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Nexperia USA Inc. PSMN2R8-40YSD/2X

Name: PSMN2R8-40YSD/2X
Brand: Nexperia USA Inc.
SKU: PSMN2R8-40YSD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R8-40YSD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R8-40YSD/2X.pdf

Description:: PSMN2R8-40YSD/SOT669/LFPAK

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Product details

Overview

PSMN2R8-40YSD from Nexperia is an N-channel standard-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V and 25 A, 160 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is designed for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the PSMN2R8-40YSD datasheet, PSMN2R8-40YSD pinout, PSMN2R8-40YSD application, or PSMN2R8-40YSD equivalent, key selection criteria include its 2.4–2.8 mΩ R_DS(on) at 25 °C, 147 W total power dissipation at T_mb = 25 °C, 150 A avalanche rating, 44 nC typical Q_G(tot), and LFPAK56 thermal performance with R_th(j-mb) = 0.92 K/W.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in a thermally optimized LFPAK56 package. Its Schottky-Plus body diode delivers low V_SD (0.8 V typ. at 25 A), soft reverse recovery (t_rr = 29 ns), and low Q_r (23 nC), enabling high-frequency switching without excessive EMI.

The device features strong linear-mode SOA, 100% tested unclamped avalanche capability (E_AS = 452 mJ), and robust gate drive compatibility with standard 10 V logic-level signals. Its R_DS(on) remains ≤5.4 mΩ up to T_j = 175 °C, supporting stable conduction in thermally constrained industrial and automotive-adjacent power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 12 V/24 V bus systems and 48 V intermediate bus converters.
R_DS(on)	2.4–2.8 mΩ at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.7 W conduction loss at 100 A, critical for high-current synchronous rectifiers.
I_D (cont)	160 A at T_mb = 25 °C - validated continuous current rating, limited in practice by PCB copper area and thermal interface design.
Q_G(tot)	28–62 nC (typ. 44 nC) - determines gate drive energy and switching speed; supports >500 kHz operation with moderate gate resistance.
t_rr	29 ns typical reverse recovery time - minimizes diode commutation losses and reduces voltage overshoot during hard-switching transitions.
R_th(j-mb)	0.92–1.02 K/W - enables direct mounting to heatsinks or copper planes, delivering >100 W dissipation with <100 K rise above mounting base.
V_GS(th)	2.4–3.6 V threshold voltage - ensures reliable turn-on with standard 3.3 V or 5 V logic drivers while avoiding spurious conduction.
I_AS	150 A avalanche current - 100% production-tested ruggedness for inductive load switching and fault-tolerant eFuse designs.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, single-ended power package with exposed copper mounting base connected to drain, optimized for low-inductance, high-thermal-conductivity PCB layouts. It features wave-solderable leads, visual solder-joint inspection capability, and copper-clip construction for enhanced reliability at 175 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications like motor control.
4	Gate (G)	Single gate input with 0.3–1.8 Ω internal gate resistance - compatible with standard gate drivers without external series resistance in most cases.
Mounting Base (mb)	Drain (D)	Exposed copper drain pad provides primary thermal path to PCB and electrical connection to high-side or low-side drain node.

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft reverse recovery (t_rr = 29 ns), low Q_r = 23 nC, and V_SD = 0.8 V @ 25 A - eliminates snubbers and reduces EMI in synchronous rectifier topologies.
175 °C qualified LFPAK56 package	Copper-clip die attach + solder die bond - achieves R_th(j-mb) = 0.92 K/W and passes 100% avalanche testing at elevated temperature.
Strong linear-mode SOA	Rated for 100 ms pulse operation up to 100 A at 40 V - supports robust battery protection and eFuse current limiting under fault conditions.
Low Q_GD/Q_G ratio	Q_GD = 2.1–14 nC (typ. 7 nC) vs. Q_G(tot) = 44 nC - improves Miller immunity and enables stable high-speed switching with minimal gate oscillation.
Wave-solderable leads	Leads designed for automated wave soldering with visible joint inspection - simplifies manufacturing and improves process yield in high-volume power assembly.

Applications

High-Performance Synchronous Rectification

Brushless DC Motor Control

Use Scenario: Secondary-side switch in 48 V input, 12 V output isolated DC-DC converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 2.8 mΩ R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky, while soft-body-diode recovery avoids voltage spikes during light-load discontinuous conduction mode.

Use Scenario: High-current phase-leg switch in 24–48 V BLDC inverters for industrial pumps and HVAC blowers.

IC Role / Device Role / Timing Role: N-channel power switch in 3-phase bridge driving 10–20 A RMS motor windings with PWM frequencies up to 20 kHz.

Use Value: 160 A continuous rating and 658 A peak current support enable compact inverter designs; low Q_G allows fast switching with minimal gate drive power.

