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Nexperia USA Inc. PSMN2R8-40YSBX
- Part No.:
- PSMN2R8-40YSBX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN2R8-40YSBX.pdf
- Description:
- PSMN2R8-40YSB/SOT669/LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,500
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Product details
Overview
PSMN2R8-40YSBX from Nexperia is an N-channel standard-level MOSFET in LFPAK56 (SOT669) package, rated for 40 V VDS, 2.8 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and 160 A continuous drain current at Tmb = 25 °C. It employs NextPowerS3 Schottky-Plus technology to deliver soft body-diode recovery, low Qrr (17 nC), and 6 dB improved EMC performance - deployed in high-current DC-DC converters and brushed/BLDC motor control stages.
For engineers reviewing the PSMN2R8-40YSBX datasheet, PSMN2R8-40YSBX pinout, PSMN2R8-40YSBX application, or PSMN2R8-40YSBX equivalent, this page delivers verified electrical parameters, thermal resistance (Rth(j-mb) = 0.92 K/W), avalanche ruggedness (IAS = 150 A, 100% tested), and LFPAK56 mounting-base thermal interface details critical for high-power board-level reliability.
Technical Context
This MOSFET uses TrenchMOS Superjunction architecture with Schottky-Plus body diode integration, enabling low VSD (0.8 V at IS = 25 A, Tj = 25 °C) and soft reverse recovery (trr = 27 ns, Qr = 17 nC). Its gate threshold voltage (VGS(th) = 3.1 V typ.) and plateau voltage (VGS(pl) = 4.5 V) support robust standard-level drive compatibility without requiring level-shifting circuitry.
The device is qualified to 175 °C junction temperature and features copper-clip die attach with exposed mounting base connected to drain - delivering low parasitic inductance and resistance while enabling wave soldering and visual solder-joint inspection. Its SOA supports linear-mode operation up to 210 mJ unclamped avalanche energy at Tj(init) = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum drain-source voltage - defines safe blocking capability in 36 V nominal systems like 48 V battery-powered industrial drives. |
| RDS(on) | 2.4–2.8 mΩ at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 100 A, critical for high-efficiency power stages. |
| ID (cont) | 160 A at Tmb = 25 °C - validated continuous current rating under optimized PCB thermal layout, not theoretical limit. |
| QG(tot) | 37 nC typical total gate charge - determines gate driver power requirement and switching speed in hard-switched topologies. |
| Qrr | 17 nC recovered charge - directly reduces EMI and switching losses during body-diode commutation in synchronous rectifiers. |
| Rth(j-mb) | 0.92 K/W typical junction-to-mounting-base thermal resistance - enables direct thermal coupling to heatsink or copper plane without thermal pad. |
| VSD | 0.8 V forward voltage at IS = 25 A, Tj = 25 °C - lowers freewheeling loss vs. conventional MOSFET body diodes. |
Pinout & Package
LFPAK56 (SOT669) is a 4-terminal surface-mount plastic package with copper-clip construction, qualified to 175 °C. Mounting base is electrically connected to drain and serves as primary thermal path. Exposed leads support wave soldering and visual solder-joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching. |
| 4 | Gate (G) | Single gate terminal with low RG (0.7 Ω typ.) - minimizes gate oscillation risk and supports fast turn-on/turn-off with moderate gate resistance. |
| Mounting Base | Drain (D) | Exposed copper base tied internally to drain - provides low-inductance, low-resistance thermal and power path to PCB heatsink area. |
Key Features
| Feature | Design Value |
|---|---|
| NextPowerS3 Schottky-Plus body diode | Soft recovery (ta = 14 ns, tb = 13 ns), low VSD (0.8 V), and low Qr (17 nC) reduce EMI and boost efficiency in freewheeling paths. |
| Avalanche ruggedness | 100% tested at IAS = 150 A - ensures robustness against inductive load transients without external snubbers in motor drives. |
| Strong SOA rating | 210 mJ unclamped avalanche energy at Tj(init) = 25 °C - supports reliable linear-mode operation in eFuse and hot-swap applications. |
| EMC-optimized design | Up to 6 dB improvement in radiated emissions - achieved via reduced parasitic capacitance (Ciss = 3259 pF typ.) and controlled dV/dt slew rate. |
| 175 °C qualified LFPAK56 package | Copper-clip die attach and solder die bonding - eliminates wire bonds, improves thermal cycling reliability, and enables high-power density layouts. |
Applications
| Brushless DC Motor Control | Battery Isolation |
|---|---|
|
Use Scenario: High-current half-bridge leg in 48 V robotic joint actuators with PWM switching at 20–100 kHz. IC Role / Device Role / Timing Role: Power switch in low-side configuration; handles bidirectional current during regenerative braking and commutation. Use Value: Low RDS(on) (2.8 mΩ) limits conduction loss to <0.3 W at 100 A, while soft body diode prevents voltage spikes during flyback recovery. |
