_r = 29 ns, t_f = 23 ns - Enables >500 kHz PWM in DC-DC converters while limiting switching losses.

Applications

Server Power Supplies

DC-DC Converters

Use Scenario: Primary-side synchronous rectification and secondary-side OR-ing in 48 V input server PSUs delivering up to 2 kW.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used as synchronous rectifier and hot-swap FET, driven by dedicated controller ICs.

Use Value: 2.8 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 3.5 mΩ devices, improving full-load efficiency by 0.4–0.6%.

Use Scenario: High-current step-down (buck) converter in telecom base station power modules operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side switch in discrete buck stage, paired with external gate driver and bootstrap circuitry.

Use Value: 71 nC Q_G(tot) and 4491 pF C_iss enable clean 100 ns turn-on with 1 A peak gate drive, minimizing shoot-through risk.

Motor Control

Load Switching

Use Scenario: H-bridge leg in 24 V brushed DC motor driver for industrial automation actuators requiring bidirectional torque.

IC Role / Device Role / Timing Role: N-channel half-bridge switch with integrated body diode used for PWM-controlled direction and speed regulation.

Use Value: 47 ns t_rr and 61 nC Q_r minimize diode conduction loss and voltage spikes during commutation, reducing EMI filter size.

Use Scenario: High-current electronic fuse and hot-swap controller in programmable logic controller (PLC) backplane power distribution.

IC Role / Device Role / Timing Role: Single-pole load switch controlling 100 A DC bus to field I/O modules, with overcurrent and thermal shutdown support.

Use Value: 175 °C T_j rating and 211 W P_tot allow sustained 80 A operation with forced-air cooling, eliminating need for parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_G = 131 nC; TO-220 package; 40 V rating	Higher conduction loss and slower switching; less suitable for high-frequency, high-current designs	Select when cost sensitivity outweighs efficiency targets and gate drive capability is ≥2 A peak.
STP40NF10L	R_DS(on) = 3.2 mΩ @ 10 V; Q_G = 85 nC; TO-220 package; 100 V rating	Higher voltage rating but higher R_DS(on) and gate charge; lower thermal robustness (T_j = 175 °C, R_th(j-mb) = 0.85 K/W)	Prefer when system requires 100 V blocking margin and thermal budget allows higher junction rise.

Compared with IRF1404PBF and STP40NF10L, PSMN2R8-40PS offers the lowest R_DS(on) and best thermal resistance in TO-220 form factor, making it optimal for space-constrained, high-efficiency 40 V industrial power stages where gate drive is stable at 10 V.

Availability

PSMN2R8-40PS is available at Aetrix Electronics and suitable for server power supplies, DC-DC converters, motor control, and load switching applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PSMN2R8-40PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, logic, and ESD protection.

This device belongs to Nexperia's standard-level TrenchMOS family, engineered for high-current, high-efficiency power switching in industrial and communications equipment where thermal robustness and gate-drive simplicity are critical.

FAQ

Is PSMN2R8-40PS suitable for automotive applications?

No. PSMN2R8-40PS is not automotive-qualified per AEC-Q101. It lacks automotive-grade screening, extended temperature validation beyond 175 °C, and zero-defect manufacturing controls required for safety-critical vehicle systems. Use only in industrial, telecom, or computing applications.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is derated to approximately 60 A at T_mb = 100 °C. This reflects thermal limitation of the TO-220AB package, not silicon capability - the device remains functional but must be thermally managed to avoid exceeding 175 °C junction temperature.

Can PSMN2R8-40PS be used with 5 V gate drive?

Not reliably for full conduction. At V_GS = 5 V, R_DS(on) rises sharply (≥10 mΩ per Fig. 9), increasing conduction loss by >3×. The device is specified as "standard level", meaning it is optimized for 10 V drive; use logic-level alternatives like PSMN022-100BSE for true 5 V operation.

How is the mounting base electrically connected?

The mounting base (mb) is internally connected to the drain terminal, as confirmed in Table 2 (Pinning information) and Figure 18 (package outline). When mounted to a heatsink, the heatsink becomes part of the drain circuit - insulation is mandatory unless the drain node is at system ground potential.

PSMN2R8-40PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4491 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 211W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN2R8-40PS,127 FAQ

1.How can I place an order for PSMN2R8-40PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R8-40PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R8-40PS,127 reliable?

The price and inventory of PSMN2R8-40PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R8-40PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN2R8-40PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R8-40PS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R8-40PS,127?

PSMN2R8-40PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R8-40PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R8-40PS,127?

For technical support, including PSMN2R8-40PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R8-40PS,127 requirements.

6.How does Aetrix verify that PSMN2R8-40PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN2R8-40PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R8-40PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN2R8-40PS,127?

All PSMN2R8-40PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R8-40PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R8-40PS,127 part is unused and in its original packaging.

Return procedure for PSMN2R8-40PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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