Battery Protection Circuits

Load-Switch and eFuse

Use Scenario: Bidirectional overcurrent and short-circuit protection in 12 V/24 V Li-ion battery packs for portable medical devices and power tools.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair acting as solid-state fuse with fast response to overcurrent events.

Use Value: 150 A avalanche rating and strong SOA allow safe clamping of inductive kickback; low R_DS(on) minimizes voltage drop during normal operation.

Use Scenario: Hot-swap and inrush current limiting in industrial PLC I/O modules and embedded computing power rails.

IC Role / Device Role / Timing Role: Single N-channel load switch controlling 5–15 A downstream loads with controlled slew rate and fault reporting.

Use Value: Exposed drain mounting base enables direct thermal coupling to chassis; 100% tested avalanche ruggedness ensures survival during repeated short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP023N04L	Lower R_DS(on) (2.3 mΩ), higher Q_G (55 nC), TO-252 package with higher R_th(j-a).	Limited to lower-frequency switching due to slower turn-off; less suitable for >300 kHz DC-DC where PSMN2R8-40YSD's low Q_GD matters.	Prefer when board space allows DPAK and lowest possible conduction loss dominates over switching loss.
Vishay SiR626DP	Similar R_DS(on) (2.6 mΩ), higher V_GS(th) (3.0–4.0 V), PowerPAK SO-8 package with inferior thermal resistance (R_th(j-mb) ≈ 1.3 K/W).	Requires stronger gate drive for full enhancement; less robust under sustained high-temperature operation above 150 °C.	Choose only if existing layout uses PowerPAK SO-8 footprint and thermal margin exceeds 20 K.

Compared with IPP023N04L and SiR626DP, PSMN2R8-40YSD offers superior thermal performance via LFPAK56's 0.92 K/W R_th(j-mb), faster switching due to lower Q_GD/Q_G ratio, and verified soft-recovery diode behavior-making it optimal for high-frequency, high-reliability power conversion where thermal and EMI constraints are tight.

Availability

PSMN2R8-40YSD is available at Aetrix Electronics and suitable for high-current DC-DC converters, brushless DC motor drives, and battery protection circuits requiring stable component supply across extended product lifecycles.

Supply support for PSMN2R8-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in advanced power MOSFETs and ESD protection devices.

This part belongs to Nexperia's NextPower-S3 Schottky-Plus MOSFET family, engineered specifically for high-efficiency, high-frequency power switching in industrial, computing, and automotive-adjacent applications demanding ruggedness and thermal stability.

FAQ

What is the maximum continuous drain current rating for PSMN2R8-40YSD?

The datasheet specifies 160 A continuous drain current at mounting base temperature T_mb = 25 °C. This rating was demonstrated in application tests but is practically limited by PCB copper area, thermal interface quality, and ambient conditions-not by the silicon itself. At T_mb = 100 °C, the derated continuous current is 119 A.

Does PSMN2R8-40YSD have avalanche capability, and is it production-tested?

Yes-PSMN2R8-40YSD is 100% production-tested for unclamped inductive switching with I_AS = 150 A and E_AS = 452 mJ at T_j(init) = 25 °C. This ruggedness is enabled by TrenchMOS Superjunction structure and copper-clip packaging, making it suitable for inductive load switching and fault-tolerant eFuse designs.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode?

The Schottky-Plus body diode integrates a low-V_SD (0.8 V typ.), soft-recovery (t_rr = 29 ns), low-Q_r (23 nC) structure that minimizes reverse recovery losses and voltage overshoot. Unlike conventional body diodes, it avoids hard switching spikes and enables efficient synchronous rectification without snubbers-even at light loads and high frequencies.

Can PSMN2R8-40YSD be wave-soldered, and what is the recommended footprint?

Yes-the LFPAK56 package is explicitly qualified for wave soldering. Nexperia provides dedicated wave-soldering footprints (Fig. 19) with 0.6 mm lead spacing and defined solder land dimensions. The exposed leads allow visual inspection of solder joints, and the copper-clip construction ensures mechanical integrity through multiple thermal cycles.

PSMN2R8-40YSD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4507 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R8-40YSD/2X FAQ

1.How can I place an order for PSMN2R8-40YSD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R8-40YSD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R8-40YSD/2X reliable?

The price and inventory of PSMN2R8-40YSD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R8-40YSD/2X is usually 5 days.

3.What payment methods are accepted for PSMN2R8-40YSD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R8-40YSD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R8-40YSD/2X?

PSMN2R8-40YSD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R8-40YSD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R8-40YSD/2X?

For technical support, including PSMN2R8-40YSD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R8-40YSD/2X requirements.

6.How does Aetrix verify that PSMN2R8-40YSD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN2R8-40YSD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R8-40YSD/2X meets industry standards.

7.What is the process for return or replacement of PSMN2R8-40YSD/2X?

All PSMN2R8-40YSD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R8-40YSD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R8-40YSD/2X part is unused and in its original packaging.

Return procedure for PSMN2R8-40YSD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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