Use Scenario: Bidirectional isolation between dual 48 V battery banks in autonomous mobile robots with fault detection. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for active battery disconnect; operated in linear mode during inrush limiting. Use Value: Strong SOA (210 mJ avalanche energy) and 175 °C rating allow sustained linear operation during hot-swap events without thermal runaway. |
| Industrial eFuse | DC-DC Converter Primary Switch |
|
Use Scenario: Programmable overcurrent protection in programmable logic controller (PLC) backplane power distribution. IC Role / Device Role / Timing Role: High-side load switch with current sensing and fast shutdown response (<1 µs). Use Value: Low QG (37 nC) and fast switching (tf = 9 ns) enable precise current limiting and sub-10 µs fault clearing in safety-critical systems. |
Use Scenario: Synchronous rectifier in 400 W isolated LLC resonant converter operating at 300–500 kHz. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; conducts high-frequency AC current with minimal reverse recovery loss. Use Value: Schottky-Plus diode achieves Qr = 17 nC and trr = 27 ns - cuts reverse recovery loss by >60% versus standard trench MOSFETs. |
Availability
PSMN2R8-40YSBX is available at Aetrix Electronics and suitable for industrial motor control, battery management systems, and high-efficiency DC-DC conversion requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for PSMN2R8-40YSBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
This part belongs to the NextPowerS3 Schottky-Plus MOSFET product line, engineered specifically for high-current, high-frequency power switching where low EMI, soft recovery, and 175 °C operation are mandatory.
FAQ
What is the maximum continuous drain current for PSMN2R8-40YSBX under real-world PCB conditions?
The datasheet specifies 160 A continuous drain current at Tmb = 25 °C with optimized thermal layout (copper area ≥25.4 mm², 70 µm thick FR4). In practice, achievable current depends on mounting base temperature: at Tmb = 100 °C, derated ID drops to 116 A. Thermal design must maintain Tj ≤ 175 °C using the measured Rth(j-mb) = 0.92 K/W.
Does PSMN2R8-40YSBX support standard-level gate drive, and what is its gate threshold voltage range?
Yes - it is a standard-level MOSFET with VGS(th) = 2.4–3.6 V (typ. 3.1 V) at Tj = 25 °C and ΔVGS(th)/ΔT = −6.9 mV/K. This allows direct interfacing with 5 V or 3.3 V microcontrollers without gate drivers, provided sufficient gate charge (QG(tot) = 37 nC) is delivered within required switching times.
How is the LFPAK56 package different from traditional SO-8 in terms of thermal and electrical performance?
LFPAK56 replaces bond wires with copper clips and uses solder die attach instead of epoxy, reducing Rth(j-mb) to 0.92 K/W (vs. ~2.5 K/W for SO-8) and lowering parasitic inductance by >50%. The exposed mounting base connects directly to drain and PCB copper, enabling wave soldering and eliminating thermal interface material requirements.
Is PSMN2R8-40YSBX qualified for automotive applications?
No - this device is not automotive-qualified. The datasheet explicitly states "Non-automotive qualified products" and confirms no AEC-Q101 testing or qualification. It is intended for industrial, automation, robotics, and commercial power applications where 175 °C operation and high reliability are required, but automotive-grade stress screening is not mandated.
PSMN2R8-40YSBX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4563 pF @ 20 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 147W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN2R8-40YSBX FAQ
1.How can I place an order for PSMN2R8-40YSBX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN2R8-40YSBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN2R8-40YSBX reliable?
The price and inventory of PSMN2R8-40YSBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R8-40YSBX is usually 5 days.
3.What payment methods are accepted for PSMN2R8-40YSBX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R8-40YSBX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN2R8-40YSBX?
PSMN2R8-40YSBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN2R8-40YSBX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN2R8-40YSBX?
For technical support, including PSMN2R8-40YSBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R8-40YSBX requirements.
6.How does Aetrix verify that PSMN2R8-40YSBX is sourced from the original manufacturer or authorized distributors?
All PSMN2R8-40YSBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R8-40YSBX meets industry standards.
7.What is the process for return or replacement of PSMN2R8-40YSBX?
All PSMN2R8-40YSBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R8-40YSBX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN2R8-40YSBX part is unused and in its original packaging.
Return procedure for PSMN2R8-40YSBX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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